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CY7C1298H

Document #: 38-05665 Rev. *B

Page 4 of 16

Pin Descriptions 

Pin

Type

Description

A0, A

1

, A

Input-

Synchronous

Address Inputs used to select one of the 64K address locations

. Sampled at the rising edge 

of the CLK if ADSP or ADSC is active LOW, and CE

1

,

 

CE

2

, and

 

CE

are sampled active. A

[1:0]

 are 

fed to the two-bit counter.

BW

[A:B]

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to conduct byte writes to the SRAM. 

Sampled on the rising edge of CLK.

GW

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on the rising edge of CLK, a global 

write is conducted (ALL bytes are written, regardless of the values on BW

[A:B]

 and BWE).

BWE

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge of CLK. This signal must be 

asserted LOW to conduct a byte write.

CLK

Input-
Clock

Clock Input

. Used to capture all synchronous inputs to the device. Also used to increment the burst 

counter when ADV is asserted LOW, during a burst operation.

CE

1

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

2

 and CE

3

 to select/deselect the device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled only 

when a new external address is loaded.

CE

2

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

1

 and CE

3

 to select/deselect the device. CE

is sampled only when a new external address is 

loaded.

CE

3

Input-

Synchronous

Chip Enable 3 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

and

 

CE

2

 to select/deselect the device. CE

3

 is sampled only when a new external address is 

loaded.

OE

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the direction of the I/O pins. When 

LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as 
input data pins. OE is masked during the first clock of a read cycle when emerging from a deselected 
state. 

ADV

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK, active LOW

. When asserted, it 

automatically increments the address in a burst cycle.

ADSP

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers. A

[1:0]

 are 

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-
nized. ASDP is ignored when CE

1

 is deasserted HIGH.

ADSC

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, addresses presented to the device are captured in the address registers. A

[1:0]

 are 

also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog-
nized.

ZZ

Input-

Asynchronous

ZZ “sleep” Input, active HIGH

. When asserted HIGH places the device in a non-time-critical 

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left 
floating. The ZZ pin has an internal pull-down.

DQs
DQP

[A:B]

I/O-

Synchronous

Bidirectional Data I/O lines

. As inputs, they feed into an on-chip data register that is triggered by 

the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified 
by the addresses presented during the previous clock rise of the read cycle. The direction of the 
pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs 
and DQP

[A:B]

 are placed in a tri-state condition.

V

DD

Power Supply

Power supply inputs to the core of the device

V

SS

Ground

Ground for the core of the device

V

DDQ

I/O Power 

Supply

Power supply for the I/O circuitry

V

SSQ

I/O Ground

Ground for the I/O circuitry

MODE

Input-

Static

Selects Burst Order

. When tied to GND selects linear burst sequence. When tied to V

DD

 or left 

floating selects interleaved burst sequence. This is a strap pin and should remain static during 
device operation. Mode Pin has an internal pull-up.

NC

No Connects

. Not internally connected to the die. 2M, 4M, 9M, 18M, 72M, 144M, 288M, 576M and 

1G are address expansion pins and are not internally connected to the die.

[+] Feedback 

Содержание CY7C1298H

Страница 1: ...rst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC are active Subsequent burst addresses can be internally generated as controlled by the Advance pin ADV Addre...

Страница 2: ...R Q1 Q0 ADSC BWB BWA CE1 DQB DQPB BYTE WRITEREGISTER DQA DQPA BYTE WRITEREGISTER ENABLE REGISTER OE SENSE AMPS MEMORY ARRAY ADSP 2 A 1 0 MODE CE2 CE3 GW BWE PIPELINED ENABLE DQs DQPA DQPB OUTPUT REGISTERS INPUT REGISTERS E OUTPUT BUFFERS DQB DQPB BYTE WRITEDRIVER DQA DQPA BYTE WRITEDRIVER SLEEP CONTROL ZZ A0 A1 A Feedback ...

Страница 3: ...QPB NC VSSQ VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSC ADSP ADV A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 CY7C1...

Страница 4: ... state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW When asserted it automatically increments the address in a burst cycle ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW addresses presented to the device are captured in the address registers A 1 0 are also loaded into the burst counter W...

Страница 5: ...e the data presented to the DQx inputs is written into the corre sponding address location in the memory core If GW is HIGH then the write operation is controlled by BWE and BW A B signals The CY7C1298H provides byte write capability that is described in the Write Cycle Description table Asserting the Byte Write Enable input BWE with the selected Byte Write input will selectively write to only the...

Страница 6: ...st Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X L X H L L X L H D Read Cycle Suspend Burst Current X X X L H H H H L L H Q Read Cycle Suspend Burst Current X X X L H H H H H L H Tri State Read Cycle Suspend Burst Current H X X L X H H H L L H Q Read Cycle Sus...

Страница 7: ...tes H L L L Write all bytes L X X X ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep mode standby current ZZ VDD 0 2V 40 mA tZZS Device operation to ZZ ZZ VDD 0 2V 2tCYC ns tZZREC ZZ recovery time ZZ 0 2V 2tCYC ns tZZI ZZ Active to Sleep current This parameter is sampled 2tCYC ns tRZZI ZZ inactive to exit Sleep current This parameter is sampled 0 ns...

Страница 8: ...or 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 µA Input Current of MODE Input VSS 30 µA Input VDD 5 µA Input Current of ZZ Input VSS 5 µA Input VDD 30 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply Current VDD Max IOUT ...

Страница 9: ...follow standard test methodsandproceduresformeasuring thermal impedance per EIA JESD51 30 32 C W ΘJC Thermal Resistance Junction to case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially and after any design or process change that may affect these parameters OUTPUT R 317Ω R 351Ω 5 pF INCLUDING JIG AND SCOPE a b OUTPUT RL 50Ω Z0 50Ω VT 1 5V 3 3V ALL INPUT PULSES VDDQ GND 90 10 90 10 1 ns...

Страница 10: ...ise 0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 5 0 5 ns tWEH GW BWE BW A B Hold After CLK Rise 0 5 0 5 ns tDH Data Input Hold After CLK Rise 0 5 0 5 ns tCEH Chip Enable Hold After CLK Rise 0 5 0 5 ns Notes 10 This part has a voltage regulator internally tpower is the time that the power needs to be supplied above VDD minimum initially before a read or ...

Страница 11: ...3 is HIGH tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW Data Out Q High Z tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial state tADVH tADVS tWEH tWES tADH tADS Q A2 Q A2 1 Q A2 2 Q A1 Q A2 Q A2 1 Q A3 Q A2 3 A2 A3 Deselect cycle Burst continued with new base address ADV suspends burst DON T CARE UNDEFINED A B CLZ t...

Страница 12: ...S ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A B ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH tWES t DH t DS GW tWEH tWES Byte write signals are ignored for first cycle when ADSP initiates burst ADSC extends burst ADV suspends burst DON T CARE UNDEFINED D A1 High Z Data in ...

Страница 13: ...y ADSP or ADSP 19 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6 Data In D BURST READ Back to Back READs High Z Q A2 Q A1 Q A4 Q A4 1 Q A4 2 tWEH tWES Q A4 3 tOEHZ tDH tDS tOELZ tCLZ tCO Back to Back WRITEs A1 BWE BW A B A3 DON T CARE UNDEFINED Feedback ...

Страница 14: ...ed when entering ZZ mode See truth table for all possible signal conditions to deselect the device 21 I Os are in High Z when exiting ZZ sleep mode Switching Waveforms continued tZZ I SUPPLY CLK ZZ tZZREC ALL INPUTS except ZZ DON T CARE I DDZZ tZZI tRZZI Outputs Q High Z DESELECT or READ Only Feedback ...

Страница 15: ...gistered trademark of IBM All product and company names mentioned in this document are the trademarks of their respective holders Ordering Information Not all of the speed package and temperature ranges are available Please contact your local sales representative or visit www cypress com for actual products offered Speed MHz Ordering Code Package Diagram Package Type Operating Range 100 CY7C1298H ...

Страница 16: ...Corporation on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Input Leakage Current except ZZ and MODE in the Electrical Characteristics Table Modified test condition from VIH VDD to VIH VDD Replaced Package Name column with Package Diagram in the Ordering Infor...

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