RF_P
C14
12 pF
C8
10 F
µ
C10
DNM
C16
100 nF
C5
10 F
µ
VDDS Decoupling Capacitors
VDDS
Pin 11
Pin 27
Pin 19
Y 1
32.768 kHz
C18
12 pF
C17
12 pF
C3
100 nF
C4
100 nF
C6
100 nF
C12
1.2 pF
VDDS
R1
100 k
VDDR
Place L1 and
C8 close to pin 18
C20
100 nF
nRESET
DIO_8
DIO_0
DIO_7
DIO_9
Pin 28
Pin 32
C9
100 nF
VDDR Decoupling Capacitors
VDDR
Y 2
24 MHz
1
2
4
3
C2
DNM
VDDS
L21
15 nH
1
2
L1
10 H
µ
1
2
DCDC_SW
C19
1 µF
50-Ω
Antenna
FL1
BLM18HE152SN1
1
2
RF_N used for RX biasing.
L21 may be removed at the
cost of 1 dB degraded
sensitivity
VDD_EB
C13
1.2 pF
L12
2 nH
1
2
CC26XX_4X4
U1
DIO_0
8
DIO_1
9
DIO_2
10
DIO_3
15
DIO_4
16
DIO_5
22
DIO_6
23
DIO_7
24
DIO_8
25
DIO_9
26
RESET_N
21
JTAG_TCKC
14
JTAG_TMSC
13
X24M_P
31
X24M_N
30
DCOUPL
12
VSS
29
VSS
3
EGP
33
VDDS
27
VDDS2
11
VDDS_DCDC
19
VDDR
28
VDDR
32
DCDC_SW
18
RX/TX
4
RF_N
RF_P
1
X32K_Q2
6
X32K_Q1
5
VSS
7
VSS
17
VSS
20
DIO_1
DIO_3/JTAG_TDO
DIO_2
DIO_6
DIO_5
DIO_4/JTAG_TDI
DCDC_SW
JTAG_TCK
nRESET
JTAG_TMS
C23
DNM
C22
DNM
X24M_N
X24M_P
2
Copyright © 2016, Texas Instruments Incorporated
Copyright © 2015–2016, Texas Instruments Incorporated
Application, Implementation, and Layout
Product Folder Links:
45
SWRS158B – FEBRUARY 2015 – REVISED JULY 2016
7.3
4 × 4 External Single-ended (4XS) Application Circuit
Figure 7-5. 4 × 4 External Single-ended (4XS) Application Circuit