Electrical Characteristics
© 2008 Advanced Micro Devices, Inc.
41978 AMD RS690M Databook 3.06
Proprietary
5-3
Table 5-6 DC Characteristics for the DDR2 Interface
Symbol
Description
Minimum
Maximum
Comments
VIL(dc)
DC Input Low Voltage
-0.3V
VREF-0.15V
For DQ and DQS
VIH(dc)
DC Input High Voltage
VREF + 0.15V
VDDQ + 0.3V
For DQ and DQS. (VDDQ is I/O voltage
of memory device.)
VIL(ac)
AC Input Low Voltage
–
VREF - 0.31
For DQ and DQS
VIH(ac)
AC Input High Voltage
VREF + 0.31V
–
For DQ and DQS
VUSH
Minimum Voltage Allowed for
Undershoot
- 0.3V
–
For DQ and DQS
VOSH
Maximum Voltage Allowed for
Overshoot
–
VDDQ + 0.3V
For DQ and DQS. (VDDQ is I/O voltage
of memory device.)
VOI
Output Low Voltage
0.186V
0.305V
I_out = 16.5mA
VOH
Output High Voltage
1.90V
2.50V
I_out = -16.5mA
VREF
DC Input Reference Voltage
1.125V
1.375V
ILI
Input Leakage Current
10
µ
A
15
µ
A
ILO
Tri-state Leakage Current
10
µ
A
15
µ
A
CIN
Input Capacitance
3pF
5pF
Table 5-7 DC Characteristics for the TMDS Interface Multiplexed on the PCI Express
®
Gfx Lanes
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Note
VH
Single-ended High Level Output Voltage
AVCC - 10
–
AVCC + 10
mV
1
VL
Single-ended Low Level Output Voltage
AVCC - 600
–
AVCC - 400
mV
1
VSW
Single-ended Output Swing
400
–
600
mV
VOS
Differential Output Overshoot (Ringing)
–
–
15%*2VSW
–
VUS
Differential Output Undershoot (Ringing)
–
–
25%*2VSW
–
Notes:
1 AVCC stands for the termination supply voltage of the receiver, which is 3.3V +/- 5%.
2 Figure 5-1 below illustrates some of the DC characteristics of the TMDS interface.
Содержание RS690M
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