<Dual-In-Line Package Intelligent Power Module>
1200V Mini DIPIPM with BSD Series APPLICATION NOTE
Publication Date: September 2015
32
(2) Internal Circuit of Fo Terminal
F
O
terminal is an open drain type, it should be pulled up to a 5V supply as shown in Fig.3-1-6. Fig.3-1-8
shows the typical V-I characteristics of Fo terminal. The maximum sink current of Fo terminal is 1mA. If
opto-coupler is applied to this output, please pay attention to the opto-coupler drive ability.
Table 3-1-2 Electric characteristics of Fo terminal
Item Symbol
Condition
Min.
Typ.
Max.
Unit
Fault output voltage
V
FOH
V
SC
=0V,Fo=10k
Ω
,5V pulled-up
4.9 - - V
V
FOL
V
SC
=1V,Fo=1mA -
-
0.95
V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0
0.2
0.4
0.6
0.8
1.0
V
Fo
(V
)
I
Fo
(mA)
Fig.3-1-8 Fo terminal typical V-I characteristics (V
D
=15V, T
j
=25°C)
3.1.6 Snubber Circuit
In order to prevent DIPIPM from destruction by extra surge, the wiring length between the smoothing
capacitor and P terminal (DIPIPM) – N1 points (shunt resistor terminal) should be as short as possible. Also,
a 0.1
μ
~0.22
μ
F/630V snubber capacitor should be mounted in the DC-link and near to P, N1.
Normally there are two positions ((1) or (2)) to mount a snubber capacitor as shown in Fig.3-1-9. Snubber
capacitor should be installed in the position (2) so as to suppress surge voltage effectively. However, the
charging and discharging currents generated by the wiring inductance and the snubber capacitor will flow
through the shunt resistor, which might cause erroneous protection if this current is large enough.
In order to suppress the surge voltage maximally, the wiring at part-A (including shunt resistor parasitic
inductance) should be as small as possible. A better wiring example is shown in location (3).
Fig.3-1-9 Recommended snubber circuit location
A
DIPIPM
P
+
(2)
-
(1)
Wiring Inductance
(3)
Shunt resistor
NU
NV
NW
