![Samsung S3F80P5X User Manual Download Page 283](http://html.mh-extra.com/html/samsung/s3f80p5x/s3f80p5x_user-manual_349401283.webp)
S3F80P5_UM_ REV1.00
EMBEDDED FLASH MEMORY INTERFACE
PROGRAMMING
A flash memory is programmed in one-byte unit after sector erase. The write operation of programming starts by
‘LDC’ instruction.
The program procedure in user program mode
1. Must erase target sectors before programming.
2. Set Flash Memory User Programming Enable Register (FMUSR) to “10100101B”.
3. Set Flash Memory Control Register (FMCON) to “0101000XB”.
4. Set Flash Memory Sector Address Register (FMSECH and FMSECL) to the sector base address of
destination address to write data.
5. Load a transmission data into a working register.
6. Load a flash memory upper address into upper register of pair working register.
7. Load a flash memory lower address into lower register of pair working register.
8. Load transmission data to flash memory location area on ‘LDC’ instruction by indirectly addressing mode
9. Set Flash Memory User Programming Enable Register (FMUSR) to “00000000B”.
NOTE
In programming mode, it doesn’t care whether FMCON.0’s value is “0” or “1”.
14-11
Summary of Contents for S3F80P5X
Page 10: ......
Page 14: ......
Page 48: ...ADDRESS SPACE S3F80P5_UM_ REV1 00 NOTES 2 22 ...
Page 122: ...INTERRUPT STRUCTURE S3F80P5_UM_ REV1 00 NOTES 5 18 ...
Page 210: ...INSTRUCTION SET S3F80P5_UM_ REV1 00 NOTES 6 88 ...
Page 216: ...CLOCK AND POWER CIRCUITS S3F80P5_UM_ REV1 00 NOTES 7 6 ...
Page 266: ...COUNTER A S3F80P5_UM_ REV1 00 NOTES 12 8 ...
Page 290: ...EMBEDDED FLASH MEMORY INTERFACE S3F80P5_UM_ REV1 00 NOTES 14 18 ...
Page 321: ...DEVELOPMENT TOOLS S3F80P5_UM_ REV1 00 NOTES 19 10 ...