NXP Semiconductors BGD906, Datasheet

Page: 6 / 11

2001 Nov 01 6
NXP Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200 1000
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400 600 800
MGS664
(4)
(1)
(2)
(3)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200 1000
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400 600 800
MGS665
(3)
(1)
(2)
(4)
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200 1000
−
50
−
60
−
80
−
90
−
70
52
48
40
36
44
400 600 800
MGS666
(2)
(3)
(4)
(1)
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
(1) V
o
.
(2) Typ. +3
σ
.
Z
S
= Z
L
= 75
Ω
; V
B
= 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(3) Typ.
(4) Typ.
−
3
σ
.