Device User Guide — 9S12C128DGV1/D V01.05
107
B.5.2 NVM Reliability
The reliability of the NVM blocks is guaranteed by stress test during qualification, constant process
monitors and burn-in to screen early life failures.
The failure rates for data retention and program/erase cycling are specified at
<
2ppm defects over lifetime
at the operating conditions noted.
A program/erase cycle is specified as two transitions of the cell value from erased
→
programmed
→
erased, 1
→
0
→
1.
NOTE:
All values shown in Table B-9 are target values and subject to further extensive
characterization.
Table B-9 NVM Reliability Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
1
C
Data Retention at an average junction temperature of
T
Javg
= 85
°
C
t
NVMRET
15
Years
2
C
Flash number of Program/Erase cycles
n
FLPE
10,000
Cycles
Summary of Contents for MC9S12C Series
Page 8: ...Device User Guide 9S12C128DGV1 D V01 05 8 ...
Page 14: ...Device User Guide 9S12C128DGV1 D V01 05 14 ...
Page 22: ...Device User Guide 9S12C128DGV1 D V01 05 22 ...
Page 98: ...Device User Guide 9S12C128DGV1 D V01 05 98 ...
Page 108: ...Device User Guide 9S12C128DGV1 D V01 05 108 ...
Page 116: ...Device User Guide 9S12C128DGV1 D V01 05 116 ...
Page 118: ...Device User Guide 9S12C128DGV1 D V01 05 118 ...
Page 126: ...Device User Guide 9S12C128DGV1 D V01 05 126 ...
Page 134: ...Device User Guide 9S12C128DGV1 D V01 05 134 ...
Page 135: ...Device User Guide 9S12C128DGV1 D V01 05 135 Device User Guide End Sheet ...
Page 136: ...Device User Guide 9S12C128DGV1 D V01 05 136 FINAL PAGE OF 136 PAGES ...