Freescale Semiconductor *KE02 Series, Технические данные инструкция

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Table 13. Flash and EEPROM characteristics
(continued)
C Characteristic Symbol Min
1
Typical
2
Max
3
Unit
4
D Erase Flash Sector t
ERSPG
19.10 20.05 20.08 ms
D Erase EEPROM Sector t
DERSPG
4.81 5.05 20.57 ms
D Unsecure Flash t
UNSECU
96.01 100.78 101.48 ms
D Verify Backdoor Access Key t
VFYKEY
— — 464 t
cyc
D Set User Margin Level t
MLOADU
— — 407 t
cyc
C FLASH Program/erase endurance T
L
to
T
H
= -40 °C to 105 °C
n
FLPE
10 k 100 k — Cycles
C EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
n
FLPE
50 k 500 k — Cycles
C Data retention at an average junction
temperature of T
Javg
= 85°C after up to
10,000 program/erase cycles
t
D_ret
15 100 — years
1. Minimum times are based on maximum f
NVMOP
and maximum f
NVMBUS
2. Typical times are based on typical f
NVMOP
and maximum f
NVMBUS
3. Maximum times are based on typical f
NVMOP
and typical f
NVMBUS
plus aging
4. t
cyc
= 1 / f
NVMBUS
Program and erase operations do not require any special power sources other than the
normal V
DD
supply. For more detailed information about program/erase operations, see
the Flash Memory Module section in the reference manual.
6.4 Analog
6.4.1 ADC characteristics
Table 14. 5 V 12-bit ADC operating conditions
Characteri
stic
Conditions Symbol Min Typ
1
Max Unit Comment
Reference
potential
• Low
• High V
REFL
V
REFH
V
SSA
V
DDA
—
—
V
SSA
V
DDA
V —
Supply
voltage
Absolute V
DDA
2.7 — 5.5 V —
Delta to V
DD
(V
DD
-V
DDA
)
Δ
V
DDA
-100 0 +100 mV —
Ground
voltage
Delta to V
SS
(V
SS
-V
SSA
)
Δ
V
SSA
-100 0 +100 mV —
Input
voltage
V
ADIN
V
REFL
— V
REFH
V —
Input
capacitance
C
ADIN
— 4.5 5.5 pF —
Table continues on the next page...
Peripheral operating requirements and behaviors
KE02 Sub-Family Data Sheet, Rev4, 10/2014.
24 Freescale Semiconductor, Inc.