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A1A-100026 Version 9, page 2
PERFORMANCE at 173 K
Electro-Optical Specification (Note 1)
Min
Typical
Max
Units
Note
Peak charge storage (image)
100k
150k
-
e
−
/pixel
2a
Peak charge storage (register)
-
600k
-
e
−
/pixel
2b
Output node capacity:
OG2 low (mode 1)
OG2 high (mode 2)
-
-
300k
1,200k
-
-
e
−
e
−
2c
Output amplifier responsivity:
OG2 low (mode 1)
OG2 high (mode 2)
3.0
-
4.5
1.5
-
µ
V/e
−
3
Read-out noise (mode 1)
-
3
4
e
−
rms
4
Maximum read-out frequency
-
1
3
MHz
5
Dark signal
Specified at 173K
[Equivalent 153K value]
-
-
6
182
[1]
e
−
/pixel/h
6
Charge transfer efficiency:
parallel
serial
99.999
99.999
99.9995
99.9998
-
-
%
%
7
NOTES
1.
Device performance will be within the limits specified by “max” and “min” when operated at the recommended voltages
supplied with the test data and when measured at a register clock frequency in the range 0.1 – 1.0 MHz. Most tests are
performed at a nominal 500 kHz pixel rate. The noise as specified is separately measured in accordance with note 4.
2.
(a) Signal level at which resolution begins to degrade.
(b) Maximum register capacity.
(c) Output node capacity under different modes.
3.
For highest responsivity and lowest nose (mode 1), the voltage on OG2 should be 1V higher than that on OG1. For
increased charge handling capacity, but with higher noise (mode 2), the voltage on OG1 should stay the same but the
voltage on OG2 should be taken to about 20V.
4.
Measured at OS with correlated double sampling at 20 kHz pixel rate in mode 1.
5.
Depending on the external load capacitance to be driven. Higher loads (> 20 pF) can benefit from use of the optional JFET
buffer. The register will transfer charge at higher frequencies, but performance cannot be guaranteed.
6.
The dark signal is typically measured at a device temperature of 173K It is a strong function of temperature and the typical
average (background) dark signal is taken as:
Q
d
/Q
do
= 122T³e
-6400 /T
where Q
do
is the dark current at 293 K.
Note that this is typical performance and some variation may be seen between devices. Dark current is lowest with the
substrate voltage at +9 V, and somewhat higher with substrate at 0 V. However, Vss=0V is now recommended for highest
spatial resolution; see note 9 later.
7.
Measured with a
55
Fe X-ray source. The CTE value is quoted for the complete clock cycle (i.e. not per phase).
