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Winbond W632GG6KB Series, Manual

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Winbond W632GG6KB Series Manual Download Page 7

W632GG6KB 

 

 

Publication Release Date: Jan. 03, 2017 

Revision: A06 

- 7 - 

4.  KEY PARAMETERS 

Speed Bin 

DDR3-1866 

DDR3-1600 

DDR3-1333 

Unit 

CL-nRCD-nRP 

13-13-13 

11-11-11 

9-9-9 

Part Number Extension 

-11 

-12/12I 

-15/15I 

Parameter 

Sym. 

Min. 

Max. 

Min. 

Max. 

Min. 

Max. 

Maximum operating frequency using maximum 
allowed settings for Sup_CL and Sup_CWL 

f

CKMAX

 

 

933 

 

800 

 

667 

MHz 

Internal read command to first data 

t

AA

 

13.91 

20 

13.75 

(13.125) *

5

 

20 

13.5 

(13.125) *

5

 

20 

nS 

ACT to internal read or write delay time 

t

RCD

 

13.91 

 

13.75 

(13.125) *

5

 

 

13.5 

(13.125) *

5

 

 

nS 

PRE command period 

t

RP

 

13.91 

 

13.75 

(13.125) *

5

 

 

13.5 

(13.125) *

5

 

 

nS 

ACT to ACT or REF command period 

t

RC

 

47.91 

 

48.75 

(48.125) *

5

 

 

49.5 

(49.125) *

5

 

 

nS 

ACT to PRE command period 

t

RAS

 

34 

9 * t

REFI

 

35 

9 * t

REFI

 

36 

9 * t

REFI

 

nS 

CL = 6 

CWL = 5 

t

CK(AVG) 

2.5 

3.3 

2.5 

3.3 

2.5 

3.3 

nS 

CL = 7 

CWL = 6 

t

CK(AVG) 

Reserved 

1.875 

< 2.5 

1.875 

< 2.5 

nS 

CL = 8 

CWL = 6 

t

CK(AVG) 

1.875 

< 2.5 

1.875 

< 2.5 

1.875 

< 2.5 

nS 

CL = 9 

CWL = 7 

t

CK(AVG) 

Reserved 

1.5 

< 1.875 

1.5 

< 1.875 

nS 

CL = 10 

CWL = 7 

t

CK(AVG) 

1.5 

< 1.875 

1.5 

< 1.875 

1.5 

< 1.875 

nS 

CL = 11 

CWL = 8 

t

CK(AVG) 

Reserved 

1.25 

< 1.5 

Reserved 

nS 

CL = 13 

CWL = 9 

t

CK(AVG) 

1.07 

< 1.25 

Reserved 

Reserved 

nS 

Supported CL Settings 

Sup_CL 

6, 8, 10, 13 

6, 

(7)

, 8, 

(9)

, 10, 11 

6, 

(7)

, 8, 9, 10 

nCK 

Supported CWL Settings

 

Sup_CWL 

5, 6, 7, 9 

5, 6, 7, 8 

5, 6, 7 

nCK 

Average periodic 
refresh Interval 

-40°C 

≤ T

CASE

 

≤ 85°C 

t

REFI

 

 

 *

2

 

 

7.8 *

2, 3

 

 

7.8 *

2, 3

 

μS 

0°C 

≤ T

CASE

 

≤ 85°C 

 

7.8 *

1

 

 

7.8 *

1

 

 

7.8 *

1

 

μS 

85°C <

 

T

CASE

 

≤ 95°C 

 

3.9 *

4

 

 

3.9 *

4

 

 

3.9 *

4

 

μS 

Operating One Bank Active-Precharge Current 

I

DD0 

 

115 

 

105 

 

100 

mA 

Operating One Bank Active-Read-Precharge 
Current 

I

DD1 

 

140 

 

130 

 

125 

mA 

Operating Burst Read Current 

I

DD4R 

 

280 

 

250 

 

235 

mA 

Operating Burst Write Current 

I

DD4W 

 

250 

 

220 

 

200 

mA 

Burst Refresh Current 

I

DD5B 

 

155 

 

150 

 

145 

mA 

Self-Refresh Current, T

OPER

 = 0 ~ 85°C 

I

DD6 

 

19 

 

19 

 

19 

mA 

Operating Bank Interleave Current 

I

DD7 

 

400 

 

380 

 

370 

mA 

Notes:

 (Field value contents in blue font or parentheses are optional AC parameter and CL setting) 

1.  All speed grades support 0°C 

≤ T

CASE

 

≤ 85°C with full JEDEC AC and DC specifications. 

2.  For -11, -12 and -15 speed grades, -40°C 

≤ T

CASE

 < 0°C is not available. 

3.  12I and 15I speed grades support -40°C 

≤ T

CASE

 

≤ 85°C with full JEDEC AC and DC specifications. 

4.  For all speed grade parts, T

CASE

 is able to extend to 95°C with doubling Auto Refresh commands in frequency to a 32 mS 

period ( t

REFI

 = 3.9 µS), it is mandatory to either use the Manual Self-Refresh mode with Extended Temperature Range 

capability (MR2 A6 = 0

b

 and MR2 A7 = 1

b

) or enable the Auto Self-Refresh mode (ASR) (MR2 A6 = 1

b

, MR2 A7 is don't care). 

5.  For devices supporting optional down binning to CL=7 and CL=9, t

AA

/t

RCD

/t

RP

 min must be 13.125 nS or lower. SPD settings 

must be programmed to match. For example, DDR3-1333 (9-9-9) devices supporting down binning to DDR3-1066 (7-7-7) 
should program 13.125 nS in SPD bytes for t

AA

min (Byte 16), t

RCD

min (Byte 18), and t

RP

min (Byte 20). DDR3-1600 (11-11-11) 

devices supporting down binning to DDR3-1333 (9-9-9) or DDR3-1066 (7-7-7) should program 13.125 nS in SPD bytes for 
t

AA

min (Byte16), t

RCD

min (Byte 18), and t

RP

min (Byte 20). Once t

RP

 (Byte 20) is programmed to 13.125 nS, t

RC

min (Byte 21, 

23) also should be programmed accordingly. For example, 49.125nS (t

RAS

min + t

RP

min = 36 nS + 13.125 nS) for DDR3-1333 

(9-9-9) and 48.125 nS (t

RAS

min + t

RP

min = 35 nS + 13.125 nS) for DDR3-1600 (11-11-11). 

Summary of Contents for W632GG6KB Series

Page 1: ...MR1 20 8 3 2 1 DLL Enable Disable 20 8 3 2 2 Output Driver Impedance Control 21 8 3 2 3 ODT RTT Values 21 8 3 2 4 Additive Latency AL 21 8 3 2 5 Write leveling 21 8 3 2 6 Output Disable 21 8 3 3 Mode...

Page 2: ...Violations 56 8 14 2 1 Motivation 56 8 14 2 2 Data Setup and Hold Violations 56 8 14 2 3 Strobe to Strobe and Strobe to Clock Violations 56 8 14 2 4 Write Timing Parameters 56 8 14 3 Write Data Mask 5...

Page 3: ...Input Signals 106 10 6 7 Slew Rate Definitions for Differential Input Signals 106 10 7 DC and AC Output Measurement Levels 107 10 7 1 Output Slew Rate Definition and Requirements 107 10 7 1 1 Single...

Page 4: ...16 1 AC Timing and Operating Condition for 11 speed grade 138 10 16 2 AC Timing and Operating Condition for 12 12I 15 15I speed grades 142 10 16 3 Timing Parameter Notes 146 10 16 4 Address Command Se...

Page 5: ...DQS DQS pair in a source synchronous fashion 2 FEATURES Power Supply VDD VDDQ 1 5V 0 075V Double Data Rate architecture two data transfers per clock cycle Eight internal banks for concurrent operatio...

Page 6: ...ta mask and differential strobe pairs Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes 2K Byte page size Interface SSTL_15 Packaged in WBGA 96 Ball...

Page 7: ...125 mA Operating Burst Read Current IDD4R 280 250 235 mA Operating Burst Write Current IDD4W 250 220 200 mA Burst Refresh Current IDD5B 155 150 145 mA Self Refresh Current TOPER 0 85 C IDD6 19 19 19 m...

Page 8: ...AP NC A12 BC BA1 VREFCA ZQ VDD VSS DQL5 VSS DQL3 VSSQ VSSQ DQU2 DQU6 VDDQ VSS VSSQ VDDQ VDD VDDQ VSSQ VSSQ VDDQ NC CKE NC VSS VDD DQU7 VSS DQU1 DMU DQL0 DQSL DQSL DQL4 RAS CAS WE BA2 A0 A3 BA0 CS VDD...

Page 9: ...Data Mask DMU and DML are the input mask signals control the lower or upper bytes for write data Input data is masked when DMU DML is sampled HIGH coincident with that input data during a Write access...

Page 10: ...th read data centered in write data DQSU is paired with DQSU to provide differential pair signaling to the system during read and write data transfer DDR3 SDRAM supports differential data strobe only...

Page 11: ...DER ROW DECODER A0 A9 A11 A12 A13 CS RAS CAS WE CK CK PREFETCH REGISTER ODT CONTROL COLUMN DECODER SENSE AMPLIFIER COLUMN DECODER COLUMN DECODER SENSE AMPLIFIER COLUMN DECODER CELL ARRAY BANK 5 ROW DE...

Page 12: ...itialization Procedure 8 2 1 Power up Initialization Sequence The following sequence is required for POWER UP and Initialization 1 Apply power RESET is recommended to be maintained below 0 2 VDD all o...

Page 13: ...e MRS command for MR2 provide Low to BA0 and BA2 High to BA1 7 Issue MRS Command to load MR3 with all application settings To issue MRS command for MR3 provide Low to BA2 High to BA0 and BA1 8 Issue M...

Page 14: ...ower up Initialization Sequence steps 2 to 11 3 The Reset sequence is now completed DDR3 SDRAM is ready for normal operation TIME BREAK DON T CARE Ta Tb Tc Td Te Tf Tg Th Ti Tj Tk CK CK VDD VDDQ RESET...

Page 15: ...ss fields within the accessed mode register must be redefined when the MRS command is issued MRS command and DLL Reset do not affect array contents which mean these commands can be executed any time a...

Page 16: ...and Rtt_Nom DISABLED prior and or after MRS command ODTLoff 1 Figure 4 tMOD Timing The mode register contents can be changed using the same command and timing requirements during normal operation as l...

Page 17: ...1 0 1 0 1 0 1 1 0 16 2 5 2 6 2 7 2 8 2 10 2 14 2 12 2 0 1 Normal Test 0 1 Nibble Sequential Interleave 0 0 A13 CL 0 0 0 0 1 1 1 1 1 1 0 1 BC4 Fixed Reserved BA2 0 1 0 1 0 0 0 1 1 1 1 Reserved Reserve...

Page 18: ...5 6 3 2 1 0 7 6 5 4 2 1 0 0 4 5 6 7 0 1 2 3 4 5 6 7 0 1 2 3 2 1 0 1 5 6 7 4 1 2 3 0 5 4 7 6 1 0 3 2 2 1 1 0 6 7 4 5 2 3 0 1 6 7 4 5 2 3 0 1 2 1 1 1 7 4 5 6 3 0 1 2 7 6 5 4 3 2 1 0 2 WRITE V V V 0 1 2...

Page 19: ...be used i e Read commands or ODT synchronous operations 8 3 1 5 Write Recovery The programmed WR value MR0 bits A9 A10 and A11 is used for the auto precharge feature along with tRP to determine tDAL W...

Page 20: ...tt_Nom settings are allowed in Write Leveling Mode MR1 A 7 1 with MR1 A 12 0 only Rtt_Nom settings of RZQ 2 RZQ 4 and RZQ 6 are allowed 4 If Rtt_Nom is used during Writes only the values RZQ 2 RZQ 4 a...

Page 21: ...trolled by the sum of the AL and CAS Latency CL register settings Write Latency WL is controlled by the sum of the AL and CAS Write Latency CWL register settings A summary of the AL register options a...

Page 22: ...operating temperature range ASR enable Manual SR Reference SRT BA0 A13 1 0 0 1 Reserved Reserved Reserved 1 1 1 1 0 0 1 1 1 A10 0 0 1 1 A9 0 1 0 1 Dynamic ODT off Write does not affect Rtt value Rese...

Page 23: ...ion on page 56 8 3 3 3 Auto Self Refresh ASR and Self Refresh Temperature SRT DDR3 SDRAM must support Self Refresh operation at all supported temperatures Applications requiring Self Refresh operation...

Page 24: ...r read synchronization 3 When MPR control is set for normal operation MR3 A 2 0 then MR3 A 1 0 will be ignored Figure 8 MR3 Definition 8 3 4 1 Multi Purpose Register MPR The Multi Purpose Register MPR...

Page 25: ...f both CL 6 and CWL 6 DLL off mode will affect the Read data Clock to Data Strobe relationship tDQSCK but not the Data Strobe to Data relationship tDQSQ tQH Special attention is needed to line up Read...

Page 26: ...timings from any MRS command are satisfied In addition if any ODT features were enabled in the mode registers when Self Refresh mode was entered the ODT signal must continuously be registered LOW unti...

Page 27: ...eatures are disabled in the mode registers when Self Refresh mode was entered ODT signal can be registered LOW or HIGH 6 Wait tXS then set MR1 bit A0 to 0 to enable the DLL 7 Wait tMRD then set MR0 bi...

Page 28: ...below the minimum operating frequency would require the use of DLL_on mode DLL_off mode transition sequence refer to section 8 7 DLL on off switching procedure on page 26 8 8 2 Frequency change during...

Page 29: ...k frequency tCKSRX Notes 1 Applicable for both SLOW EXIT and FAST EXIT Precharge Power down 2 tAOFPD and tAOF must be satisfied and outputs High Z prior to T1 refer to ODT timing section for exact req...

Page 30: ...ides tDQSS tDSS and tDSH specification also needs to be fulfilled One way to achieve this is to combine the actual tDQSS in the application with an appropriate duty cycle and jitter on the DQS DQS sig...

Page 31: ...MRS command performing the exit MR1 A7 0 may also change MR1 bits of A12 A9 A6 A5 and A2 A1 Since the controller levels one rank at a time the output of other ranks must be disabled by setting MR1 bit...

Page 32: ...If feedback is driven only on one DQ the remaining DQs must be driven low as shown in above Figure and maintained at this state through out the leveling procedure 2 MRS Load MR1 to enter write leveli...

Page 33: ...Tb0 3 After the RTT is switched off disable Write Level Mode via MRS command see Tc2 4 After tMOD is satisfied Te1 any valid command may be registered MR commands may be issued after tMRD Td1 TIME BR...

Page 34: ...Multi Purpose Register The resulting operation when a RD or RDA command is issued is defined by MR3 bits A 1 0 when the MPR is enabled as shown in Table 6 When the MPR is enabled only RD or RDA comma...

Page 35: ...to 0 1 2 3 4 5 6 7 For Burst Chop 4 cases the burst order is switched on nibble base A 2 0b Burst order 0 1 2 3 A 2 1b Burst order 4 5 6 7 A 9 3 Don t care A10 AP Don t care A12 BC Selects burst chop...

Page 36: ...order 0 1 2 3 BC4 100b Burst order 4 5 6 7 1b 11b RFU BL8 000b Burst order 0 1 2 3 4 5 6 7 BC4 000b Burst order 0 1 2 3 BC4 100b Burst order 4 5 6 7 Note Burst order bit 0 is assigned to LSB and the...

Page 37: ...rsts out the pre defined Read Calibration Pattern Memory controller repeats these calibration reads until read data capture at memory controller is optimized After end of last MPR read burst wait unti...

Page 38: ...Tc7 BA NOP NOP VALID 3 3 0 0 2 VALID 1 0 2 0 00 00 0 0 0 0 0 0 1 A 1 0 A 2 A 9 3 A10 AP A 11 A12 BC DQS DQS DQ RL tRP tMOD VALID 1 VALID VALID VALID VALID tMPRR tMOD Tc8 Tc9 Td NOTES 1 RD with BL8 eit...

Page 39: ...0 0 0 0 1 A 1 0 A 2 A 9 3 A10 AP A 11 A12 BC DQS DQS DQ RL VALID 1 VALID VALID VALID VALID tMPRR Tc8 Tc9 Td T10 3 VALID VALID 0 00 VALID 0 VALID 0 VALID 0 VALID 1 RL 0 2 0 2 READ 1 TIME BREAK DON T CA...

Page 40: ...0 A 2 A 9 3 A10 AP A 11 A12 BC DQS DQS DQ RL VALID 1 VALID VALID VALID VALID tMPRR tMOD Tc8 Tc9 Td T10 VALID VALID VALID VALID VALID 1 RL 0 2 1 4 READ 1 3 VALID 0 00 0 0 0 NOTES 1 RD with BC4 either...

Page 41: ...0 A 2 A 9 3 A10 AP A 11 A12 BC DQS DQS DQ RL VALID 1 VALID VALID VALID VALID tMPRR tMOD Tc8 Tc9 Td T10 VALID VALID VALID VALID VALID 1 RL 0 2 0 3 READ 1 3 VALID 0 00 0 0 0 NOTES 1 RD with BC4 either b...

Page 42: ...or the open row in all banks The bank s will be available for a subsequent row activation a specified time tRP after the PRECHARGE command is issued except in the case of concurrent auto precharge wh...

Page 43: ...2 Dout n data out from column n 3 NOP commands are shown for ease of illustration other commands may be valid at these times 4 BL8 setting activated by either MR0 A 1 0 00 or MR0 A 1 0 01 and A12 1 d...

Page 44: ...ime tDQSQ describes the latest valid transition of the associated DQ pins tQH describes the earliest invalid transition of the associated DQ pins Falling data strobe edge parameters tQSL describes the...

Page 45: ...obe tRPRE RL Measured to this point tRPST Notes 1 Within a burst rising strobe edge is not necessarily fixed to be always at tDQSCK min or tDQSCK max Instead rising strobe edge can vary between tDQSCK...

Page 46: ...2 Last data valid Dout n tRPRE tRPST NOP NOP NOP RL AL CL Dout n Dout n 1 Dout n 2 Dout n 4 Dout n 5 Dout n 6 Dout n 7 Dout n 1 Dout n 2 Dout n 4 Dout n 5 Dout n 6 Dout n 7 Dout n 1 Dout n 2 Dout n 3...

Page 47: ...LZ DQ by measuring the signal at two different voltages The actual voltage measurement points are not critical as long as the calculation is consistent The parameters tLZ DQS tLZ DQ tHZ DQS and tHZ DQ...

Page 48: ...cation tA tB tC tD t2 t1 tRPRE tRPRE_end tRPRE_begin VTT 0 VTT VTT Figure 27 Method for calculating tRPRE transitions and endpoints 8 13 2 5 tRPST Calculation The method for calculating differential p...

Page 49: ...or MR0 A 1 0 01 and A12 1 during READ commands at T0 and T4 Figure 29 READ BL8 to READ BL8 T0 T1 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK CK Command 3 READ Address 4 NOP NOP NOP NOP READ NOP Bank Col n DQS DQ...

Page 50: ...0 and T4 Figure 31 READ BC4 to READ BC4 T0 T1 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK CK Command 3 READ Address 4 NOP NOP NOP NOP NOP Bank Col n DQS DQS DQ 2 RL 6 Dout n Dout n 1 WL 5 tRPRE Dout n 2 Dout n 3...

Page 51: ...nd at T0 and WRITE command at T5 Bank Col n Bank Col b READ to WRITE Command Delay RL tCCD 2 2tCK WL TIME BREAK Figure 33 READ BC4 to WRITE BC4 OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 CK CK Command 3 RE...

Page 52: ...0 A 1 0 01 and A12 1 during READ command at T4 Figure 35 READ BC4 to READ BL8 OTF T0 T1 T3 T4 T5 T6 T7 T8 T9 T10 T11 CK CK Command 3 READ Address 4 NOP NOP NOP WRITE NOP DQS DQS DQ 2 RL 6 Dout n Dout...

Page 53: ...in b 1 Din b 2 Din b 7 T16 NOP NOP NOP tRPST tWPRE 4 clocks tWR tWTR TRANSITIONING DATA DON T CARE NOTES 1 RL 6 CL 6 AL 0 WL 5 CWL 5 AL 0 2 Dout n data out from column Din b data in from column b 3 NO...

Page 54: ...The minimum RAS cycle time tRC MIN from the previous bank activation has been satisfied Examples of Read commands followed by Precharge are show in Figure 38 and Figure 39 T0 T1 T2 T3 T4 T5 T6 T7 T8 T...

Page 55: ...Dout n Dout n 1 Dout n 2 Dout n 3 DQS DQS DQ BL4 Operation BL8 Operation tRP AL CL 2 9 T26 NOP tRTP Bank a Row b TRANSITIONING DATA DON T CARE NOTES 1 RL 20 CL 11 AL CL 2 2 Dout n data out from colum...

Page 56: ...on page 57 the relevant strobe edges for write burst A are associated with the clock edges T5 T5 5 T6 T6 5 T7 T7 5 T8 T8 5 Subsequent reads from that location might result in unpredictable read data...

Page 57: ...tDSS tWPRE min tDSH tDQSS tDSH tDSH tDSH tWPST min tDQSH min tDSS tDSS tDSS tDSS tDSS tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL tDQSH tDQSL min tDQSS max Notes 1 BL8 WL 5 AL 0 CWL 5 2 Din n data in fr...

Page 58: ...for tWPRE specification VTT 0 V t1 tWPRE tWPRE_begin t2 tWPRE_end Figure 41 Method for calculating tWPRE transitions and endpoints 8 14 5 tWPST Calculation The method for calculating differential pul...

Page 59: ...1 0 00 or MR0 A 1 0 01 and A12 1 during WRITE command at T0 Figure 43 WRITE Burst Operation WL 5 AL 0 CWL 5 BL8 T0 T1 T5 T6 T9 T10 T11 T12 T13 T14 T15 CK CK Command 3 Address 4 DQS DQS DQ 2 Din n Din...

Page 60: ...ts with the first rising clock edge after the last write data shown at T7 Figure 45 WRITE BC4 to READ BC4 Operation T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Tn CK CK Command 3 Address 4 DQS DQS DQ 2 Din n Din n...

Page 61: ...ure 47 WRITE BC4 OTF to PRECHARGE Operation T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 CK CK Command 3 Address 4 DQS DQS DQ 2 Din n Din n 2 Din n 3 Bank Col n WL 5 tWPRE Din n 1 tWPST 4 clocks Bank Col b T12 T...

Page 62: ...NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP TRANSITIONING DATA DON T CARE Bank Col b Bank Col n Figure 49 WRITE BC4 to WRITE BC4 OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Din n Din n 2 Din n...

Page 63: ...CK CK Command 3 Address 4 DQS DQS DQ 2 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP READ NOP NOP NOP NOP TRANSITIONING DATA DON T CARE Bank Col b Bank Col n 4 clocks Figure 51 WRITE BC4 to READ BC4 BL8...

Page 64: ...IONING DATA DON T CARE Bank Col b Bank Col n Din n 7 Din b 1 Din b 2 Din b tWR WL 5 tCCD Figure 53 WRITE BL8 to WRITE BC4 OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Din n Din n 2 Din n 3 WL 5 tWPRE Din n 1...

Page 65: ...poned during operation of the DDR3 SDRAM meaning that at no point in time more than a total of 8 Refresh commands are allowed to be postponed In case that 8 Refresh commands are postponed in a row the...

Page 66: ...ease Date Jan 03 2017 Revision A06 66 tRFC 8 REF Commands pulled in tREFI 9 x tREFI t Figure 56 Postponing Refresh Commands Example tRFC 8 REF Commands pulled in tREFI 9 x tREFI t Figure 57 Pulling in...

Page 67: ...nd that first Write operation or first Write Leveling Activity may not occur earlier than 512 nCK after exit from Self Refresh The DRAM initiates a minimum of one Refresh command internally within tCK...

Page 68: ...m of one extra refresh command before it is put back into Self Refresh Mode T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 CK CK Command Tf0 Te0 VALID VALID VALID NOP SRE NOP NOP 1 VALID 2 VALID 3 SRX VALID VALID tRP O...

Page 69: ...e defined as tCPDED CKE_low will result in deactivation of command and address receivers after tCPDED has expired Table 7 Power Down Entry Definitions Status of DRAM MRS bit A12 DLL PD Exit Relevant P...

Page 70: ...ining open after completion of the precharge command Figure 59 Active Power Down Entry and Exit Timing Diagram T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Ta8 CK CK Command Address DQS DQS DQ BL8 Dout b Dou...

Page 71: ...CARE Power Down Entery DQS DQS DQ BL8 DQ BC4 Start Internal Precharge A10 CKE Note 1 tWR is programmed through MR0 Figure 61 Power Down Entry after Write with Auto Precharge T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4...

Page 72: ...ower Down Mode tPD Command CKE TIME BREAK DON T CARE VALID Figure 63 Precharge Power Down Fast Exit Mode Entry and Exit T0 T1 T2 Ta0 Tb0 Tb1 Tc0 CK CK NOP NOP tIS Ta1 NOP NOP NOP VALID VALID tIH tIS t...

Page 73: ...S tCPDED Command Address VALID NOP T3 VALID CKE CK TIME BREAK DON T CARE VALID VALID Figure 65 Refresh Command to Power Down Entry T0 T1 T2 Ta0 CK ACTIVE NOP Ta1 NOP VALID VALID tPD tACTPDEN tIS tCPDE...

Page 74: ...N tIS tCPDED Command Address VALID NOP T3 VALID CKE CK TIME BREAK DON T CARE VALID VALID Figure 67 Precharge Precharge all Command to Power Down Entry T0 T1 Ta0 Tb0 MRS NOP Tb1 NOP VALID VALID tPD tMR...

Page 75: ...E intensive operations for example repeated PD Exit Refresh PD Entry sequences the number of clock cycles between PD Exit and PD Entry may be insufficient to keep the DLL updated Therefore the followi...

Page 76: ...the Refresh command is satisfied This means CKE can not be registered low twice within a tRFC min window A detailed example of Case 3 is shown in Figure 71 T0 T1 T2 Ta1 CK CK REF NOP Tb0 NOP NOP NOP t...

Page 77: ...CK for all speed bins assuming the maximum sensitivities specified in the Output Driver Voltage and Temperature Sensitivity and ODT Voltage and Temperature Sensitivity tables The appropriate interval...

Page 78: ...rmination must be disabled via the ODT signal or MRS during the calibration procedure 3 All devices connected to the DQ bus should be high impedance during the calibration procedure Figure 72 ZQ Calib...

Page 79: ...ODT feature is shown in Figure 73 VDDQ 2 Swtich ODT RTT To other circuitry like RCV DQ DQS DM Figure 73 Functional Representation of ODT The switch is enabled by the internal ODT control logic which u...

Page 80: ...Symbol Parameter DDR3 1333 DDR3 1600 DDR3 1866 Unit ODTLon ODT turn on Latency WL 2 CWL AL 2 nCK ODTLoff ODT turn off Latency WL 2 CWL AL 2 8 19 2 2 Timing Parameters In synchronous ODT mode the follo...

Page 81: ...CARE Figure 74 Synchronous ODT Timing AL 3 CWL 5 ODTLon AL CWL 2 6 ODTLoff AL CWL 2 6 T0 T1 T2 T4 CK CK T5 T3 ODT T6 T7 tAONmin T8 T9 T10 T12 T13 T14 T15 T11 tAONmax Rtt_Nom tAOFmin tAOFmax CKE DRAM_...

Page 82: ...timing may apply If DRAM stops driving late i e tHZ is late then DRAM complies with tAONmax timing Note that ODT may be disabled earlier before the Read and enabled later after the Read than shown in...

Page 83: ...rite command WR WRA WRS4 WRS8 WRAS4 WRAS8 is registered and if Dynamic ODT is enabled the termination is controlled as follows A latency ODTLcnw after the write command termination strength Rtt_WR is...

Page 84: ...fter Write BL 4 ODTH4 Registering Write with ODT high ODT registered low ODTH4 4 tCK avg Minimum ODT high time after Write BL 8 ODTH8 Registering Write with ODT high ODT registered low ODTH4 6 tCK avg...

Page 85: ...ODTLcwn4 tADCmax tADCmin tAOFmax tAOFmin WL WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP RTT DQ DQS DQS Rtt_WR Rtt_Nom TRANSITIONING DON T CARE NOTES Example for BC4 via MRS or OTF AL 0 CW...

Page 86: ...gistered low at T5 would also be legal Figure 78 Dynamic ODT Behavior without write command AL 0 CWL 5 T0 T1 T2 T4 CK CK DON T CARE T5 T3 ODT T6 T7 T8 T9 T10 T11 NOP TRANSITIONING tAOFmin Address Rtt_...

Page 87: ...red low at T5 would also be legal Figure 80 Dynamic ODT Behavior with ODT pin being asserted together with write command for a duration of 6 clock cycles example for BC4 via MRS or OTF AL 0 CWL 5 T0 T...

Page 88: ...resistance is fully on tAONPDmin and tAONPDmax are measured from ODT being sampled high Minimum RTT turn off time tAOFPDmin is the point in time when the devices termination circuit starts to turn of...

Page 89: ...in starts with the clock cycle where CKE is first registered low The transition period begins with the starting point of tANPD and terminates at the end point of tCPDED min as shown in Figure 83 If th...

Page 90: ...Dmin RTT tAOFPDmax NOP NOP NOP NOP NOP NOP tCPDED tCPDEDmin tANPD ODTLoff PD entry transition period tAOFPDmax ODTLoff tAOFmin ODTLoff tAOFmax PD entry transition period tAOFPDmin CKE RTT Sync or asyn...

Page 91: ...NOP NOP REF NOP RTT RTT tAOFPDmax Last sync ODT RTT Sync or async ODT RTT First async ODT tAOFPDmin ODTLoff tAOFPDmax tAOFPDmin tRFC min ODTLoff tAOFPDmin PD entry transition period tCPDEDmin tANPD OD...

Page 92: ...ertion during the transition period may result in an RTT change as early as the smaller of tAOFPDmin and ODTLoff tCK avg tAOFmin and as late as the larger of tAOFPDmax and ODTLoff tCK avg tAOFmax See...

Page 93: ...ansition periods for PD exit and PD entry may overlap In this case the response of the DDR3 SDRAMs RTT to a change in ODT state at the input may be synchronous OR asynchronous from the start of the PD...

Page 94: ...BC4 on the Fly WRS4 H H L H L L BA RFU L L CA 5 Write BL8 on the Fly WRS8 H H L H L L BA RFU H L CA 5 Write with Auto Precharge Fixed BL8 or BC4 WRA H H L H L L BA RFU V H CA 5 Write with Auto Precha...

Page 95: ...s described in this table The ODT function is not available during Self Refresh 8 Self Refresh Exit is asynchronous 9 VREF Both VREFDQ and VREFCA must be maintained during Self Refresh operation VREFD...

Page 96: ...n of CKE H L or CKE L H the CKE level must be maintained until 1nCK prior to tCKEmin being satisfied at which time CKE may transition again 7 DESELECT and NOP are defined in the Command Truth Table 8...

Page 97: ...From any state RESET ZQCL MRS SRE SRX REF PDE PDX ACT ZQCL ZQCS PDX PDE Write Read Read A Write A Write A Read A PRE PREA PRE PREA PRE PREA Write A Read Write Write Read CKE_L CKE_L CKE_ L Automatic s...

Page 98: ...otes 1 Operating Temperature TOPER is the case surface temperature on the center top side of the DRAM For measurement conditions please refer to the JEDEC document JESD51 2 2 During operation the DRAM...

Page 99: ...ad presented by a production tester System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment Manufacturers correlate to their productio...

Page 100: ...or ADD CMD inputs VREFCA DC 0 49 x VDD 0 51 x VDD 0 49 x VDD 0 51 x VDD V 3 4 Notes 1 For input only pins except RESET VREF VREFCA DC 2 See section 10 12 Overshoot and Undershoot Specifications on pag...

Page 101: ...V 1 2 8 Reference Voltage for DQ DM inputs VREFDQ DC 0 49 x VDD 0 51 x VDD 0 49 x VDD 0 51 x VDD V 3 4 Notes 1 VREF VREFDQ DC 2 See section 10 12 Overshoot and Undershoot Specifications on page 121 3...

Page 102: ...C tolerance and VREF AC noise limits The voltage levels for setup and hold time measurements VIH AC VIH DC VIL AC and VIL DC are dependent on VREF VREF shall be understood as VREF DC as defined in Fig...

Page 103: ...CK CK use VIH CA AC VIL CA AC of ADD CMD and VREFCA for DQSL DQSL DQSU DQSU use VIH DQ AC VIL DQ AC of DQs and VREFDQ if a reduced AC high or AC low level is used for a signal group then the reduced...

Page 104: ...s VIH DQ AC VIL DQ AC for DQ signals in every half cycle preceding and following a valid transition Note that the applicable ac levels for ADD CMD and DQ s might be different per speed bin etc E g if...

Page 105: ...For single ended components of differential signals the requirement to reach VSELmax VSEHmin has no bearing on timing but adds a restriction on the common mode characteristics of these signals 10 6 5...

Page 106: ...le Ended Input Signals See section 10 16 4 Address Command Setup Hold and Derating on page 149 for single ended slew rate definitions for address and command signals See section 10 16 5 Data Setup Hol...

Page 107: ...VTT VDDQ 2 at each of the differential outputs 10 7 1 Output Slew Rate Definition and Requirements The slew rate definition depends if the signal is single ended or differential For the relevant AC o...

Page 108: ...e 27 and Figure 94 Table 27 Single ended Output Slew Rate Definition Description Measured Defined by from to Single ended output slew rate for rising edge VOL AC VOH AC VOH AC VOL AC TRse Single ended...

Page 109: ...28 Differential Output Slew Rate Definition Description Measured Defined by from to Differential output slew rate for rising edge VOL DIFF AC VOH DIFF AC VOH DIFF AC VOL DIFF AC TRdiff Differential o...

Page 110: ...elected via MR1 settings RON34 RZQ 7 nominal 34 3 10 with nominal RZQ 240 RON40 RZQ 6 nominal 40 0 10 with nominal RZQ 240 The individual pull up and pull down resistors RONPu and RONPd are defined as...

Page 111: ...1 2 3 VOMDC 0 5 VDDQ 0 9 1 0 1 1 RZQ 6 1 2 3 VOHDC 0 8 VDDQ 0 6 1 0 1 1 RZQ 6 1 2 3 Mismatch between pull up and pull down MMPuPd VOMDC 0 5 VDDQ 10 10 1 2 4 Notes 1 The tolerance limits are specified...

Page 112: ...Driver Sensitivity Definition MIN MAX UNIT RONPU VOHDC 0 6 dRONdTH T dRONdVH V 1 1 dRONdTH T dRONdVH V RZQ 7 RON VOMDC 0 9 dRONdTM T dRONdVM V 1 1 dRONdTM T dRONdVM V RZQ 7 RONPD VOLDC 0 6 dRONdTL T...

Page 113: ...d DQS DQS pins A functional representation of the on die termination is shown in Figure 97 The individual pull up and pull down resistors RTTPu and RTTPd are defined as follows RTTPu Out Out DDQ I V V...

Page 114: ...sitivity 3 The tolerance limits are specified under the condition that VDDQ VDD and that VSSQ VSS 4 Measurement definition for RTT Apply VIH AC to pin under test and measure current I VIH AC then appl...

Page 115: ...SFPUPD 1 2 3 4 5 RTT60PU120 VOMDC 0 5 VDDQ 0 9 1 0 1 1 RZQ TISFPUPD 1 2 3 4 5 RTT40PU80 VOHDC 0 8 VDDQ 0 6 1 0 1 1 RZQ TISFPUPD 1 2 3 4 5 RTT30PU60 RTT20PU40 Notes 1 TISFPUPD Termination Impedance Sca...

Page 116: ...DTLon Extrapolated point at VSSQ Figure 99 tAONPD Rising edge of CK CK with ODT being first registered high Extrapolated point at VSSQ Figure 100 tAOF Rising edge of CK CK defined by the end point of...

Page 117: ...at VSSQ DQ DM DQS DQS Begin point Rising edge of CK CK defined by the end point of ODTL on VTT VSSQ Figure 99 Definition of tAON CK CK tAONPD VSSQ VSW2 VSW1 TSW1 TSW2 End point Extrapolated point at V...

Page 118: ...Q DM DQS DQS Begin point Rising edge of CK CK defined by the end point of ODTLoff VTT VSSQ VRtt_Nom Figure 101 Definition of tAOF CK CK tAOFPD VSW2 VSW1 TSW1 TSW2 End point Extrapolated point at VRtt_...

Page 119: ...polated point at VRtt_Nom DQ DM DQS DQS Begin point Rising edge of CK CK defined by the end point of ODTLcnw VRtt_Nom tADC TSW1 TSW2 End point Extrapolated point at VRtt_WR Begin point Rising edge of...

Page 120: ...pF 2 3 11 Input output capacitance of ZQ signal CZQ 3 3 3 pF 2 3 12 Notes 1 Although the DM signals have different functions the loading matches DQ and DQS 2 This parameter is not subject to producti...

Page 121: ...above VDD 0 4 0 33 0 28 V nS Maximum undershoot area below VSS 0 4 0 33 0 28 V nS 10 12 2 AC Overshoot Undershoot Specification for Clock Data Strobe and Mask pins Applies to CK CK DQ DQS DQS DM PARA...

Page 122: ...e using one merged power layer in Module PCB For IDD and IDDQ measurements the following definitions apply 0 and LOW is defined as VIN VILAC max 1 and HIGH is defined as VIN VIHAC min MID LEVEL is def...

Page 123: ...load condition may be different from above Figure 105 Measurement Setup and Test Load for IDD and IDDQ optional Measurements Application specific memory channel environment Channel IO Power simulation...

Page 124: ...d in Mode Registers 2 ODT Signal toggling according to Table 43 Pattern Details see Table 43 IDDQ2NT Precharge Standby ODT IDDQ Current Same definition like for IDD2NT however measuring IDDQ current i...

Page 125: ...ure Range SRT Normal 5 CKE Low External clock Off CK and CK LOW CL see Table 38 BL 8 1 AL 0 CS Command Address Bank Address Data IO MID LEVEL DM stable at 0 Bank Activity Self Refresh operation Output...

Page 126: ...1 1 0 0 0 0 0 F 0 1 nRC 1 2 D D 1 0 0 0 0 0 0 0 0 F 0 1 nRC 3 4 D D 1 1 1 1 0 0 0 0 0 F 0 Repeat pattern nRC 1 4 until nRC nRAS 1 truncate if necessary 1 nRC nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 Repeat patt...

Page 127: ...1 1 1 1 0 0 0 0 0 F 0 Repeat pattern nRC 1 4 until nRC nRCD 1 truncate if necessary 1 nRC nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011 Repeat pattern nRC 1 4 until nRC nRAS 1 truncate if necessary 1 nRC nR...

Page 128: ...Sub Loop 0 use BA 2 0 7 instead Notes 1 DM must be driven LOW all the time DQS DQS are MID LEVEL 2 DQ signals are MID LEVEL Table 43 IDD2NT and IDDQ2NT Measurement Loop Pattern1 CK CK CKE Sub Loop Cyc...

Page 129: ...Commands otherwise MID LEVEL 2 Burst Sequence driven on each DQ signal by Read Command Outside burst operation DQ signals are MID LEVEL Table 45 IDD4W Measurement Loop Pattern1 CK CK CKE Sub Loop Cyc...

Page 130: ...D 1 0 0 0 0 0 0 0 0 0 0 3 4 D D 1 1 1 1 0 0 0 0 0 F 0 5 8 Repeat cycles 1 4 but BA 2 0 1 9 12 Repeat cycles 1 4 but BA 2 0 2 13 16 Repeat cycles 1 4 but BA 2 0 3 17 20 Repeat cycles 1 4 but BA 2 0 4 2...

Page 131: ...9 nFAW 4 nRRD D 1 0 0 0 0 7 0 0 0 F 0 Assert and repeat above D Command until 2 nFAW 1 if necessary 10 2 nFAW 0 ACT 0 0 1 1 0 0 0 0 0 F 0 2 nFAW 1 RDA 0 1 0 1 0 0 0 1 0 F 0 00110011 2 nFAW 2 D 1 0 0 0...

Page 132: ...ive Power Down Current 55 60 65 mA IDD4R Operating Burst Read Current 235 250 280 mA IDD4W Operating Burst Write Current 200 220 250 mA IDD5B Burst Refresh Current 145 150 155 mA IDD6 Self Refresh Cur...

Page 133: ...onsecutive rising edge tCK abs is not subject to production test Definition for tCH avg and tCL avg tCH avg is defined as the average high pulse width as calculated across any consecutive 200 high pul...

Page 134: ...on 15 15I Parameter Symbol Min Max Maximum operating frequency using maximum allowed settings for Sup_CL and Sup_CWL fCKMAX 667 MHz Internal read command to first data tAA 13 5 13 125 9 20 nS ACT to i...

Page 135: ...L 5 tCK AVG 2 5 3 3 nS 1 2 3 4 7 CWL 6 7 8 tCK AVG Reserved nS 5 CL 7 CWL 5 tCK AVG Reserved nS 5 CWL 6 tCK AVG 1 875 2 5 nS 1 2 3 4 7 Optional 9 nS 5 CWL 7 8 tCK AVG Reserved nS 5 CL 8 CWL 5 tCK AVG...

Page 136: ...ite delay time tRCD 13 91 nS PRE command period tRP 13 91 nS ACT to ACT or REF command period tRC 47 91 nS ACT to PRE command period tRAS 34 9 tREFI nS CL 6 CWL 5 tCK AVG 2 5 3 3 nS 1 2 3 4 8 CWL 6 7...

Page 137: ...User must program a different value 6 Any DDR3 1333 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by De...

Page 138: ...itter during DLL locking period 50 50 pS tJIT cc Cycle to Cycle Period Jitter 120 pS tJIT cc lck Cycle to Cycle Period Jitter during DLL locking period 100 pS tJIT duty Clock Duty Cycle Jitter Already...

Page 139: ...high time 0 4 tCK avg 18 23 tQSL DQS DQS differential output low time 0 4 tCK avg 18 23 tWPRE DQS DQS differential WRITE Preamble 0 9 tCK avg 46 tWPST DQS DQS differential WRITE Postamble 0 3 tCK avg...

Page 140: ...200 pS 9 41 42 tIS AC125 Command and Address setup time to CK CK Base specification 150 pS 9 41 VREF 1 V nS 275 pS 9 41 42 tIH DC100 Command and Address hold time from CK CK Base specification 100 pS...

Page 141: ...command to Power Down entry BC4MRS Min WL 2 roundup tWR min tCK avg Max nCK 20 tWRAPDEN Timing of WRA command to Power Down entry BC4MRS Min WL 2 WR 1 Max nCK 19 tREFPDEN Timing of REF command to Powe...

Page 142: ...DLL locking period 60 60 70 70 pS tJIT cc Cycle to Cycle Period Jitter 140 160 pS tJIT cc lck Cycle to Cycle Period Jitter during DLL locking period 120 140 pS tJIT duty Clock Duty Cycle Jitter Alrea...

Page 143: ...ITE Preamble 0 9 0 9 tCK avg 46 tWPST DQS DQS differential WRITE Postamble 0 3 0 3 tCK avg 46 tDQSCK DQS DQS rising edge output access time from rising CK CK 225 225 255 255 pS 17 23 tLZ DQS DQS and D...

Page 144: ...CK CK Base specification 120 140 pS 9 41 VREF 1 V nS 220 240 pS 9 41 42 tIPW Control address and control input pulse width for each input 560 620 pS 10 Calibration Timing tZQinit Power up and RESET c...

Page 145: ...tWRPDEN Timing of WR command to Power Down entry BC4MRS Min WL 2 roundup tWR min tCK avg Max nCK 20 tWRAPDEN Timing of WRA command to Power Down entry BC4MRS Min WL 2 WR 1 Max nCK 19 tREFPDEN Timing o...

Page 146: ...evice will support tnRP RU tRP tCK avg 9 as long as the input clock jitter specifications are met i e Precharge command at Tm and Active command at Tm 9 is valid even if Tm 9 Tm is less than 13 5nS du...

Page 147: ...DEN it is necessary to round up tWR min tCK avg to the next integer value 21 The maximum read preamble is bound by tLZ DQS min on the left side and tDQSCK max on the right side See Figure 24 READ Timi...

Page 148: ...understood that the relationship between the average timing tCK avg and the respective absolute instantaneous timing tCK abs holds all times 38 tCH abs is the absolute instantaneous clock high pulse w...

Page 149: ...ignal is earlier than the nominal slew rate line anywhere between shaded DC to VREF DC region the slew rate of a tangent line to the actual signal from the DC level to VREF DC level is used for derati...

Page 150: ...9 18 1 10 7 2 15 8 23 24 0 5 35 40 35 40 35 40 27 32 19 24 11 16 2 6 5 10 0 4 62 60 62 60 62 60 54 52 46 44 38 36 30 26 22 10 Table 50 Derating values DDR3 1333 1600 tIS tIH AC DC based Alternate AC15...

Page 151: ...AC125 Threshold VIH AC VREF DC 125mV VIL AC VREF DC 125mV CK CK Differential Slew Rate 4 0 V nS 3 0 V nS 2 0 V nS 1 8 V nS 1 6 V nS 1 4 V nS 1 2 V nS 1 0 V nS tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH t...

Page 152: ...to AC region nominal slew rate VREF to AC region tVAC TF TR Setup Slew Rate Falling Signal VREF DC VIL AC max TF Setup Slew Rate Rising Signal VIH AC min VREF DC TR tDS tDH tDS tDH Note Clock and Stro...

Page 153: ...gion nominal slew rate DC to VREF region TF TR tDS tDH tDS tDH Note Clock and Strobe are drawn on a different time scale Hold Slew Rate Rising Signal VREF DC VIL DC max TR Hold Slew Rate Falling Signa...

Page 154: ...nal line nominal line tVAC tVAC Setup Slew Rate Rising Signal tangent line VIH AC min VREF DC TR Setup Slew Rate Falling Signal tangent line VREF DC VIL AC max TF tIS tIH tIS tIH tDS tDH tDS tDH Note...

Page 155: ...Signal tangent line VREF DC VIL DC max TR DC to VREF region tangent line nominal line Hold Slew Rate Falling Signal tangent line VIH DC min VREF DC TF tIS tIH tIS tIH tDS tDH tDS tDH Note Clock and S...

Page 156: ...as the slew rate between the last crossing of VIH DC min and the first crossing of VREF DC see Figure 108 If the actual signal is always later than the nominal slew rate line between shaded DC level t...

Page 157: ...Differential Slew Rate 8 0 V nS 7 0 V nS 6 0 V nS 5 0 V nS 4 0 V nS 3 0 V nS 2 0 V nS 1 8 V nS 1 6 V nS 1 4 V nS 1 2 V nS 1 0 V nS tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS t...

Page 158: ...ddd 0 15 0 10 0 20 0 15 0 80 BSC 0 80 BSC 6 40 BSC 12 00 BSC 1 20 0 40 0 50 13 10 9 10 9 00 13 00 8 90 12 90 0 40 0 25 D eE E1 eD D1 2 3 7 8 9 E A B C D E F G H J K L M N P R C ccc C A C aaa B C bbb...

Page 159: ...ove VIH AC below VIL AC for valid DQ transition spec Table 57 A03 Dec 09 2013 11 Added block diagram 7 134 135 137 Added CL 7 CWL 6 support for DDR3 1600 and DDR3 1333 speed bins 5 7 98 122 132 135 14...

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