IDT 89EBPES24T3G2, Manual

Page: 30 / 35

USE PLANE OR WIDE TRACE FOR ALL POWER NETS
NOTE:
Thu Jan 17 16:46:47 2008 SHEET 7 OF 12
1.0 18-657-000
D Huang
2008
K Leung / T Tran
SCH-00146
89EBPES24T3G2
B
W15
W16
W9
W10
R126
R125
C49
8
7
6
5
4
3
2
1
Q5
C48
R127
R124
W14
8
7
6
5
4
3
2
1
Q6
W8
R118
R117
C45
R119
C44
R116
8
7
6
5
4
3
2
1
Q2
8
7
6
5
4
3
2
1
Q1
6
6800PF
15
0.012
5%
15
HOT PLUG - MOSFETS
PMOSFET
5%
0.022UF
2%
15
P4_12VOUT
P4_12VGATE
0.012
2%
P4_3VGATE
P4_3VSENSE
5%
15
P4_3VOUT
P4_12VSENSE
12V_DS
5%
0.02
0.022UF
P2_12VOUT
2%
P2_12VGATE
2%
6800PF
P2_12VSENSE
12V_DS P2_12V
P2_3VSENSE
P2_3VGATE
PMOSFET
P2_3_3V
P2_VAUX
P2_PCIE_3_3AUX
P4_VAUX
P4_12V
P4_3_3V
0.02
P4_PCIE_3_3AUX
P2_3VOUT
6
6
6
6
6
6
6
6
6
6
6
6
6
TITLE
DRAWING NO.
AUTHOR CHECKED BY
COPYRIGHT (C) IDT
3
SIZE REV. FAB P/N
1
1
A A
B B
C C
D
D
2
2
4
4 5
6
6 7
7
8
3 8 5
6024 SILVER CREEK VALLEY RD. SAN JOSE, CA 95138
CONFIDENTIAL PROPERTY OF INTEGRATED DEVICE TECHNOLOGY, INC.
3_3V 3_3V
BI
BI
BI
NMOSFET
S
S
S
G D
D
D
D
BI
BI
BI
3_3VAUX
IN
S
S D
D
D
D
S
G
3_3VAUX
IN
BI
BI
BI
BI
BI
BI
S
S D
D
D
D
S
G
NMOSFET
S
S
S
G D
D
D
D