GSP665x-EVBIMS2
High Power IMS 2 Evaluation Platform
Technical Manual
_____________________________________________________________________________________________________________________
GSP665x-EVBIMS2 TM rev. 201021
© 2020 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 22
2
Test Results
2.1
Double pulse test (GSP665HPMB-E GSP66508HB-EVBIMS2)
•
Test condition: V
DS
= 400V, I
D
= 30A, V
GS
= +6V/-3V, L = 37uH, No RC Snubber, T
J
=25
℃
•
Measured peak V
DS
= 550V and 95.5V/ns peak dV/dt
•
Reliable hard switching with GS66508B is achieved at full rated current
Figure 11 Double pulse test setup
Figure 12 Double pulse test waveforms (400V/30A)
Gate
Driver
DC
Power
Source
Vdc+
Vdc-
PHA
PHB
Vdc+
PGND
I
L
V
SW
