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SANYO supplies high-performance GaAs switching ICs that feature the industry's smallest package size and smallest number
of external components. SANYO discrete devices have been always leading the cell phone and mobile equipment markets.
SANYO is also developing devices that support the need for higher speeds and larger data capacities for image and video data
due to the inclusion of high pixel count cameras in this equipment.

35

34

Handling More Data Even Faster. Supporting Needs for Higher Performance with
Peripheral Components

SANYO's Lineup of High-Reliability
Discrete Devices

Low noise, High gain transistors
(fT=20 GHz)

SBFP405M, SBFP420M...etc.

Low insertion loss MMIC / 
High isolation MMIC

SBS804...etc.

ECH8601, FTD2017A...etc.

VEC2301, SCH2602, ECH8603
MCH6307...etc.

TF218TH, TF208TH, TF202(SSFP)...etc.

EC3H02B, 2SC5538, 2SC5539...etc.

EC2D01B, SB0203EJ...etc.

Low phase noise transistors

EC3H02B, EC3H09B...etc.

Precise interface control MOSFETs

5LN01S, 5LP01S
MCH6614(2 in 1)...etc.

MCH5809, CPH5809(MOS + SBD)...etc.

Bipolar Transistor for LNA

Devices for Li-ion batteries

Junction FETs for ECM

Devices for CCD camera module 

Bipolar transistor for VCO

Power management switches

SPM3211, SPM3212,
SPM3215, SPM3218...etc.

 Ultralow on-resistance MOSFET series

 Ultralow on-resistance MOSFET series

Schottky barrier diodes 

Schottky barrier diodes 

Ultrathin package:  VTFP

Ultrahigh-frequency transistors

Complex devices

GaAs MMIC products for antenna 
switches and local switches

Transistors for LCD backlight circuits

Ultralow on-resistance MOS devices for power management

Low VF/IR Schottky barrier diodes for power management

Ultralow on-resistance MOS device generation map

Low and medium output MOS device development roadmap

RON 

¥

 A [m

 

¥

 mm

2

  ]

Cell density [Mcell/inch

2

 ]

RDS(on)

2.5 m

10 

µ

m

1.1 

µ

m

100

90

80

70

60

50

40

30

20

10

0

270

240

210

180

150

120

90

60

30

0

J5

T1

T2

T3

T4

T5

1998

2000

2002

2004

2005

2006

µ

m

0.8 

µ

m

µ

m

0.55 

µ

m

2.5 

µ

m

0.35 

µ

m

1.8 

µ

m

0.25 

µ

m

1.3 

µ

m

0.18 

µ

m

Cell pitch
Design rule

Low voltage
drive

VGS=4V

2.5V

1.5V

1.8V

Low V

F

/I

R

 Schottky barrier diode development roadmap

30V 1A 0.45V

30V 0.7A 0.55V

PCP

15V 1A 0.4V

CPH

Performance

New generation

4pin ECSP

1999

2000

2001

2002

2003

2004

2005

2006

2007

[Year]

[Year]

Befor

1998

15V 1A 0.4V

MCPH

15V 1A 0.4V

SCH
ECH

15V 2A 0.4V

×

2

SOP-WL

Parallel, Twin SBD
MOS + SBD
TR + SBD

Compound 

product 

deployment

RDS(on)

15 m

RDS(on)

5.3 m

RDS(on)

3.8 m

RDS(on)

2.8 m

Cell density

Low capacity
process

RDS(on)

3.2 m

RON ¥ A

V

F

 – I comparison data for earlier and low-V

F

 devices Schottky barrier diodes

2003

2004

2005

2006

2007

High 

performance

High 
performance

Miniaturization

T4: 16 million cells per 
 square inch)

Wireless package

High side switches

Miniaturization

Added functionality

Reduced on-resistance/reduced voltage drive

Multi Function

Multi Function

Differentiation

Device

Device

MOSFET

MOSFET

¥ Deployment to miniature thin-form 
   products; VEC8, SCH6, ECSP

¥ Wireless package technology
  ECH8, TSSOP-WL, FlipFET
¥ Higher power and lower cost

ExPD

¥ Built-in driver MOSFETs
¥ Trench low side
¥ Back gate switches for lithium 
  battery charging and discharging
¥ High side switches and condenser 
  microphones for cell phones

ExPD

¥ Low Side
¥ Drivers (high voltage/
  low voltage)
¥ PicoLogic

TM

SB10-015C

SBS010M

Reduced by 

0.2 V

IF-VF(Comparison with earlier SANYO products)

10

1.0

0.1

0.01

I F

 [A]

VF [V]

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Contributes to 

in end products!

Low forward voltage

Miniature thin-form 

package

New Product

Earlier Product

1st Generation

 SBD

2nd Generation

Low V

F

+ Ti barrier

3rd Generation

Low V

F

 - high-density

 sub + Ti barrier

Low I

R

 - high-density

 sub + MO barrier

Low VF - Low IR

New structure Schottky 

barrier diode

150¡C 

guaranteed

Wireless

Low VF - Low IR

Barrier metal 

inspection

¥ Trench structure (T4) -> (T5)
¥ Increased speed and further 
  improved ultralow on-resistance
¥ Reduced voltage drive 
  (from 1.5 to 1.2 V)
¥ Shorter turnaround times 
  (fewer masks)

¥ Trench structure (T3/4) deployment  
 (T3: 10 million, T4: 16 million cells per 
 square inch)
¥ Shallow trench technology established
¥ High ESD resistance technology 
  established

¥ Lineup covering 12 to 200 V
¥ Low on-resistance process 
  established (T2 trench process)

increased 
efficiency, 
miniaturization, 
and thinner 
form factors 

[Year]

R

CE

(sat) - m

1998
1999

2000
2001

2002
2003

2004
2005

2006

[Year]

Before

1997

160

140

120

100

80

60

40

20

Cell density
65Kcell/inch

2

RCE(sat)

140m

RCE(sat)

70m

RCE(sat)

50m

RCE(sat)

35m

Cell density
144cell/inch

2

Cell density
144cell/inch

2

Low resistance
of collector layer

50%

down

30%

down

30%

down

hFE=100 to 400, Width=300

hFE=200 to 560, Width=360

hFE=250 to 400, Width=150

    Very low saturation voltage
    High switching speed
    Small and high power package

    Ultra low saturation voltage
    Narrow width of hFE
    High switching speed

Ultralow saturation voltage transistor development roadmap

High 
performance

Small

Low cost

High performance

PCP

CPH

MCPH ECH SCH

2002

2003

2004

2005

2006

2007

Performance/functionality — Miniaturization

ECSP

SOP-WL

High performance

High performance

1st Generation

MBIT

2nd Generation

MBIT-II

3rd Generation

MBIT-III

4th Generation

High-speed SW 

MBIT-IV

MBIT-IIs

(Single-layer 

electrode)

High hFE support - ECSP

¤ 

package
High voltage (80 V and over) 
- High output support

PicoTR surface mounting 
package deployment
Support for hFE1 ranking

MCPH, PCP, and TP leads
Package deployment - 
Compound CPH deployment

Low saturation voltage transistor generation map

LCD backlight ultralow saturation voltage transistors

High performance/

low cost

Summary of Contents for Easy Radio IC LV24000 Series

Page 1: ... 06 04 Cell Phone Devices ...

Page 2: ...these kinds of accidents or events cannot occur Such measures include but are not limited to protective circuits and error prevention circuits for safe design redundant design and structural design In the event that any or all SANYO products including technical data services described or contained herein are controlled under any of applicable local export control laws and regulations such products...

Page 3: ...le Speaker Die Electric Filter Duplexer RGB Chip LED Battery LCD SANYO EPSON IMAGING DEVICES CORPORATION Sound Generator IC LED Driver FM Tuner IC Charge Pump Amorphous Optical Sensor Small discrete devices SANYO Group Cell Phone Components SANYO Group Cell Phone Components Here we introduce several technologies that SANYO has pushed to the limits 4 5 ...

Page 4: ...ntegrated System in Board Top surface Back surface Mounting area reduced by 80 4 45 4 45 0 65 mm3 Integrated System in Board Earlier mounting Integrated System in Board Top surface Back surface Mounting area reduced by 58 4 3 4 3 0 73 mm3 Passive components resistors and capacitors ISB Duo ISB Quad WS CSP Flip Chip 0 24 mm Application example Cell phone charger circuit block Application example Cl...

Page 5: ... 19 80 mm2 Mounting area reduced by 80 Size 109 0 mm2 19 80 mm2 Thin Form Miniature 1 or 2 Channel DC DC Converter Power Supplies SR Series Earlier mounted Integrated system in Board NTSC PAL encoder Video driver Audio codec Speaker amplifier LC822964 Video Block One output system Low cost version specialized for cell phones Supports a wide variety of input data ITU R601 SQ No output coupling capa...

Page 6: ...C823553 This model corresponds to a low price version of the LC823553 with certain functions removed and is a combined product that integrates an ultralow power MP3 decoder with a sound generator IC that supports 64 voice polyphony LC823501 Cell Phone 1 4 Type 3 2 MP CCD Camera Chipset The extensive depth of field provided by these camera modules means the user never has to worry about focus These...

Page 7: ...frared sensitivity and color 3 2M CIF CCD chipset Near infrared CCD chipset 30 fps High reliability LC99807 LC99808 LC99117 LC99268 LC99267 LC99810 LC99353 LC99812 LC99359 LC99704 LC99268G LC99809 LC99268FL Near infrared High image quality Dynamic range of VGA motion picture and 3 2 MP still picture has expanded Inproved stability at high temperature 85 C Still Motion Still Motion Motion Motion Mo...

Page 8: ...uly easy to use camera since it has a wide range from close at hand to far away over which subjects are in focus and thus it is difficult to accidentally create blurred out of focus images When used in applications such as cell phones this camera can easily take photographs such as the one shown above since the user can check a preview image while shooting Smear does not occur during still imaging...

Page 9: ...00 Source Selector Source Selector Volume Volume Head Amp FM FM Cellular Phone Basic Earlier products No external components requried SANYO Easy Radio ICTM LV24000 Including All the Functions FM function LV24020 FM AM function LV24100 FM RDS function LV24010 FM amplifier function LV24003 Not only reducing the device prices but also reducing the various costs during development Absolutely no extern...

Page 10: ...e control program I O control Frequency conversion tuning control Frequency conversion tuning control Initialize Volume adjustment and tone control program Itemized comparison of software development costs Although the first initialization is required this can correct for product sample to sample variations Cost difference Cost difference Inspection Adjustment Inspection Adjustment Software develo...

Page 11: ... equalization for the speakers used Supports karaoke and Java applications JSR135 JSR2348 Includes an MP3 and AAC decoder function The industry s lowest power consumption 8 5 mW for both MP3 and AAC Built in 8 band graphic equalizer Supply voltage internal 1 8 1 3 V I O 2 85 V Package WL CSP64 6 1 6 1 0 9 mm3 Featuring Capable of generating up to 64 voice polyphony in a full PCM sound generator co...

Page 12: ...rom DAC V_IN A GND VCC_N P_SAV_CTL VCC V_OUT 75 Ω GAIN_CTL CLAMP Video Driver Power Save LPF AMP GND CLK_OUT ND1 Low 6dB High 9dB Open 12dB Low Active High Stanby Open Stanby Cell Phone Video Drivers This IC makes it possible to display the cell phone s LCD screen contents or image data that was taken with the camera and is stored in the camera s memory on a TV video input LCD LC822961 LC822971 LC...

Page 13: ...ree Noise is reduced Higher audio quality Resistant to noise 2005 2006 2007 STDF evaluation board Integration Lower power consumption Higher functionality First generation Evaluation board verification STFD function confirmation For portable equipment For wireless equipment Second generation For business equipment For PC peripherals For portable accessories Functions STFD Volume Added functionalit...

Page 14: ... Supports brightness adjustment using an external PWM input input for each group Automatic switching between 1 and 0 5 step up modes Power saving mode Soft start function Input voltage 2 7 to 5 5 V Ultraminiature package VQFN16 4 0 4 0 0 85 mm3 This is a 4 lamp white LED driver for main LCD backlights that allows the brightness to be adjusted with an external PWM input Generates the optimal voltag...

Page 15: ...y 80 8 Efficiency 80 70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 100 Output current IOUT mA Positive step up voltage vs output current Output current IOUT mA Negative step up voltage vs output current Plus step up Minus step up IOUT 50 mA At VDD 2 9 V VPP 7 78 V At VDD 3 3 V VPP 9 03 V At VDD 3 7 V VPP 10 26 V Output voltage V OUT V Output voltage V OUT V 12 10 8 6 4 2 0 0 10 20 30 40 50 6...

Page 16: ...s diaphragm Shutter Under development New product New product New product Under development Saturated control and 1 2 phase excitation drivers 80 kΩ 60 kΩ 80 kΩ 60 kΩ 80 kΩ 60 kΩ 80 kΩ 60 kΩ Stepping motor VCC OUT1 OUT2 OUT3 OUT4 GND IN4 IN3 IN2 IN1 1 µF Control block Thermal shutdown circuit Supports an FR position detection output Low saturation voltage output Two phase excitation driver Low vol...

Page 17: ...types are connected externally The current output from the amorphous optical sensor is converted to a voltage and signal processing is applied to that voltage Normally an operational amplifier is used for linear amplification The amorphous optical sensor is connected to a resistor and the voltage is input directly to an A D converter for discrimination Transparent electrode p i n Metallic electrod...

Page 18: ...illion cells per square inch Wireless package High side switches Miniaturization Added functionality Reduced on resistance reduced voltage drive Multi Function Multi Function Differentiation Device Device MOSFET MOSFET Deployment to miniature thin form products VEC8 SCH6 ECSP Wireless package technology ECH8 TSSOP WL FlipFET Higher power and lower cost ExPD Built in driver MOSFETs Trench low side ...

Page 19: ...er software the chip and wire were shorted together 100 m MAX Gold loop and new software φ20µm Gold loop WB loop height 150 m maximum reduced to 100 m maximum SSFP SSFP VSFP VSFP VTFP VTFP Fame Fame thickness thickness 120 120 m Frame bend width 130 m Island frame thickness Reduced by 50 m Frame bending process Reduced by 80 m Total reduction 130 m Thinner island frame and improved frame bending p...

Page 20: ... MCH3411 MCPH6 270 2 1 2 0 30 Nch MCH6305 MCPH6 680 2 1 2 0 20 Pch MCH6307 MCPH6 940 2 1 2 0 12 Pch 350m 3 4 5 98m 1 15 118m 98m 66m 0 9 90m 65m 46m CPH6311 CPH6 1230 2 8 2 9 20 Pch ECH8603 ECH8 800 2 8 2 9 20 Pch Dual ECH8611 ECH8 1230 2 8 2 9 12 Pch Dual VEC2302 VEC8 510 2 8 2 9 30 Pch Dual 5 4 5 3 60m 87m 65m 42m 54m 40m 168m VEC2303 VGS 4V VGS 1 8V VEC8 940 2 8 2 9 12 Pch Dual 4 107m 75m 49m M...

Page 21: ...42 Facsimile 81 0 3 3837 6377 SANYO Electric Co Ltd Semiconductor Company Homepage URL http www semic sanyo co jp index_e htm This catalog provides information as of April 2006 Specifications and information herein are subject to change without notice Ordering Number EP92H Printed in Japan April 2006 2d OTE www global sanyo com ...

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