MT5F33743
© Fuji Electric Co., Ltd. All rights reserved.
Some examples of actual surge voltage by using 6MBI800XV-075V are explained below.
Fig. 5-2 shows an example of the collector current dependence of the surge voltage. In generally, the
larger collector current makes the larger surge voltage at the turn-off. On the other hand, the larger
collector current is produced the smaller surge voltage on reverse recovery.
Fig. 5-3 shows an example of the gate resistance dependence of the surge voltage of the reverse
recovery.
As explained above, surge voltage produced by IGBT module is not only depend on circuit
inductance but also many of operating conditions like
V
CC
and circuit parameters like gate resistance.
Therefore, when IGBT module is employed to actual equipment, it is need to confirm that surge
voltage on all of operating conditions is to be within RBSOA on actual system like invertor. If surge
voltage is excess guaranteed RBSOA, surge voltage shall be suppressed by adding snubber circuit,
by reducing stray inductance, by tuning gate resistance and so on. In addition, when surge voltage is
reduced by gate resistance, it is able to be effective operating condition to independently tune the gate
resistance of turn-on and turn-off, respectively.
5-3
Fig. 5-2 An example of collector current dependence of surge voltage
Fig. 5-3 An example of gate resistance dependence of surge voltage of reverse recovery
0
100
200
300
400
500
600
700
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
S
p
ik
e
v
o
lta
g
e
[V
]
Rg [
Ω]
150
℃
、
Vcc=400V,
Ic=800A
Vge=+15V/-0V
Cge=56nF
Ls=30nH
150
℃
,
V
CC
= 400V
I
C
= 800A
V
GE
= +15V/-0V
C
GE
= 56nF
L
S
= 30nH
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
600
700
800
S
pi
k
e
v
ol
tag
e
[V
]
Collector current [A]
VCEP
VAKP
150
℃
、
Vcc=400V,
Vge=+15V/-0V
Rgon=+2.7/-1.8Ω
Cge=56nF
Ls=30nH
150
℃
,
V
CC
= 400V
V
GE
= +15V/-0V
R
G
= +2.7/-
1.8Ω
C
GE
= 56nF
L
S
= 30nH
V
CEP
V
AKP
R
G
(Ω)
Sp
ik
e
v
o
lta
g
e
(V)
Collector current (A)
Sp
ik
e
v
o
lta
g
e
(V)
