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Document Number: 001-15271 Rev. *B

Revised March 10, 2008

Page 26 of 26

QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All product and company names mentioned in this document
are the trademarks of their respective holders.

CY7C1316JV18, CY7C1916JV18
CY7C1318JV18, CY7C1320JV18

© Cypress Semiconductor Corporation, 2007-2008. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 

Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress. 

Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges. 

Use may be limited by and subject to the applicable Cypress software license agreement. 

Document History Page

Document Title: CY7C1316JV18/CY7C1916JV18/CY7C1318JV18/CY7C1320JV18, 18-Mbit DDR-II SRAM 2-Word
Burst Architecture
Document Number: 001-15271

REV.

ECN NO.

ISSUE 

DATE

ORIG. OF 
CHANGE

DESCRIPTION OF CHANGE

**

1103944

See ECN VKN/KKVTMP New data sheet

*A

1423243

See ECN

VKN/AESA

Converted from preliminary to final
Removed 250MHz and 200MHz
Updated I

DD

/I

SB

 specs

Changed DLL minimum operating frequency from 80MHz to 120MHz
Changed t

CYC

 max spec to 8.4ns

*B

2189567

See ECN

VKN/AESA

Minor Change-Moved to the external web

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Содержание CY7C1316JV18

Страница 1: ...chronous peripheral circuitry and a one bit burst counter Addresses for read and write are latched on alternate rising edges of the input K clock Write data is registered on the rising edges of both K...

Страница 2: ...ter Read Add Decode Read Data Reg R W DQ 7 0 Output Logic Reg Reg Reg 8 8 16 8 NWS 1 0 VREF Write Add Decode 8 20 C C 8 LD Control CQ CQ R W DOFF 1M x 8 Array 1M x 8 Array 8 Write Reg Write Reg CLK A...

Страница 3: ...Q 17 0 Output Logic Reg Reg Reg 18 18 36 18 BWS 1 0 VREF Write Add Decode 18 20 C C 18 LD Control Burst Logic A0 A 19 1 CQ CQ R W DOFF 512K x 18 Array 512K x 18 Array 19 18 Write Reg Write Reg CLK A 1...

Страница 4: ...S VDDQ NC NC DQ0 M NC NC NC VSS VSS VSS VSS VSS NC NC NC N NC NC NC VSS A A A VSS NC NC NC P NC NC DQ7 A A C A A NC NC NC R TDO TCK A A A C A A A TMS TDI CY7C1916JV18 2M x 9 1 2 3 4 5 6 7 8 9 10 11 A...

Страница 5: ...C A A NC NC DQ0 R TDO TCK A A A C A A A TMS TDI CY7C1320JV18 512K x 36 1 2 3 4 5 6 7 8 9 10 11 A CQ NC 144M NC 36M R W BWS2 K BWS1 LD A NC 72M CQ B NC DQ27 DQ18 A BWS3 K BWS0 A NC NC DQ8 C NC NC DQ28...

Страница 6: ...inputs are multiplexed for both read and write operations Internally the device is organized as 2M x 8 2 arrays each of 1M x 8 for CY7C1316JV18 and 2M x 9 2 arrays each of 1M x 9 for CY7C1916JV18 1M...

Страница 7: ...Input DLL Turn Off Active LOW Connecting this pin to ground turns off the DLL inside the device The timing in the DLL turned off operation is different from that listed in this data sheet For normal o...

Страница 8: ...ock rise the data presented to D 17 0 is latched and stored into the 18 bit write data register provided BWS 1 0 are both asserted active On the subsequent rising edge of the negative input clock K th...

Страница 9: ...chips use a Delay Lock Loop DLL that is designed to function between 120 MHz and the specified maximum clock frequency During power up when the DOFF is tied HIGH the DLL is locked after 1024 cycles of...

Страница 10: ...D 8 0 is written into the device D 17 9 remains unaltered H L L H During the data portion of a write sequence CY7C1316JV18 only the upper nibble D 7 4 is written into the device D 3 0 remains unaltere...

Страница 11: ...into the device D 35 9 remains unaltered L H H H L H During the Data portion of a write sequence only the lower byte D 8 0 is written into the device D 35 9 remains unaltered H L H H L H During the Da...

Страница 12: ...lling edge of TCK Instruction Register Three bit instructions can be serially loaded into the instruction register This register is loaded when it is placed between the TDI and TDO pins as shown in TA...

Страница 13: ...n register Once the data is captured it is possible to shift out the data by putting the TAP into the Shift DR state This places the boundary scan register between the TDI and TDO pins PRELOAD places...

Страница 14: ...oller follows 9 TEST LOGIC RESET TEST LOGIC IDLE SELECT DR SCAN CAPTURE DR SHIFT DR EXIT1 DR PAUSE DR EXIT2 DR UPDATE DR 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 0 SELECT IR SCAN...

Страница 15: ...H Voltage 0 65VDD VDD 0 3 V VIL Input LOW Voltage 0 3 0 35VDD V IX Input and Output Load Current GND VI VDD 5 5 A 0 0 1 2 29 30 31 Boundary Scan Register Identification Register 0 1 2 106 0 1 2 Instru...

Страница 16: ...H TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns Output Times tTDOV TCK Clock LOW to TDO Valid 10 ns tTDOX TCK Clock LOW to TDO Invalid 0 ns TAP Timing and Test Conditions Figur...

Страница 17: ...uction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO Th...

Страница 18: ...0 3L 7 8P 35 10E 63 1H 91 1M 8 9R 36 10D 64 1A 92 1L 9 11P 37 9E 65 2B 93 3N 10 10P 38 10C 66 3B 94 3M 11 10N 39 11D 67 1C 95 1N 12 9P 40 9C 68 1B 96 2M 13 10M 41 9D 69 3D 97 3P 14 11N 42 11B 70 3C 98...

Страница 19: ...are stable take DOFF HIGH The additional 1024 cycles of clocks are required for the DLL to lock DLL Constraints DLL uses K clock as its synchronizing input The input must have low phase jitter which i...

Страница 20: ...ote 17 VDDQ 2 0 12 VDDQ 2 0 12 V VOH LOW Output HIGH Voltage IOH 0 1 mA Nominal Impedance VDDQ 0 2 VDDQ V VOL LOW Output LOW Voltage IOL 0 1 mA Nominal Impedance VSS 0 2 V VIH Input HIGH Voltage VREF...

Страница 21: ...Junction to Ambient Test conditions follow standard test methods and procedures for measuring thermal impedance in accordance with EIA JESD51 28 51 C W JC Thermal Resistance Junction to Case 5 91 C W...

Страница 22: ...45 ns tDOH tCHQX Data Output Hold after Output C C Clock Rise Active to Active 0 45 ns tCCQO tCHCQV C C Clock Rise to Echo Clock Valid 0 45 ns tCQOH tCHCQX Echo Clock Hold after C C Clock Rise 0 45 ns...

Страница 23: ...tKL tCYC A0 D20 D21 D30 D31 Q00 Q11 Q01 Q10 A1 A2 A3 A4 Q41 tCCQO tCQOH tCCQO tCQOH tKL tCYC K K LD R W A DQ C C CQ CQ SA tKH tKHKH tCQD tCQDOH tCQH tCQHCQH Notes 24 Q00 refers to output from address...

Страница 24: ...Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm Commercial CY7C1916JV18 300BZC CY7C1318JV18 300BZC CY7C1320JV18 300BZC CY7C1316JV18 300BZXC 51 85180 165 Ball Fine Pitch Ball Grid Array 13 x 15 x 1 4 mm P...

Страница 25: ...0 05 M C B A 0 15 4X 0 35 0 06 SEATING PLANE 0 53 0 05 0 25 C 0 15 C PIN 1 CORNER TOP VIEW BOTTOM VIEW 2 3 4 5 6 7 8 9 10 10 00 14 00 B C D E F G H J K L M N 11 11 10 9 8 6 7 5 4 3 2 1 P R P R K M N L...

Страница 26: ...urce Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress integrated circuit as speci...

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