Electrical specifications
STA382BW
Doc ID 022783 Rev 1
3.5 Electrical
specifications for the power section
The specifications given in this section are valid for the operating conditions: V
CC
= 24 V,
f = 1 kHz, f
sw
= 384 kHz, T
amb
= 25° C and R
L
= 8
Ω
, unless otherwise specified.
Table 7.
Electrical specifications - power section
Symbol
Parameter Conditions
Min
Typ
Max
Unit
Po
Output power BTL
Digital limited
(1)
20
W
Output power SE
Digital limited
5
Output power SE R
L
= 4
Ω
Digital limited
9
R
dsON
Power Pchannel/Nchannel MOSFET
l
d
= 1.5 A
120
m
Ω
gP
Power Pchannel R
dsON
matching
l
d
= 1.5 A
95
%
gN
Power Nchannel R
dsON
matching
l
d
= 1.5 A
95
%
Idss
Power Pchannel/Nchannel leakage
V
CC
= 20 V
10
µA
I
LDT
Low current dead time (static)
Resistive load
(2)
8
15
ns
t
r
Rise time
Resistive load
10
18
ns
t
f
Fall time
Resistive load
10
18
ns
I
vcc
Supply current from Vcc in power-down PWRDN = 0
0.1
1
µA
Supply current from Vcc in operation
PCM Input signal = -60 dBfs,
Switching frequency = 384 kHz,
No LC filters
52
60
mA
Ilim
Overcurrent limit
4
5
6.5
A
UVL
Undervoltage protection
3.5
4.3
V
t
min
Output minimum pulse width
No load
20
30
60
ns
DR
Dynamic range
100
dB
SNR
Signal-to-noise ratio, ternary mode
A-weighted
100
dB
Signal-to-noise ratio binary mode
A-weighted
90
dB
THD+N
Total harmonic dist noise
FFX stereo mode, Po = 1 W,
f = 1 kHz,
0.2
%
X
TALK
Crosstalk
FFX stereo mode,
<5 kHz, one channel driven at
1 W and other channel
measured
80
dB
η
Peak efficiency, FFX mode
Po = 2 x 20 W
into 8
Ω
90
%
1.
The related THD can be defined through appropriate DRC settings (see section:
2.
Refer to
Obsolete Product(s) - Obsolete Product(s)