351
7679H–CAN–08/08
AT90CAN32/64/128
are meant to contain 0xFF, can be skipped. This does not apply if the EEPROM is re-pro-
grammed without chip erasing the device. In this case, data polling cannot be used for the value
0xFF, and the user will have to wait at least t
WD_EEPROM
before programming the next byte. See
WD_EEPROM
value.
Figure 25-8.
Serial Programming Waveforms
Table 25-14.
Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
Symbol
Minimum Wait Delay
t
WD_FUSE
4.5 ms
t
WD_FLASH
4.5 ms
t
WD_EEPROM
9.0 ms
t
WD_ERASE
9.0 ms
MSB
LSB
LSB
SERIAL CLOCK INPUT
(SCK)
SERIAL DATA INPUT
(MOSI-PDI)
(MISO-PDO)
Sample
SERIAL DATA OUTPUT
MSB
Table 25-15.
Serial Programming Instruction Set
Set
a
= address high bits,
b
= address low bits,
H
= 0 - Low byte, 1 - High Byte,
o
= data out,
i
= data in, x = don’t care
Instruction
Instruction Format
Operation
Byte 1
Byte 2
Byte 3
Byte4
Programming
Enable
1010 1100 0101 0011 xxxx xxxx xxxx xxxx
Enable Serial Programming after RESET goes low.
Chip Erase
1010 1100 100x xxxx xxxx xxxx xxxx xxxx
Chip Erase EEPROM and Flash.
Read
Program Memory
0010
H
000
aaaa
aaaa bbbb bbbb oooo oooo
Read
H
(high or low) data
o
from Program memory at
word address
a
:
b
.
Load
Program Memory
Page
0100
H
000 000x xxxx x
bbb bbbb iiii iiii
Write
H
(high or low) data
i
to Program Memory page
at word address
b
. Data low byte must be loaded
before Data high byte is applied within the same
address.
Write
Program Memory
Page
0100 1100
aaaa
aaaa b
xxx xxxx xxxx xxxx
Write Program Memory Page at address
a
:
b
.
Read
EEPROM Memory
1010 0000 000x
aaaa bbbb bbbb oooo oooo
Read data
o
from EEPROM memory at address
a
:
b
.
Write
EEPROM Memory
1100 0000 000x
aaaa bbbb bbbb iiii iiii
Write data
i
to EEPROM memory at address
a
:
b
.
Содержание AVR AT90CAN128
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