2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
FEATURES
•
Excellent linearity
•
Extremely low noise
•
Excellent return loss properties
•
Silicon nitride passivation
•
Rugged construction
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
BGD906
BGD906MI
1
input
output
2, 3
common
common
5
+V
B
+V
B
7, 8
common
common
9
output
input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
7
8
9
2
3
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
21.2
21.8
dB
f = 900 MHz
22
23
dB
I
tot
total current consumption (DC)
V
B
= 24 V; T
mb
= 35
°
C
405
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
B
supply voltage
−
30
V
V
i
RF input voltage
−
70
dBmV
T
stg
storage temperature
−
40
+100
°
C
T
mb
operating mounting base temperature
−
20
+100
°
C
