2001 Nov 01
3
NXP Semiconductors
Product specification
860 MHz, 21.5 dB gain power doubler
amplifier
BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; V
B
= 24 V; T
mb
= 35
°
C; Z
S
= Z
L
= 75
Ω
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
21.2
21.5
21.8
dB
f = 900 MHz
22
22.5
23
dB
SL
slope straight line
f = 40 to 900 MHz
0.5
1
1.5
dB
FL
flatness straight line
f = 40 to 900 MHz
−
−
±
0.35
dB
s
11
input return losses
f = 40 to 80 MHz
22
25
−
dB
f = 80 to 160 MHz
21
24
−
dB
f = 160 to 320 MHz
18
23
−
dB
f = 320 to 550 MHz
17
23
−
dB
f = 550 to 900 MHz
16
20
−
dB
s
22
output return losses
f = 40 to 80 MHz
22
25
−
dB
f = 80 to 160 MHz
21
25
−
dB
f = 160 to 320 MHz
20
23
−
dB
f = 320 to 550 MHz
19
22
−
dB
f = 550 to 650 MHz
18
24
−
dB
f = 650 to 750 MHz
17
23
−
dB
f = 750 to 900 MHz
16
21
−
dB
s
21
phase response
f = 50 MHz
−
45
−
+45
deg
CTB
composite triple beat
49 chs flat; V
o
= 47 dBmV; f
m
= 859.25 MHz
−
−
68.5
−
66
dB
77 chs flat; V
o
= 44 dBmV; f
m
= 547.25 MHz
−
−
70
−
67
dB
110 chs flat; V
o
= 44 dBmV; f
m
= 745.25 MHz
−
−
63
−
61
dB
129 chs flat; V
o
= 44 dBmV; f
m
= 859.25 MHz
−
−
59
−
57
dB
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
−
−
62.5
−
60.5
dB
129 chs; f
m
= 697.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
−
−
57
−
54.5
dB
X
mod
cross modulation
49 chs flat; V
o
= 47 dBmV; f
m
= 55.25 MHz
−
−
64
−
62
dB
77 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
−
−
67.5
−
65
dB
110 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
−
−
64
−
61.5
dB
129 chs flat; V
o
= 44 dBmV; f
m
= 55.25 MHz
−
−
61
−
60
dB
110 chs; f
m
= 397.25 MHz;
V
o
= 49 dBmV at 550 MHz; note 1
−
−
60
−
58
dB
129 chs; f
m
= 859.25 MHz;
V
o
= 49.5 dBmV at 860 MHz; note 2
−
−
56.5
−
55
dB
