• The user may read from the program flash memory while commands (typically
program and erase operations) are active in the data flash and FlexRAM memory
space.
• The MCU can fetch instructions from program flash during both data flash program
and erase operations and while EEPROM-backup is maintained by the EEPROM
commands.
• Conversely, the user may read from data flash and FlexRAM while program and
erase commands are executing on the program flash.
• When configured as traditional RAM, writes to the FlexRAM are allowed during
data flash operations.
Simultaneous data flash operations and FlexRAM writes, when FlexRAM is used as
EEPROM, are not possible.
Simultaneous operations are further discussed in
Allowed simultaneous flash operations
.
16.5.8 Flash Program and Erase
All flash functions except read require the user to setup and launch an FTFE command
through a series of peripheral bus writes. The user cannot initiate any further FTFE
commands until notified that the current command has completed. The FTFE command
structure and operation are detailed in
.
16.5.9 FTFE Command Operations
FTFE command operations are typically used to modify flash memory contents. The next
sections describe:
• The command write sequence used to set FTFE command parameters and launch
execution
• A description of all FTFE commands available
16.5.9.1 Command Write Sequence
FTFE commands are specified using a command write sequence illustrated in
. The FTFE module performs various checks on the command (FCCOB) content
and continues with command execution if all requirements are fulfilled.
Functional Description
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