Texas Instruments TPS70151 Series, User Manual, Page: 11 / 28

Bill of Materials
1-5 Introduction
1.4 Bill of Materials
Table 1–2 lists materials required for the SLVP152 EVM.
Table 1–2. SLVP152 EVM Bill of Materials
Ref Des Qty Part Number Description MFG Size
C1 1 ECJ-2VF1C105Z Capacitor, ceramic, 1.0 uF, 16 V,
80% – 20%, Y5V Panasonic 805
C4 – 7, 9,
14, 15 7 GRM39X7R104K016A Capacitor, ceramic, 0.1 uF, 16 V, 10%,
X7R Murata 603
C2 – 3 2 TPSD107M010R100 Capacitor, tantalum, 100
µ
F, 10 V,
100-m
Ω
, 20%
AVX D Case
C10, 11 2 GRM39X7R102K050A Capacitor, Ceramic, 1000 pF, 50 V,
10%, X7R Murata 603
C12, 13 2 10TPA33M Capacitor, POSCAP, 33
µ
F, 10 V, 20% Sanyo D Case
C8 1 GRM235Y5V106Z016A Capacitor, ceramic, 10
µ
F, 16 V,
80%–20%, Y5 V
TDK 1210
D1 – 3 3 DL4148 Diode, signal, 75 V, 200 mA Diodes, Inc. DL–35
D4 1 SML-LX2832GC-TR Diode. LED, green, 2.1 V, 25 mcd, SM Lumex 1210
D5 1 SML-LX2832RC-TR Diode. LED, red, 1.7 V, 40 mcd, SM Lumex 1210
J1, 3 2 ED1516 Terminal block, 4-pin, 6-A, 3.5 mm OST 3.5 mm
J2 1 ED1514 Terminal block, 2-pin, 6A, 3.5 mm OST 3.5 mm
JP1, 4 2 PTC36SAAN Header, single-row, straight, 3-pin,
0.100” x 25 mil Sullins 0.1”
JP2, 3,
5 – 16 14 PTC36SAAN Header, single-row, straight, 2-pin,
0.100” x 25 mil Sullins 0.1”
Shunts 16 929950-00-ND Shunt, jumper, 0.1” 3M 0.1”
Q1, 2 2 Si4410DY MOSFET, N-ch, 30-V, 10-A, 13 m
Ω
Siliconix SO–8
Q1,2 (Alt) IRF7811 MOSFET, N-ch, 30-V, 10-m
Ω
IR SO–8
R1 1 Std Resistor, chip, 4.3 k
Ω
, 1/16W, 5% 603
R2 1 Std Resistor, chip, 10 k
Ω
, 1/16W, 5% 603
R3 1 Std Resistor, chip, 5.1 k
Ω
, 1/16W, 5% 603
R4 1 Std Resistor, chip, 10 k
Ω
, 1/16W, 5% 603
R5, 7 2 Std Resistor, chip, 10
Ω
, 1/16W, 5% 603
R6, 8 2 Std Resistor, chip, 510
Ω
, 1/16W, 5% 603
R9, 10 2 Std Resistor, chip, 2.0 k
Ω
, 1/16W, 5% 603
R11, 13 2 Std Resistor, chip, 0
Ω
, 1/16W, 5% 603
R12 1 Std Resistor, chip, 3.3 k
Ω
, 1/16W, 5% 603
R14 1 Std Resistor, chip, 1.8 k
Ω
, 1/16W, 5% 603
R15 – 20 6 Resistor, chip, 33.2
Ω
, 1 W, 1% 2512
R21 – 24 4 Resistor, chip, 51.1
Ω,
1 W, 1% 2512