Obsolete Product(s) - Obsolete Product(s)
L6917B
4/33
Input Offset
FBR=1.100V to1.850V;
FBG=GND
-12
12
mV
SR
Slew Rate
VSEN=10pF
15
V/
µ
s
DIFFERENTIAL CURRENT SENSING
I
ISEN1
,
I
ISEN2
Bias Current
Iload=0
45
50
55
µ
A
I
PGNDSx
Bias Current
45
50
55
µ
A
I
ISEN1
,
I
ISEN2
Bias Current at
Over Current Threshold
80
85
90
µ
A
I
FB
Active Droop Current
Iload<0%
Iload=100%
47.5
0
50
1
52.5
µ
A
µ
A
GATE DRIVERS
t
RISE
HGATE
High Side
Rise Time
V
BOOTx
-V
PHASEx
=10V;
C
HGATEx
to PHASEx=3.3nF
15
30
ns
I
HGATEx
High Side
Source Current
V
BOOTx
-V
PHASEx
=10V 2
A
R
HGATEx
High Side
Sink Resistance
V
BOOTx
-V
PHASEx
=12V;
1.5
2
2.5
Ω
t
RISE
LGATE
Low Side
Rise Time
V
CCDR
=10V;
C
LGATEx
to PGNDx=5.6nF
30
55
ns
I
LGATEx
Low Side
Source Current
V
CCDR
=10V
1.8
A
R
LGATEx
Low Side
Sink Resistance
V
CCDR
=12V
0.7
1.1
1.5
Ω
P GOOD and OVP/UVP PROTECTIONS
PGOOD
Upper Threshold
(V
SEN
/DACOUT)
V
SEN
Rising
108
112
116
%
PGOOD
Lower Threshold
(V
SEN
/DACOUT)
V
SEN
Falling
84
88
92
%
OVP
Over Voltage Threshold
(V
SEN
)
V
SEN
Rising
2.0
2.25
V
UVP
Under Voltage Trip
(V
SEN
/DACOUT)
V
SEN
Falling
56
60
64
%
V
PGOOD
PGOOD Voltage Low
I
PGOOD
= -4mA
0.3
0.4
0.5
V
ELECTRICAL CHARACTERISTICS (continued)
V
CC
= 12V ±10%, T
J
= 0 to 70°C unless otherwise specified
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
Obsolete Product(s) - Obsolete Product(s)