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TESTING  SILICON  CONTROLLED  RECTIFIERS  (SCR's) 

SCR's (also called thyristors) are four l

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er p-n-p-n 

semiconductors with three terminals; cathode, anode 

and  gate.  During conduction, the  SCR has the  char­

acteristics of  two series diodes.  However, the device 

is  normally  nonconductive  until  a  trigger  current  is 

applied  to its  gate.  Once  triggered  into  conduction, 

the SCR cannot be turned off until the anode-cathode 

current  drops  below  a  holding  current  value  neces­

sary  to  sustain  conduction.  This  holding  current  is 

usually a small percentage  of the permissable  peak 

current. 

The  following  characteristics  of  an  SCR  can  be 

displayed  and  measured  with  the  semiconductor 

curve tracer: 

Forward Blocking Voltage 

Reverse Blocking Voltage 

Leakage Current 

Holding Current 

Forward Voltage Drop for Various Forward 

Current 

Gate Trigger Voltage for Various Forward 

Voltages 

SCR Connections to Curve Tracer  (Figure 33) 

For  all  measurements  except  gate  trigger  voltage 

the  SCR should be  connected to  the  curve  tracer  as 

follows: 

CATHODE to EMITTER jack or emitter pin of 

socket 

ANODE to COLLECTOR jack or collector pin of 

socket 

GATE to BASE jack or base pin of socket 

Forward Blocking Voltage  (Figure 34) 

Forward  blocking  voltage is the maximum anode­

cathode  voltage  in  the  forward  direction  that  the 

device will withstand before conduction, at zero gate 

current.  The  curve  tracer  will  measure  forward 

blocking voltage up to  100 volts. 

To  measure  forward  blocking  voltage,  set  the 

STEP SELECTOR to the IcES  position.  This shorts the 

gate  and  cathode  to satisfy the  zero  gate  current  re­

quirement.  Set  the  POLARITY  switch  to  NPN.  In­

crease  the  SWEEP  VOLTAGE  until  the  SCR  "fires", 

that is, the anode current suddenly increases and the 

anode  voltage drops  to  near  zero.  Read  the highest 

anode voltage point in the  display.  This is  the max­

imum forward blocking voltage.  Any anode current 

at  anode voltage  below  the  "firing" point is forward 

leakage  current.  and  can  be  read  directly  from  the 

display. 

Reverse Blocking Voltage 

Reverse blocking voltage is the maximum  reverse 

anode-cathode  voltage  at  zero  gate  current  that  the 

device  can withstand before  voltage breakdown.  It 

is  similar  to  the  peak  inverse  voltage  of  a  diode. 

Reverse  blocking  voltage  is  normally  higher  than 

forward  blocking  voltage.  The  Model  501A  can 

measure reverse blocking voltage up to 100 volts. 

The  procedure  for  measuring  reverse  blocking 

voltage is the  same as for measuring forward block­

ing  voltage  except  that  the  POLARITY  switch is set 

to  PNP.  The  voltage  at  which  voltage  breakdown 

occurs, which is a sudden increase in anode current, 

is  the  reverse  blocking  voltage  value.  Any  anode 

current  at  voltages  below  breakdown  is  reverse 

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Figure 33.  SCR Connections to Curve Tracer 

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20 

40 

60 

80 

100 

VF 

Figure 34.  Testing Forward Blocking Voltage and 

Holding Current of SCR's 

leakage  current.  and  can  be  read  directly  from the 

displ

ay

Holding Current 

Holding current is  the minimum anode current re­

quired to sustain conduction once the  SCR has been 

fired.  With  the  same procedure as used  for  the for­

ward  blocking  voltage  test,  note  the  lowest  current 

displayed for the "on" condition.  This is the holding 

current.  The measurement  may  also be made  with 

the STEP SELECTOR in one of the "Current per Step" 

positions  so  that  less  sweep  voltage  is  required  to 

place the SCR in the "on" condition. 

Forward Voltage Drop 

The  forward  voltage drop  during  the  "on"  condi­

tion  at  various forward current levels may be meas­

ured  by  increasing  the  horizonal  sensitivity  of  the 

oscilloscope  and  displ

ay

ing  a  low  voltage  portion 

of  the  forward  voltage.  Increase  the  STEP  SELEC 

TOR  "Current  per  Step"  setting  so  that  sweep  volt­

age m

ay 

be  reduced.  The  VERTICAL  SENSITIVITY 

may be reduced to  10 mA per division for  a  greater 

27 

Содержание 501A

Страница 1: ...Model 501A Semiconductor Curve Tracer...

Страница 2: ...ave helped provide better and faster service techniques Close contact has been maintained with the manufacturers of consumer products which our test units will be checking and trouble shooting Key per...

Страница 3: ...INSTRUCTION MANUAL FOR B K PRECISION MODEL 501A SEMICONDUCTOR CURVE TRACER 8 K DIVISION OF DYNASCAN CORPORATION 1801 W Belle Plaine Avenue Chicago Illinois 60613 Copyright 1972...

Страница 4: ...PPLICATIONS 14 Testing Bipolar Transistors 14 NPN vs PNP Transistors 14 CURRENT GAIN MEASUREMENT 14 DC Current Gain DC beta 15 AC Current Gain AC beta 15 Summary of Transistor Current Gain 16 Current...

Страница 5: ...4 IC 5 6 7 8 Q 1 Q 2 3 Q 4 Q 5 6 11 12 Q 8 9 10 SW 2 SW 3 SW 4 SW 5 11 72 488 113 9 002 8 DESCRIPTION CAPACITORS B K PART No 1000 fd 35 Volt Electrolytic Capacitor 022 001 9 015 100 fd 25 Volt Electro...

Страница 6: ...SJ TEP l OLA l lIt S lfilJC T TO f W f 0 1T N SOC tt SCLtCTOR SET TO lh Hr l OSIHO t I VUtf J 1 S NSITl TV SW l N l TO jl l Ai IV u 01 i t S1 l I IO i G l l G iT SO J tl T Rw t C t I 1 Ill 1S 1 IW 1 4...

Страница 7: ...er general purpose oscilloscope is satisfactory as long as it has external horizontal facilities and is DC coupled The B K Models 1440 1460 and 1465 Oscilloscopes are ideal companions for the Model SO...

Страница 8: ...7 8 17 16 15 14 13 12 II 10 9 18 0 0 Figure 1 Controls and Operator s Facilities 2...

Страница 9: ...rts base to emit ter terminal for measuring collector emitter leakage cur rent with O Volt base bias Selects the gate voltage step value for testing FET s The unit automatically generates gate voltage...

Страница 10: ...sitions of the STEP SELECTOR switch constant voltage steps are generated for testing FET s Five selections from 05 to 1 volt per step are offered The polarity of the voltage steps is inverted in relat...

Страница 11: ...rent thru the semiconductor being tested and the hori zontal divisions must accurately represent the sweep voltage applied to the semiconductor being tested that is the oscilloscope must be calibrated...

Страница 12: ...of reading the horizontal voltage is available by connecting the sweep voltage output of the curve tracer H jack to the horizontal input of the oscillo scope This method will produce a horizontal trac...

Страница 13: ...Ground the vertical input if desired Adjust HORIZONTAL GAIN so 4 Connect a test lead from the H jack of the curve tracer to the horizontal input of the oscilloscope 5 Set the SWEEP VOLTAGE control to...

Страница 14: ...aneously switched from one semiconductor to the other The SOCKET switch may also be used to start and stop the test of the semiconductor merely activate the empty socket to stop the test This allows c...

Страница 15: ...ied for testing zener diodes leakage of signal and rectifier diodes and inverse peak breakdown voltage Forward bias characteristics show voltage drop across the diode junction and resistive or open co...

Страница 16: ...t r 3 2ti l p pr t r 1 l 0 2 3 6 7 8 9 10 ADJUST OSCIL LOSCOPE CENTERING CONTROLS TO PLACE START OF ZERO REFERENCE STEP HERE NPN transistors the display should be posi tioned so the curves start at th...

Страница 17: ...f the display Increasing the setting widens the display and may cause the display to go off scale Decrease and increase the setting of the control and note the effect upon the display If increasing th...

Страница 18: ...s displayed on the VERTICAL SENSITIVITY range being used If the setting is too high some of the curves may reach the current limiting value and be superim posed on each other causing less than five cu...

Страница 19: ...ideal for making contact to transistors mounted on P C Boards Refer to the In circuit Probe section for more information When performing in circuit tests use the fast set up markers on the 501 front...

Страница 20: ...turn the VERTICAL SENSITIVITY to the 1 mA Div position after each test so that the next test begins with full protection NPN vs PNP Transistors As described previously in the Typical Test section the...

Страница 21: ...ent point Simply approx imate the percentage of distance between the curves above and below the poin use it as a percentage of one step to obtain total base current when added to the number of current...

Страница 22: ...to gether at higher collector current Each base current step has precisely the same amount of increase which should cause the collector current curves to be separated by equal amounts if the gain wer...

Страница 23: ...d does not introduce distortion If 6 10 s are imbalanced distortion will be intro duced due to this non linearity The greater the im balance the greater the distortion The distortion measurement can b...

Страница 24: ...would be destroyed by the test Figure 21 shows a typical family of curves with the sweep voltage set high to cause collector break down In the examples shown in the figure break down occurs at a coll...

Страница 25: ...t portion of the family of curves in the area of low collector voltage and current below the knee of each curve Notice that the knee of each curve occurs at approximately the same collector voltage re...

Страница 26: ...tance The transistor s output impedance or collector resistance is the reciprocal of its output admittance and is measured in ohms It may be calculated by transposing the current and voltage values us...

Страница 27: ...collector voltage at various base currents FET curves are a graph of drain current vs drain voltage at various gate voltages FET breakdown voltage may be observed and measured by the same method used...

Страница 28: ...e MOS FET s can be damaged by a voltage transient from a static charge carried by the person handling the device Safeguard against such damage and discharge any static charge by touching ground with o...

Страница 29: ...ty may be determined by the same method as desribed for transistors if the spacing between curves is equal the FET is linear Pinch Off Vp Voltage Measurement An important characteristic for depletion...

Страница 30: ...scale GERMANIUM SILICON 1 100 80 Io ma 0 5 1 1 5 VF volts FORWARD BIAS 2 2 5 When testing diodes only one curve is displayed not a family of curves as displayed for transistors and FET s The forward b...

Страница 31: ...OLT j _ _ 2 I I I ZENER I i 1 1 filgl i I i l j i I I I H i_ i t lJ__tH 10 a 6 VR 4 2 o SHARP ZENER KNEE To obtain the most accurate voltage reading pos sible calibrate the full scale oscilloscope hor...

Страница 32: ...y The curves C E appear quite close together and careful observation may be required to distinguish the individual curves It may be helpful to spread out the display by in creasing the horizontal sens...

Страница 33: ...e Any anode current at anode voltage below the firing point is forward leakage current and can be read directly from the display Reverse Blocking Voltage Reverse blocking voltage is the maximum revers...

Страница 34: ...age and increase the de bias supply until the SCR switches on Measure the value of gate voltage at which switching occurred 2 Set the de bias supply to a specified gate volt age and increase the sweep...

Страница 35: ...I I 1 Vp t I I I I 10 I 1 i I i 1 L 1 1 I 1 I 5 I i I 1 5 J MA I I l l Ip peak current start of tunnel region Iv valley current end of tunnel region Vp peak voltage start of tunnel region Vv valley v...

Страница 36: ...y soldered wires short TP30 TP31 and TP32 to the S Volt line on the PC board 4 Attach a digital voltmeter to TP29 and turn on AC power to the unit 5 Adjust the CALIBRATE pot R36 for a reading of 3 50...

Страница 37: ...board It is most important to follow the explicit control setting and set up pro cedure as given in the notes column in order to obtain the illustrated waveforms Point by point sig nal tracing with a...

Страница 38: ...VAC 50 IOkl l IG H VOLTAGE ECONO Ut f aiJitllttN1 u nsim R Sl l0ll S 6 SEL CTOR to a countdown chain composed of 3 flip flops within two IC packages IC3 and 4 The second flip flop of IC4 is not used...

Страница 39: ...through the SOCKET SELEC TOR to the desired test socket RIGHT or LEFT The higher voltage secondary of the power trans former is full wave rectified by a diode bridge DI through D4 to produce a 120Hz s...

Страница 40: ...se new from an authorl r ed B K distributor Our obligation under this warranty is limited to repairing or replacing any product or component which we are satisfied does not conform with the fore going...

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