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2001 Nov 01

4

 

NXP Semiconductors

Product specification

860 MHz, 21.5 dB gain power doubler 
amplifier

BGD906; BGD906MI

CSO

composite second 
order distortion

49 chs flat; V

o

= 47 dBmV;  f

m

= 860.5 MHz

63

59

dB

77 chs flat; V

o

= 44 dBmV;  f

m

= 548.5 MHz

74

65

dB

110 chs flat; V

o

= 44 dBmV;  f

m

= 746.5 MHz

66

58

dB

129 chs flat; V

o

= 44 dBmV;  f

m

= 860.5 MHz

59

54

dB

110 chs; f

m

= 150 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

64

60

dB

129 chs; f

m

= 150 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

60

54

dB

d

2

second order distortion

note 3

83

70

dB

note 4

81.5

73

dB

note 5

79

76

dB

V

o

output voltage

d

im

=

60 dB; note 6

63.5

64.5

dBmV

d

im

=

60 dB; note 7

64.5

66.5

dBmV

d

im

=

60 dB; note 8

66.5

69

dBmV

CTB  compression = 1 dB;  129 chs  flat; 
f = 859.25 MHz

48.5

49

dBmV

CSO  compression = 1 dB;  129 chs  flat; 
f = 860.5 MHz

51

54

dBmV

NF

noise figure

f = 50 MHz

5

5.5

dB

f = 550 MHz

4.5

5

dB

f = 750 MHz

5

6

dB

f = 900 MHz

6

7.5

dB

I

tot

total current 
consumption (DC)

note 9

405

420

435

mA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Notes

1. Tilt = 9 dB  (50 to 550 MHz)

tilt = 3.5 dB at 

6 dB offset (550 to 750 MHz).

2. Tilt = 12.5 dB  (50 to 860 MHz).

3. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 805.25 MHz;  V

q

= 44 dBmV;

measured at f

p

+ f

q

= 860.5 MHz.

4. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 691.25 MHz;  V

q

= 44 dBmV;

measured at f

p

+ f

q

= 746.5 MHz.

5. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 493.25 MHz;  V

q

= 44 dBmV;

measured at f

p

+ f

q

= 548.5 MHz.

6. Measured according to DIN45004B:

f

p

= 851.25 MHz;  V

p

= V

o

;

f

q

= 858.25 MHz;  V

q

= V

o

6 dB;

f

r

= 860.25 MHz; V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 849.25 MHz.

7. Measured according to DIN45004B:

f

p

= 740.25 MHz;  V

p

= V

o

;

f

q

= 747.25 MHz;  V

q

= V

o

6 dB;

f

r

= 749.25 MHz;  V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 738.25 MHz.

8. Measured according to DIN45004B:

f

p

= 540.25 MHz;  V

p

= V

o

;

f

q

= 547.25 MHz;  V

q

= V

o

6 dB;

f

r

= 549.25 MHz;  V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 538.25 MHz.

9. The module normally operates at V

B

= 24 V,  but  is 

able to withstand supply transients up to 35 V.

Summary of Contents for BGD906

Page 1: ...DATA SHEET Product specification Supersedes data of 2000 Mar 28 2001 Nov 01 DISCRETE SEMICONDUCTORS BGD906 BGD906MI 860 MHz 21 5 dB gain power doubler amplifier dbook halfpage M3D252...

Page 2: ...re electrically identical only the pinning is different PINNING SOT115J PIN DESCRIPTION BGD906 BGD906MI 1 input output 2 3 common common 5 VB VB 7 8 common common 9 output input Fig 1 Simplified outli...

Page 3: ...0 MHz 20 23 dB f 320 to 550 MHz 19 22 dB f 550 to 650 MHz 18 24 dB f 650 to 750 MHz 17 23 dB f 750 to 900 MHz 16 21 dB s21 phase response f 50 MHz 45 45 deg CTB composite triple beat 49 chs flat Vo 47...

Page 4: ...0 MHz 4 5 5 dB f 750 MHz 5 6 dB f 900 MHz 6 7 5 dB Itot total current consumption DC note 9 405 420 435 mA SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Notes 1 Tilt 9 dB 50 to 550 MHz tilt 3 5 dB at 6...

Page 5: ...handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS662 1 1 3 2 4 3 2 4 Fig 3 Cross modulation as a function of frequency under tilted conditions 1 Vo 2 Typ 3 Z...

Page 6: ...860 MHz 3 Typ 4 Typ 3 handbook halfpage 0 Vo dBmV f MHz Xmod dB 200 1000 50 60 80 90 70 52 48 40 36 44 400 600 800 MGS665 3 1 2 4 Fig 6 Cross modulation as a function of frequency under tilted conditi...

Page 7: ...50 70 40 60 50 55 MGS667 3 2 1 Fig 8 Composite triple beat as a function of output voltage 1 Typ 3 2 Typ 3 Typ 3 ZS ZL 75 VB 24 V 129 chs fm 859 25 MHz handbook halfpage 40 Vo dBmV CSO dB 45 20 30 50...

Page 8: ...4 13 75 2 54 5 08 12 7 8 8 4 15 3 85 2 4 38 1 25 4 10 2 4 2 44 75 44 25 8 2 7 8 0 25 0 1 3 8 b F p 6 32 UNC y w 0 7 x S DIMENSIONS mm are the original dimensions SOT115J 0 5 10 mm scale A max D max L...

Page 9: ...n specifications and product descriptions at any time and without notice This document supersedes and replaces all information supplied prior to the publication hereof Suitability for use NXP Semicond...

Page 10: ...pyrights patents or other industrial or intellectual property rights Export control This document as well as the item s described herein may be subject to export control regulations Export might requi...

Page 11: ...document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence o...

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