µ
PD75P3116
29
Data Sheet U11369EJ3V0DS
8.2 Program Memory Write Procedure
Program memory can be written at high speed using the following procedure.
(1)
Pull down unused pins to Vss via resistors. Set the X1 pin to low.
(2)
Supply 5 V to the V
DD
and V
PP
pins.
(3)
Wait 10
µ
s.
(4)
Select the program memory address zero-clear mode.
(5)
Supply 6 V to V
DD
and 12.5 V to V
PP
.
(6)
Write data in the 1 ms write mode.
(7)
Select the verify mode. If the data is written, go to (8) and if not, repeat (6) and (7).
(8)
Additional write. (X: Number of write operations from (6) and (7))
×
1 ms
(9)
Apply four pulses to the X1 pin to increment the program memory address by one.
(10) Repeat (6) to (9) until the end address is reached.
(11) Select the program memory address zero-clear mode.
(12) Return the V
DD
- and V
PP
-pin voltages to 5 V.
(13) Turn off the power.
The following figure shows steps (2) to (9).
V
PP
V
DD
V
DD
+ 1
V
DD
V
PP
V
DD
X1
D0/P60
to D3/P63
D4/P50 to D7/P53
Data input
Data
output
Data input
MD0/P30
MD1/P31
MD2/P32
MD3/P33
X repetitions
Write
Verify
Additional
write
Address
increment
