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Rev A
49
3. THEORY OF OPERATION
3.1 INTRODUCTION
The Model 1000S1G6C RF amplifier consists of a 1–6 GHz RF amplifier assembly. The RF amplifier assembly
consists of a Pre-Amplifier (Pre-Amp), one (1) Quadrature-Coupled Amplifier (Quad Amp) used as a driver
one (1) high power Quad amp, (5) 4-Way Splitter, (4) additional high power Quad amps, (16) high power Quad
amp finals, (2) 8-way Combiners (1) 2-Way Combiner and Directional Coupler assembly. Reference Block
Diag. 10052294 for breakdown of RF structure.
The power supply section consists of an AC input, circuit breaker, filter, five switching power supplies, and a
regulator circuit.
The control system consists of a Control/Fault Board, an Interface Board and remote interfaces for IEEE-488,
RS-232, USB, and Ethernet.
Global fault monitoring and reporting is controlled through the front panel display.
3.2 RF AMPLIFIER OPERATION
3.2.1
A1 Pre-Amp
The Pre-Amp is assembled on PTFE composite printed wiring boards. The RF input signal is fed to the A1
Pre-Amp. The pre-amp consists of a GaAs Attenuator, MMICs and a Wilkinson splitter. The attenuator is used
for manual gain control using the front panel gain control and to attenuate RF input signals above 0 dBm by
utilizing internal voltages.
U2 is a broadband GaAs Monolithic Microwave Integrated Circuit (MMIC) and is the first stage of gain in the
amplifier. The output of U2 is fed to the input of the Wilkinson Two-Way Splitter.
The Wilkinson Two-Way Splitter splits the signal into two paths. One output is fed to the input of the A3
Driver Amp and the other output is fed to a detector. The detector output is used to protect the unit in the event
of input overdrive.
The output driver is fed to another MMIC to boost the gain. Total gain is about 30dB.
3.2.2
A2 Driver Amp
The Driver Amp is assembled on thin film substrates. It has two (2) GaN amplifier sections. Each section is
input and output DC isolated by coupling capacitors. A 90
˚
quad coupler combines the RF outputs. 50Ω
termination resistors absorb any difference signals and help to improve the input and output VSWR of the
module. The module has a gain of approximately 10dB and delivers 20 watts of RF power. Active bias circuitry
regulates the DC current through RF devices. The nominal DC current for this amplifier is approximately 3.2A
from a 24V supply. Logic low voltage on the fault pin indicates a low or high current condition exists on GaN
FET 1 (bottom) or FET 2 (top).
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