Document Number: 002-04713 Rev.*A
Page 56 of 65
MB96640 Series
14.7 Flash Memory Write/Erase Characteristics
(V
CC
= AV
CC
= 2.7V to 5.5V, V
SS
= AV
SS
= 0V, T
A
= - 40°C to + 125°C)
Parameter
Conditions
Value
Unit
Remarks
Min
Typ
Max
Sector erase time
Large Sector
T
A
≤ + 105°C
-
1.6
7.5
s
Includes write time prior to
internal erase.
Small Sector
-
-
0.4
2.1
s
Security Sector
-
-
0.31
1.65
s
Word (16-bit) write
time
Large Sector
T
A
≤ + 105°C
-
25
400
s
Not including system-level
overhead
time.
Small Sector
-
-
25
400
s
Chip erase time
T
A
≤ + 105°C
-
11.51 55.05
s
Includes write time prior to
internal erase.
Note:
While the Flash memory is written or erased, shutdown of the external power (V
CC
) is prohibited. In the application system where the
external power (V
CC
) might be shut down while writing or erasing, be sure to turn the power off by using a low voltage detection
function.
To put it concrete, change the external power in the range of change ration of power supply voltage (-0.004V/
s to +0.004V/
s) after
the external power falls below the detection voltage (V
DLX
)
*1
.
Write/Erase cycles and data hold time
Write/Erase cycles
(cycle)
Data hold time
(year)
1,000
20
*2
10,000
10
*2
100,000
5
*2
*1: See "14.6 Low Voltage Detection Function Characteristics".
*2: This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at + 85
C
).