D E V I C E O P E R A T I O N M O D E
(T
A
= 25
°
C
±
5
°
C)
M o d e
C E
O E A 0 ~ A 1 5 V P P V D D O 0~ O 7
Read X X V
D D
5.0V D
O U T
Output Disable V
IH
V
IH
X V
D D
5.0V Hi-Z
Programming V
IL
V
IH
X V
P P
V
D D
D
IN
Program Verify X X V
P P
V
D D
D
O U T
N O T E S :
1. X = Either VIL or VIH
2. See DC Characteristics Table for VD D and VPP voltages during programming.
D C C H A R A C T E R I S T I C S
(V
SS
=0 V, T
A
= 25
°
C
±
5
°
C)
S y m b o l I t e m M i n T y p M a x U n i t Test condition
V
P P
Intelligent Programming 12.0 - 13.0 V
V
D D (1)
Intelligent Programming 5.75 - 6.25 V
I
P P (2)
V
P P
supply current 50 m A
C E = V
IL
I
D D (2)
V
D D
supply current 30 m A
V
IH
Input high voltage 0.8 V
D D
V
V
IL
Input low voltage 0.2 V
D D
V
V
O H
Output high voltage V
D D
-1.0 V I
O H
= -2.5 mA
V
O L
Output low voltage 0.4 V I
O L
= 2.1 mA
I
IL
Input leakage current 5 u A
N O T E S :
1. VD D must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. The maximum current value is with outputs O0 to O7 unloaded.
GMS81516AT EPROM PROGRAMMING HYUNDAI MicroElectronics
9