
3
Rev. C
ELECTRICAL CHARACTERISTICS
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C.
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime. Absolute Maximum Ratings are those values beyond
which the life of a device may be impaired.
Note 2:
The LT8607E is guaranteed to meet performance specifications
from 0°C to 125°C junction temperature. Specifications over the –40°C
to 125°C operating junction temperature range are assured by design,
characterization, and correlation with statistical process controls. The
LT8607I is guaranteed over the full –40°C to 125°C operating junction
temperature range. The LT8607H is guaranteed over the full –40°C to
150°C operating junction temperature range. High junction temperatures
degrade operating lifetimes. Operating lifetime is derated at junction
temperatures greater than 125°C.
Note 3:
This IC includes overtemperature protection that is intended to
protect the device during overload conditions. Junction temperature will
exceed 150°C when overtemperature protection is active. Continuous
operation above the specified maximum operating junction temperature
will reduce lifetime.
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Feedback Reference Voltage
MSOP Package
V
IN
= 6V, I
LOAD
= 100mA
V
IN
= 6V, I
LOAD
= 100mA
l
0.774
0.762
0.778
0.778
0.782
0.798
V
V
DFN Package
V
IN
= 6V, I
LOAD
= 100mA
V
IN
= 6V, I
LOAD
= 100mA
l
0.771
0.753
0.778
0.778
0.785
0.803
V
V
Feedback Voltage Line Regulation
V
IN
= 4.0V to 40V
l
±0.02
±0.06
%/V
Feedback Pin Input Current
V
FB
= 1V
±20
nA
Minimum On-Time
I
LOAD
= 750mA, SYNC = 0V or LT8607 DFN
I
LOAD
= 750mA, SYNC = 1.9V or LT8607B DFN
l
l
35
35
65
60
ns
ns
Minimum Off Time
I
LOAD
= 300mA
l
93
130
ns
Oscillator Frequency
MSOP Package
R
T
= 221k, I
LOAD
= 350mA
R
T
= 60.4k, I
LOAD
= 350mA
R
T
= 18.2k, I
LOAD
= 350mA
l
l
l
155
640
1.90
200
700
2.00
245
760
2.10
kHz
kHz
MHz
DFN Package
R
T
= 221k, I
LOAD
= 350mA
R
T
= 60.4k, I
LOAD
= 350mA
R
T
= 18.2k, I
LOAD
= 350mA
l
l
l
140
610
1.85
200
700
2.00
260
790
2.15
kHz
kHz
MHz
Top Power NMOS On-Resistance
I
LOAD
= 500mA
375
mΩ
Top Power NMOS Current Limit
MSOP Package
l
1.2
1.6
2.0
A
DFN Package
l
1.2
1.7
2.2
A
Bottom Power NMOS On-Resistance
240
mΩ
SW Leakage Current
V
IN
= 36V
5
µA
EN/UV Pin Threshold
EN/UV Rising
l
0.99
1.05
1.11
V
EN/UV Pin Hysteresis
50
mV
EN/UV Pin Current
V
EN/UV
= 2V
±20
nA
PG Upper Threshold Offset from V
FB
V
FB
Rising
l
5.0
8.5
13.0
%
PG Lower Threshold Offset from V
FB
V
FB
Falling
l
5.0
8.5
13.0
%
PG Hysteresis
0.5
%
PG Leakage
V
PG
= 42V
±200
nA
PG Pull-Down Resistance
V
PG
= 0.1V
550
1200
Ω
Sync Low Input Voltage
MSOP Only
l
0.4
0.9
V
Sync High Input Voltage
INTV
CC
= 3.5V, MSOP Only
l
2.7
3.2
V
TR/SS Source Current
MSOP Only
l
1
2
3
µA
TR/SS Pull-Down Resistance
Fault Condition, TR/SS = 0.1V, MSOP Only
300
900
Ω
Spread Spectrum Modulation Frequency
V
SYNC
= 3.3V, MSOP Only
0.5
3
6
kHz