
6. Material List
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
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6-159
Main System
Location
SEC CODE
NAME
Description
Qt'y SA/SNA
C37
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C394
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C42
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C430
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C49
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C78
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C84
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C87
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C90
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C99
2203-000438 C-CER,CHIP
1nF,10%,50V,X7R,1005
1
SNA
C13
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C16
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C236
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C27
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C28
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C29
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C41
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C48
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C483
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C486
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C506
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C74
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C75
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C76
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C79
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C80
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C86
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
C98
2203-002711 C-CER,CHIP
100nF,10%,25V,X7R,1608
1
SNA
Q11
0505-001014 FET-SILICON
SI4634DY,N,30V,24.5A,0.0052ohm,5.7W,SO-8
1
SNA
Q13
0505-001014 FET-SILICON
SI4634DY,N,30V,24.5A,0.0052ohm,5.7W,SO-8
1
SNA
Q16
0505-001014 FET-SILICON
SI4634DY,N,30V,24.5A,0.0052ohm,5.7W,SO-8
1
SNA
Q18
0505-001014 FET-SILICON
SI4634DY,N,30V,24.5A,0.0052ohm,5.7W,SO-8
1
SNA
Q31
0505-001014 FET-SILICON
SI4634DY,N,30V,24.5A,0.0052ohm,5.7W,SO-8
1
SNA
Q21
0505-002189 FET-SILICON
AP6680AGM,N,30V,12A,0.0165ohm,2.5W,SO-8
1
SNA
Q22
0505-002189 FET-SILICON
AP6680AGM,N,30V,12A,0.0165ohm,2.5W,SO-8
1
SNA
Q37
0505-002189 FET-SILICON
AP6680AGM,N,30V,12A,0.0165ohm,2.5W,SO-8
1
SNA
Q20
0505-002166 FET-SILICON
SI2307BDS,P,30V,3.2A,0.063ohm,0.8W,SOT-23
1
SNA
Q49
0505-002166 FET-SILICON
SI2307BDS,P,30V,3.2A,0.063ohm,0.8W,SOT-23
1
SNA
Q10
0505-001852 FET-SILICON
Si4686DY,N,30V,18.2A,0.0095ohm,3W,SO-8
1
SNA
Q12
0505-001852 FET-SILICON
Si4686DY,N,30V,18.2A,0.0095ohm,3W,SO-8
1
SNA
Q15
0505-001852 FET-SILICON
Si4686DY,N,30V,18.2A,0.0095ohm,3W,SO-8
1
SNA
Q17
0505-001852 FET-SILICON
Si4686DY,N,30V,18.2A,0.0095ohm,3W,SO-8
1
SNA
R90
2007-008223 R-CHIP
39.2Kohm,1%,1/10W,TP,1608
1
SNA
R114
2007-002910 R-CHIP
30.1Kohm,1%,1/10W,TP,1608
1
SNA
R89
2007-002910 R-CHIP
30.1Kohm,1%,1/10W,TP,1608
1
SNA
R39
2007-002918 R-CHIP
51.1Kohm,1%,1/10W,TP,1608
1
SNA
R487
2007-002918 R-CHIP
51.1Kohm,1%,1/10W,TP,1608
1
SNA
R493
2007-002918 R-CHIP
51.1Kohm,1%,1/10W,TP,1608
1
SNA
R88
2007-002918 R-CHIP
51.1Kohm,1%,1/10W,TP,1608
1
SNA
R197
2007-007766 R-CHIP
2Kohm,1%,1/16W,TP,1005
1
SNA
R265
2007-007766 R-CHIP
2Kohm,1%,1/16W,TP,1005
1
SNA
R87
2007-007766 R-CHIP
2Kohm,1%,1/16W,TP,1005
1
SNA
Summary of Contents for P560
Page 2: ......
Page 4: ...Contents...
Page 177: ...4 27 4 Troubleshooting This Document can not be used without Samsung s authorization...
Page 178: ...4 28 4 Troubleshooting This Document can not be used without Samsung s authorization...
Page 186: ...7 4 7 System Wire Diagram This Document can not be used without Samsung s authorization...