Infineon TLE4997, User Manual

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TLE4997
User’s Manual
TLE4997 Programming
User’s Manual 10 v01_01, 2019-08
In order to permanently store a programmed parameter set to the EEPROM, the “EEPROM erase” and “EEPROM
write” commands shall be sent, followed by a programming pulse.
Figure 3-9 shows the timing of the programming
pulse.
Figure 3-9 Programming Pulse Timing
After programming, a margin check is necessary to test the stability of the programmed data. The margin check
is initiated by an “EEPROM margin check” command followed by a margin voltage.
Figure 3-10 Margin Check Timing
The margin voltage is varied during subsequent steps within the threshold margin level range. A too low margin
voltage value indicates a too short programming pulse duration or a too low programming voltage. A too high
margin voltage value indicates a too long programming pulse duration or a too high programming voltage.
Table 3-5 gives the electrical and timing specifications of the programming pulse and the margin voltage check
procedure.
Table 3-5 Electrical and Timing Specification of the Programming Pulse and Margin Voltage
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
OUT data input current I
O
0 – 20 mA during application of
programming pulse or margin
voltage
OUT margin level V
O,MARG
-0.1 – 7 V
Threshold margin level V
TH
2.23 – 4.5
0.4 V
V check “1”
check “0”
Margin setup time t
MARG
200 – – µs
V
DD
slope for margin V
DD
/t 5 10 150 V/µs
OUT program level V
O,PROG
19.2 19.3 19.4 V
VDD
Vout
MSB
t
H LD
LSB
t
M IN
next command
frame
t
M IN
erase or write
command frame
(buffer stays off)
V
prog
pulse
V
O ,PR OG
/t
(rise)
V
O,PR OG
/t
(fall)
t
PR OG,W R
or t
PR OG,ER
t
H LD
VDD
Vout
MSB LSB
t
MARG
next command
frame
t
min
margin
command frame
(buffer stays off)
V
dd
/t
(fall)
t
hld
apply V
O ,MARG
and
capture EEPROM data
t
min