VI SDRAM CONTROLLER BLOCK: SDRAM INTERFACE
S1C33L03 FUNCTION PART
EPSON
B-VI-2-11
A-1
B-VI
SDRAM
Timing setup
The following parameters can be set in conformity with SDRAM specifications before use.
Table 2.10 SDRAM Parameters
Symbol
SDRAM parameter
Set values
(# of clocks)
Control bits
t
RC
ACTIVE to ACTIVE command period
1 to 8
SDRTRC[2:0] (D[2:0])/SDRAM
AUTO REFRESH command period
timing set-up register 1 (0x39FFC4)
Exit SELF REFRESH to ACTIVE command period
t
RAS
ACTIVE to PRECHARGE command period
1 to 8
SDRTRAS[2:0] (D[7:5])/SDRAM
Minimum SELF REFRESH period
timing set-up register 1 (0x39FFC4)
t
RCD
ACTIVE to READ or WRITE delay time
1 to 4
SDRTRCD[1:0] (D[7:6])/SDRAM
timing set-up register 2 (0x39FFC5)
t
RP
PRECHARGE command period
1 to 4
SDRTRP[1:0] (D[4:3])/SDRAM
timing set-up register 1 (0x39FFC4)
t
RRD
ACTIVE bank (a) to ACTIVE bank (b) period
1 to 4
SDRTRRD[1:0] (D[4:3])/SDRAM
timing set-up register 2 (0x39FFC5)
t
RSC
MODE REGISTER SET cycle time
1 or 2
SDRTRSC (D5)/SDRAM timing set-
up register 2 (0x39FFC5)
BCLK
Command
SDBA[1:0]
SDA[12:11, 9:0]
SDA10
DQ[15:0]
ACTV
NOP
NOP
NOP
NOP
NOP
PRE
READ
BA
BA
ROW
COL
ROW
BA
ROW
ROW
DATA DATA DATA DATA
t
RCD
t
RAS
t
RC
t
RP
CAS latency
(Burst length = 4)
NOP ACTV
BA
BKsel
BCLK
Command
SDBA[1:0]
SDA[12:11, 9:0]
SDA10
DQ[15:0]
ACTV
NOP
NOP
NOP ACTV NOP READ
READ
BAa
BAa
ROWa
COLa
BAb
ROWb
ROWa
ROWb
COLb
Da
Db
Da
+1
Da
+2
Da
+3
t
RRD
(Burst length = 4)
(a) Burst read
(b) Bank interleaved access
NOP
NOP
BAb
Figure 2.7 SDRAM Parameters
Note: When the auto-refresh command is executed, the following command may be issued 3 or 4
CPU_CLK cycles from that point regardless of the t
RC
value set in the SDRTRC[2:0]
(D[2:0])/SDRAM timing set-up register 1 (0x39FFC4). Therefore, use SDRAMs with 75 ns or less
of t
RC
.
Содержание CMOS 32-Bit Single Chip Microcomputer S1C33L03
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