TLE4997
User’s Manual
TLE4997 Programming
User’s Manual
15
v01_01, 2019-08
Figure 3-14 Programming Flow
The following chapters give a more detailed description of individual steps of the programming flow:
EEP_OLD
EEP_NEW
EEP_PROG
EEP_OLD
EEP_NEW
EEP_PROG
For each line I from 0x10 to 0x19:
EEP_PROG[i] = (EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_NEW[i]
(as precal areas must not be changed, the bits in this areas must remain ‚0')
Readout could be looped for several
margin voltages (starting from a very
high voltage e.g. 5V) to find the margin
level of the EEPROM
see above (like complete
readout procedure for
EEP_OLD)
EEPROM
programming
INIT-CMD:
cmd=0x01
adr=0x0F
READ DATA
V
dd
= 5V
Is
0xF93D or
0xFB3D ?
ILLEGAL
STATUS:
analyse
problem
NO
CMD (write):
cmd=0x09
adr=0x21
DAT: 0x0640
(DSP, FEC,
REF off)
CMD (b read)
cmd=0x03
adc=0x10
RD. B-DATA
CMD (read)
cmd=0x01
adc=0x18
READ DATA
CMD (read)
cmd=0x01
adc=0x19
READ DATA
10x 16bit
> EEP_OLD <
Store this initial
dataset (allows
later restore)
> EEP_NEW <
Given by TC
setup and/or 2P
algorithms etc.
User input, TC
setup algorithm or
2P calibration
algorithm setup
Create erase
pattern
for
programming
2x 10x 16bit
CMD (bwrite)
cmd=0x0b
adc=0x10
WR. B-DATA
CMD (write)
cmd=0x09
adc=0x18
WR. DATA
CMD (write)
cmd=0x09
adc=0x19
WR. DATA
CMD (erase):
cmd=0x0D
adr=0x00
V
prog
PULSE
Create write
pattern
for
programming
2x 10x 16bit
CMD (write):
cmd=0x0C
adr=0x00
V
prog
PULSE
CMD(marg.):
cmd=0x0E
adr=0x00
V
marg
+V
dd
-ramp
CMDs (read)
cmd=0x03/01
adr=0x10/8/9
READ DATA
content =
EEP_NEW ?
ILLEGAL
MARGIN
READ:
analyse
problem
NO
FINISHED
margin higher
required limit ?
NO
V
dd
= 0V (off)
For each line I from 0x10 to 0x19:
EEP_PROG[i] = INVERT ((EEP_OLD[i] XOR EEP_NEW[i]) AND EEP_OLD[i])
(as precal areas must not be changed, the bits in this areas must remain ‚1')
Optionally do a last status
readout (adr. 0x0F) to check
the IF mode is still active
and the device is ok.
