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CY7C1298H

Document #: 38-05665 Rev. *B

Page 5 of 16

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. All data outputs pass through
output registers controlled by the rising edge of the clock. 

The CY7C1298H  supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486‰
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is user
selectable, and is determined by sampling the MODE input.
Accesses can be initiated with either the Processor Address
Strobe (ADSP) or the Controller Address Strobe (ADSC).
Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.

Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW

[A:B]

) inputs. A Global Write

Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.

Synchronous Chip Selects CE

1

, CE

2

, CE

3

 and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE

1

is HIGH.

Single Read Accesses

This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
chip selects are all asserted active, and (3) the write signals
(GW, BWE) are all deasserted HIGH. ADSP is ignored if CE

1

is HIGH. The address presented to the address inputs is
stored into the address advancement logic and the Address
Register while being presented to the memory core. The corre-
sponding data is allowed to propagate to the input of the
Output Registers. At the rising edge of the next clock the data
is allowed to propagate through the output register and onto
the data bus within t

co

 if OE is active LOW. The only exception

occurs when the SRAM is emerging from a deselected state
to a selected state, its outputs are always tri-stated during the
first cycle of the access. After the first cycle of the access, the
outputs are controlled by the OE signal. Consecutive single
read cycles are supported. 

The CY7C1298H is a double-cycle deselect part. Once the
SRAM is deselected at clock rise by the chip select and either
ADSP or ADSC signals, its output will tri-state immediately
after the next clock rise.

Single Write Accesses Initiated by ADSP

This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) chip select is asserted active. The address presented is
loaded into the address register and the address
advancement logic while being delivered to the memory core.
The write signals (GW, BWE, and BW

[A:B]

) and ADV inputs are

ignored during this first cycle. 

ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQx inputs is written into the corre-
sponding address location in the memory core. If GW is HIGH,
then the write operation is controlled by BWE and BW

[A:B]

signals. The CY7C1298H  provides byte write capability that
is described in the Write Cycle Description table. Asserting the
Byte Write Enable input (BWE) with the selected Byte Write
input will selectively write to only the desired bytes. Bytes not
selected during a byte write operation will remain unaltered. A
synchronous self-timed write mechanism has been provided
to simplify the write operations. 

Because the CY7C1298H is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQ

 

inputs. Doing so will tri-state the output drivers. As

a safety precaution, DQ are automatically tri-stated whenever
a write cycle is detected, regardless of the state of OE.

Single Write Accesses Initiated by ADSC

ADSC write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) chip select is asserted active, and (4)
the appropriate combination of the write inputs (GW, BWE,
and BW

[A:B]

) are asserted active to conduct a write to the

desired byte(s). ADSC triggered write accesses require a
single clock cycle to complete. The address presented is
loaded into the address register and the address
advancement logic while being delivered to the memory core.
The ADV input is ignored during this cycle. If a global write is
conducted, the data presented to the DQ

X

 is written into the

corresponding address location in the memory core. If a byte
write is conducted, only the selected bytes are written. Bytes
not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations. 

Because the CY7C1298H is a common I/O device, the Output
Enable (OE) must be deasserted HIGH before presenting data
to the DQ

X

 inputs. Doing so will tri-state the output drivers. As

a safety precaution, DQ

X

 are automatically tri-stated

whenever a write cycle is detected, regardless of the state of
OE.

Burst Sequences

The CY7C1298H  provides a two-bit wraparound counter, fed
by A

[1:0]

, that implements either an interleaved or linear burst

sequence. The interleaved burst sequence is designed specif-
ically to support Intel Pentium applications. The linear burst
sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input. Both read and write burst operations
are supported

Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CEs, ADSP, and ADSC must remain
inactive for the duration of t

ZZREC

 after the ZZ input returns

LOW.

[+] Feedback 

Содержание CY7C1298H

Страница 1: ...rst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC are active Subsequent burst addresses can be internally generated as controlled by the Advance pin ADV Addre...

Страница 2: ...R Q1 Q0 ADSC BWB BWA CE1 DQB DQPB BYTE WRITEREGISTER DQA DQPA BYTE WRITEREGISTER ENABLE REGISTER OE SENSE AMPS MEMORY ARRAY ADSP 2 A 1 0 MODE CE2 CE3 GW BWE PIPELINED ENABLE DQs DQPA DQPB OUTPUT REGISTERS INPUT REGISTERS E OUTPUT BUFFERS DQB DQPB BYTE WRITEDRIVER DQA DQPA BYTE WRITEDRIVER SLEEP CONTROL ZZ A0 A1 A Feedback ...

Страница 3: ...QPB NC VSSQ VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSC ADSP ADV A A 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 CY7C1...

Страница 4: ... state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW When asserted it automatically increments the address in a burst cycle ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW addresses presented to the device are captured in the address registers A 1 0 are also loaded into the burst counter W...

Страница 5: ...e the data presented to the DQx inputs is written into the corre sponding address location in the memory core If GW is HIGH then the write operation is controlled by BWE and BW A B signals The CY7C1298H provides byte write capability that is described in the Write Cycle Description table Asserting the Byte Write Enable input BWE with the selected Byte Write input will selectively write to only the...

Страница 6: ...st Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X L X H L L X L H D Read Cycle Suspend Burst Current X X X L H H H H L L H Q Read Cycle Suspend Burst Current X X X L H H H H H L H Tri State Read Cycle Suspend Burst Current H X X L X H H H L L H Q Read Cycle Sus...

Страница 7: ...tes H L L L Write all bytes L X X X ZZ Mode Electrical Characteristics Parameter Description Test Conditions Min Max Unit IDDZZ Sleep mode standby current ZZ VDD 0 2V 40 mA tZZS Device operation to ZZ ZZ VDD 0 2V 2tCYC ns tZZREC ZZ recovery time ZZ 0 2V 2tCYC ns tZZI ZZ Active to Sleep current This parameter is sampled 2tCYC ns tRZZI ZZ inactive to exit Sleep current This parameter is sampled 0 ns...

Страница 8: ...or 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 µA Input Current of MODE Input VSS 30 µA Input VDD 5 µA Input Current of ZZ Input VSS 5 µA Input VDD 30 µA IOZ Output Leakage Current GND VI VDDQ Output Disabled 5 5 µA IDD VDD Operating Supply Current VDD Max IOUT ...

Страница 9: ...follow standard test methodsandproceduresformeasuring thermal impedance per EIA JESD51 30 32 C W ΘJC Thermal Resistance Junction to case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially and after any design or process change that may affect these parameters OUTPUT R 317Ω R 351Ω 5 pF INCLUDING JIG AND SCOPE a b OUTPUT RL 50Ω Z0 50Ω VT 1 5V 3 3V ALL INPUT PULSES VDDQ GND 90 10 90 10 1 ns...

Страница 10: ...ise 0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 5 0 5 ns tWEH GW BWE BW A B Hold After CLK Rise 0 5 0 5 ns tDH Data Input Hold After CLK Rise 0 5 0 5 ns tCEH Chip Enable Hold After CLK Rise 0 5 0 5 ns Notes 10 This part has a voltage regulator internally tpower is the time that the power needs to be supplied above VDD minimum initially before a read or ...

Страница 11: ...3 is HIGH tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW Data Out Q High Z tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial state tADVH tADVS tWEH tWES tADH tADS Q A2 Q A2 1 Q A2 2 Q A1 Q A2 Q A2 1 Q A3 Q A2 3 A2 A3 Deselect cycle Burst continued with new base address ADV suspends burst DON T CARE UNDEFINED A B CLZ t...

Страница 12: ...S ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A B ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH tWES t DH t DS GW tWEH tWES Byte write signals are ignored for first cycle when ADSP initiates burst ADSC extends burst ADV suspends burst DON T CARE UNDEFINED D A1 High Z Data in ...

Страница 13: ...y ADSP or ADSP 19 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6 Data In D BURST READ Back to Back READs High Z Q A2 Q A1 Q A4 Q A4 1 Q A4 2 tWEH tWES Q A4 3 tOEHZ tDH tDS tOELZ tCLZ tCO Back to Back WRITEs A1 BWE BW A B A3 DON T CARE UNDEFINED Feedback ...

Страница 14: ...ed when entering ZZ mode See truth table for all possible signal conditions to deselect the device 21 I Os are in High Z when exiting ZZ sleep mode Switching Waveforms continued tZZ I SUPPLY CLK ZZ tZZREC ALL INPUTS except ZZ DON T CARE I DDZZ tZZI tRZZI Outputs Q High Z DESELECT or READ Only Feedback ...

Страница 15: ...gistered trademark of IBM All product and company names mentioned in this document are the trademarks of their respective holders Ordering Information Not all of the speed package and temperature ranges are available Please contact your local sales representative or visit www cypress com for actual products offered Speed MHz Ordering Code Package Diagram Package Type Operating Range 100 CY7C1298H ...

Страница 16: ...Corporation on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Input Leakage Current except ZZ and MODE in the Electrical Characteristics Table Modified test condition from VIH VDD to VIH VDD Replaced Package Name column with Package Diagram in the Ordering Infor...

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