Panasonic Light Emitting Diodes LNJ253W82RA, Specifications

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SHD00693BEK
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: January 2009
1
Light Emitting Diodes
LNJ253W82RA
Hight Bright Surface Mounting Chip LED
SV (Side View) -0.5 Type

Absolute Maximum Ratings T
a
= 25 ° C
Parameter Symbol Rating Unit
Power dissipation P
D
55 mW
Forward current I
F
20 mA
Pulse forward current * I
FP
60 mA
Reverse voltage V
R
4 V
Operating ambient temperature T
opr
–30 to +85 ° C
Storage temperature T
stg
–40 to +100 ° C
Note) *: The condition of I
FP
is duty 10%, Pulse width 1 msec.

Electro-Optical Characteristics T
a
= 25 ° C ± 3 ° C
Parameter Symbol Conditions Min Typ Max Unit
Luminous intensity *1 I
O
I
F
= 10 mA 8.0 15.0 60.8 mcd
Reverse current I
R
V
R
= 4 V 100 µA
Forward voltage V
F
I
F
= 10 mA 1.92 2.5 V
Peak emission wavelength
λ
P
I
F
= 10 mA 645 nm
Dominant emission wavelength *2 λ
d
I
F
= 10 mA 620 630 640 nm
Spectral half band width Δλ I
F
= 10 mA 22 nm
Note) *1: Measurement tolerance: ± 20%
*2: Measurement tolerance:
±
3 nm
0
0
0
10
20
30
20 40 60 80 100
0 1.6 1.8 2.0 2.2 2.4 − 20 20 40 60 80 100
0.1
1
3
5
10
30
50
100
0.3
0.5
1
3
5
10
20 20 40 40 60 60 80 80 100 100
0
20
40
60
80
100
600 550 650 700
1 3 5 10 30 50 100
0 °
10 ° 10 °
20 ° 20 °
30 ° 30 °
40 ° 40 °
50 ° 50 °
60 ° 60 °
70 ° 70 °
80 ° 80 °
80 °
60 °
40 °
20 °
90 ° 90 °
0.1
0.5
0.3
5
3
1
10
50
30
100
I
O
 I
F
I
F
 V
F
I
F
 T
a
Directive characteristics
Relative luminous intensity (%)
Ambient temperature T
a
( ° C)
Ambient temperature T
a
( ° C)
Forward current
I
F
(mA)
Forward voltage V
F
(V) Forward current I
F
(mA)
Luminous intensity
I
O
(mcd)
Relative luminous intensity (%)
Relative luminous intensity  T
a
Relative luminous intensity  λ
P
Peak emission wavelength λ
P
(nm)
Relative luminous intensity (%)
Forward current
I
F
(mA)

Lighting Color

Red