STMicroelectronics STM32F042C6, Manual

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STM32F042x4 STM32F042x6 Electrical characteristics
89
6.3.11 EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•
Electrostatic discharge (ESD)
(positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB
: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in
Table 45
. They are based on the EMS levels and classes
defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Table 44. Flash memory endurance and data retention
Symbol Parameter Conditions Min
(1)
1. Data based on characterization results, not tested in production.
Unit
N
END
Endurance T
A
= –40 to +105 °C
10
kcycle
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Year 1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycle
(2)
at T
A
= 55 °C 20
Table 45. EMS characteristics
Symbol Parameter Conditions
Level/
Class
V
FESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
V
DD
= 3.3 V, LQFP48, T
A
= +25 °C,
f
HCLK
= 48 MHz,
conforming to IEC 61000-4-2
3B
V
EFTB
Fast transient voltage burst limits to be
applied through 100 pF on V
DD
and V
SS
pins to induce a functional disturbance
V
DD
= 3.3 V, LQFP48, T
A
= +25°C,
f
HCLK
= 48 MHz,
conforming to IEC 61000-4-4
4B