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34 

WARRANTY  SERVICE  INSTRUCTIONS 

1. Refer to the maintenance section of  the  instruction manual for adjust­

ments that  may  be  applicable.

2. Check common electronic parts such as tubes, transistors and batteries.

Always check  instruction manual for applicable adjustments after such
replacement.

3. Defective  parts  removed  from  units  which  are  within  the  warranty

period  should  be  sent  to  the  factory  prepaid  with  model  and  serial
number of product from which  removed  and  date of  product purchase.

These parts will be exchanged at  no  charge.

4. If  the  above  mentioned  procedures  do  not  correct  the  difficulty,  pack

the product  securely  (preferably  in original carton  or double  packed).

A detailed list of troubles encountered must be enclosed as well as  your
name and  address.  Forward  prepaid  (express preferred)  to the  nearest

B & K  authorized  service agency.

Contact  your  local  B & K  Distributor  for  the  name  and  location  of  your 
nearest service  agency,  or write to 

Service Department 

B&K  DIVISION  OF  DYNASCAN  CORPORATION 

2815  Irving  Park  Road 

Chicago,  Illinois  60618 

WARRANTY 

··a  &  K  warrants  tbal  each  product  manulactured  by  it  wiU  be  free  from  defects  in  material  and 
workmanship  under  normal  usage  and  service  for  a  period  of  ninety  days  after  its  purchase  new 
from  an  authorl:r.ed B  &  K  distributor.  Our  obligation  under  this  warranty  is  limited  to  repairing, 
or  replacing  any  product  or  component  which  we  are  satisfied  does  not  conform  with  the  fore­

going  warranty  and  which  is  returned  to  our  factory  or  our  authorized  service  contractor,  transpor· 
talion  prepaid,  and  we  shall  not  otherwise  be  liable  for  any  damages,  coosequential  or  otherwise. 

The  foregoing  warranty 

i1 

exclusive  and  in  lieu  of  all  other  warranties  (including  any  warranty  of 

merchantability),  whether expressed  or implied. 

Such warranty  shall  not  apply  to  any  product  or

component  (i)  repaired  or  altered  by  anyone  other  than  B  &  K 

or 

its  authorized  service  contractor 

(except  normal  tube  replacement)  without  B  &  K·s  prior  written  approval;  (ii)  tampered  with 

or 

altered  in  any way  or  subjected  to  misuse,  negligence  or  accident;  (iii)  which  has  the  serial  number 
altered,  defaced  or  removed;  or  (iv)  which  bas  been  improperly  connected,  installed  or  adjusted 
otbcrwise  than  in  accordance  with  B  &  K's  instructions.  B  &  K  reserves  lbe  right  to  discontinue 

any  model  at  any  time  or  change  speci6calions  or  design  without  notice  and  without  incurring  any 
obligalion. 

The  warranty  •hall  be  void  and  there  shall  be  no  warranty  of  any  product  or  com• 

ponent 

if 

a  B 

K  warranty  regi,tration  card 

is 

not  properly  completed  and  postmarked  to  the 

K  factory  within  five  day,  after  the  purcluue  of  th,:  product  new  from  an  authorized 

K  di•tributor." 

480·t30·9-001 

Содержание 501A

Страница 1: ...Model 501A Semiconductor Curve Tracer...

Страница 2: ...ave helped provide better and faster service techniques Close contact has been maintained with the manufacturers of consumer products which our test units will be checking and trouble shooting Key per...

Страница 3: ...INSTRUCTION MANUAL FOR B K PRECISION MODEL 501A SEMICONDUCTOR CURVE TRACER 8 K DIVISION OF DYNASCAN CORPORATION 1801 W Belle Plaine Avenue Chicago Illinois 60613 Copyright 1972...

Страница 4: ...PPLICATIONS 14 Testing Bipolar Transistors 14 NPN vs PNP Transistors 14 CURRENT GAIN MEASUREMENT 14 DC Current Gain DC beta 15 AC Current Gain AC beta 15 Summary of Transistor Current Gain 16 Current...

Страница 5: ...4 IC 5 6 7 8 Q 1 Q 2 3 Q 4 Q 5 6 11 12 Q 8 9 10 SW 2 SW 3 SW 4 SW 5 11 72 488 113 9 002 8 DESCRIPTION CAPACITORS B K PART No 1000 fd 35 Volt Electrolytic Capacitor 022 001 9 015 100 fd 25 Volt Electro...

Страница 6: ...SJ TEP l OLA l lIt S lfilJC T TO f W f 0 1T N SOC tt SCLtCTOR SET TO lh Hr l OSIHO t I VUtf J 1 S NSITl TV SW l N l TO jl l Ai IV u 01 i t S1 l I IO i G l l G iT SO J tl T Rw t C t I 1 Ill 1S 1 IW 1 4...

Страница 7: ...er general purpose oscilloscope is satisfactory as long as it has external horizontal facilities and is DC coupled The B K Models 1440 1460 and 1465 Oscilloscopes are ideal companions for the Model SO...

Страница 8: ...7 8 17 16 15 14 13 12 II 10 9 18 0 0 Figure 1 Controls and Operator s Facilities 2...

Страница 9: ...rts base to emit ter terminal for measuring collector emitter leakage cur rent with O Volt base bias Selects the gate voltage step value for testing FET s The unit automatically generates gate voltage...

Страница 10: ...sitions of the STEP SELECTOR switch constant voltage steps are generated for testing FET s Five selections from 05 to 1 volt per step are offered The polarity of the voltage steps is inverted in relat...

Страница 11: ...rent thru the semiconductor being tested and the hori zontal divisions must accurately represent the sweep voltage applied to the semiconductor being tested that is the oscilloscope must be calibrated...

Страница 12: ...of reading the horizontal voltage is available by connecting the sweep voltage output of the curve tracer H jack to the horizontal input of the oscillo scope This method will produce a horizontal trac...

Страница 13: ...Ground the vertical input if desired Adjust HORIZONTAL GAIN so 4 Connect a test lead from the H jack of the curve tracer to the horizontal input of the oscilloscope 5 Set the SWEEP VOLTAGE control to...

Страница 14: ...aneously switched from one semiconductor to the other The SOCKET switch may also be used to start and stop the test of the semiconductor merely activate the empty socket to stop the test This allows c...

Страница 15: ...ied for testing zener diodes leakage of signal and rectifier diodes and inverse peak breakdown voltage Forward bias characteristics show voltage drop across the diode junction and resistive or open co...

Страница 16: ...t r 3 2ti l p pr t r 1 l 0 2 3 6 7 8 9 10 ADJUST OSCIL LOSCOPE CENTERING CONTROLS TO PLACE START OF ZERO REFERENCE STEP HERE NPN transistors the display should be posi tioned so the curves start at th...

Страница 17: ...f the display Increasing the setting widens the display and may cause the display to go off scale Decrease and increase the setting of the control and note the effect upon the display If increasing th...

Страница 18: ...s displayed on the VERTICAL SENSITIVITY range being used If the setting is too high some of the curves may reach the current limiting value and be superim posed on each other causing less than five cu...

Страница 19: ...ideal for making contact to transistors mounted on P C Boards Refer to the In circuit Probe section for more information When performing in circuit tests use the fast set up markers on the 501 front...

Страница 20: ...turn the VERTICAL SENSITIVITY to the 1 mA Div position after each test so that the next test begins with full protection NPN vs PNP Transistors As described previously in the Typical Test section the...

Страница 21: ...ent point Simply approx imate the percentage of distance between the curves above and below the poin use it as a percentage of one step to obtain total base current when added to the number of current...

Страница 22: ...to gether at higher collector current Each base current step has precisely the same amount of increase which should cause the collector current curves to be separated by equal amounts if the gain wer...

Страница 23: ...d does not introduce distortion If 6 10 s are imbalanced distortion will be intro duced due to this non linearity The greater the im balance the greater the distortion The distortion measurement can b...

Страница 24: ...would be destroyed by the test Figure 21 shows a typical family of curves with the sweep voltage set high to cause collector break down In the examples shown in the figure break down occurs at a coll...

Страница 25: ...t portion of the family of curves in the area of low collector voltage and current below the knee of each curve Notice that the knee of each curve occurs at approximately the same collector voltage re...

Страница 26: ...tance The transistor s output impedance or collector resistance is the reciprocal of its output admittance and is measured in ohms It may be calculated by transposing the current and voltage values us...

Страница 27: ...collector voltage at various base currents FET curves are a graph of drain current vs drain voltage at various gate voltages FET breakdown voltage may be observed and measured by the same method used...

Страница 28: ...e MOS FET s can be damaged by a voltage transient from a static charge carried by the person handling the device Safeguard against such damage and discharge any static charge by touching ground with o...

Страница 29: ...ty may be determined by the same method as desribed for transistors if the spacing between curves is equal the FET is linear Pinch Off Vp Voltage Measurement An important characteristic for depletion...

Страница 30: ...scale GERMANIUM SILICON 1 100 80 Io ma 0 5 1 1 5 VF volts FORWARD BIAS 2 2 5 When testing diodes only one curve is displayed not a family of curves as displayed for transistors and FET s The forward b...

Страница 31: ...OLT j _ _ 2 I I I ZENER I i 1 1 filgl i I i l j i I I I H i_ i t lJ__tH 10 a 6 VR 4 2 o SHARP ZENER KNEE To obtain the most accurate voltage reading pos sible calibrate the full scale oscilloscope hor...

Страница 32: ...y The curves C E appear quite close together and careful observation may be required to distinguish the individual curves It may be helpful to spread out the display by in creasing the horizontal sens...

Страница 33: ...e Any anode current at anode voltage below the firing point is forward leakage current and can be read directly from the display Reverse Blocking Voltage Reverse blocking voltage is the maximum revers...

Страница 34: ...age and increase the de bias supply until the SCR switches on Measure the value of gate voltage at which switching occurred 2 Set the de bias supply to a specified gate volt age and increase the sweep...

Страница 35: ...I I 1 Vp t I I I I 10 I 1 i I i 1 L 1 1 I 1 I 5 I i I 1 5 J MA I I l l Ip peak current start of tunnel region Iv valley current end of tunnel region Vp peak voltage start of tunnel region Vv valley v...

Страница 36: ...y soldered wires short TP30 TP31 and TP32 to the S Volt line on the PC board 4 Attach a digital voltmeter to TP29 and turn on AC power to the unit 5 Adjust the CALIBRATE pot R36 for a reading of 3 50...

Страница 37: ...board It is most important to follow the explicit control setting and set up pro cedure as given in the notes column in order to obtain the illustrated waveforms Point by point sig nal tracing with a...

Страница 38: ...VAC 50 IOkl l IG H VOLTAGE ECONO Ut f aiJitllttN1 u nsim R Sl l0ll S 6 SEL CTOR to a countdown chain composed of 3 flip flops within two IC packages IC3 and 4 The second flip flop of IC4 is not used...

Страница 39: ...through the SOCKET SELEC TOR to the desired test socket RIGHT or LEFT The higher voltage secondary of the power trans former is full wave rectified by a diode bridge DI through D4 to produce a 120Hz s...

Страница 40: ...se new from an authorl r ed B K distributor Our obligation under this warranty is limited to repairing or replacing any product or component which we are satisfied does not conform with the fore going...

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