NSW-6
System Module SE2
PAMS Technical Documentation
Page 52
Issue 1 12/99
Nokia Mobile Phones Ltd.
Output levels
Parameter
Min
Typ/
Nom
Max
Unit
2G UHF synthesizer to Lo buffer
level
resistive load
parallel capacitance
tbd
tbd
–10
dBm
Ω
pF
1G UHF synthesizer to TX mixer
level
impedance
tbd
–5
dBm
Ω
VHF synthesizer to EROTUS
level
resistive load
parallel capacitance
100
1k
tbd
mV
pp
Ω
pF
VCTCXO 19.44 MHz
level
resistive load
parallel capacitance
600
1k
20
mV
pp
Ω
pF
VCTCXO 19.44 MHz to BB
level
resistive load
parallel capacitance
200
10k
tbd
mV
pp
Ω
pF
VCTCXO
3 * fo level
fo and 2xfo level
harmonic suppression
resistive load
parallel capacitance
50
–25
–25
5k
tbd
100
mV
pp
dBc
dBc
Ω
pF
RF/BB interface signals
CCONT (baseband) control signals are included in table below..
These
control signals are printed in italics.
Signal
name
From/
Con-
trol
To
Parameter
Min
Typ
Max
Unit
Function
VBAT
battery
RF
2V8
regul.
Voltage
3.1
3.6
5.3
V
Supply voltage for
discrete 2V8 regula-
tors in dual band
phone
Voltage during TX
3.0
3.6
5.0
V
Current
1200
mA
VREF
CCON
T
Erotus
Voltage
1.478
1.50
1.523
V
EROTUS reference
voltage
Current
10
uA
VR1
CCON
T
/
RFCEN
Erotus,
VCTCXO,
2GHz
PLL
Voltage
2.7
2.8
2.85
V
Supply for VCTCXO,
and Erotus VHF
prescaler, VCO and
bias,
2 GHz PLL