S1C63454 TECHNICAL MANUAL
EPSON
103
CHAPTER 7: ELECTRICAL CHARACTERISTICS
7.5 Oscillation Characteristics
The oscillation characteristics change depending on the conditions (components used, board pattern,
etc.). Use the following characteristics as reference values.
OSC1 crystal oscillation circuit
Item
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∂
f/
∂
V
∂
f/
∂
IC
∂
f/
∂
C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
ppm
V
M
Ω
Max.
5
10
10
Typ.
14
20
Min.
1.8
1.8
-10
10
6.4
200
Condition
t
sta
≤
3sec (V
DD
)
t
stp
≤
10sec (V
DD
)
Including the parasitic capacitance inside the IC (in chip)
V
DD
=2.2 to 6.4V
without VDC switching
with VDC switching
C
G
=5 to 25pF
C
G
=5pF (V
DD
)
Between OSC1 and V
SS
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, f
OSC1
=32.768kHz, C
G
=25pF, C
D
=built-in, Ta=-20 to 70
°
C
OSC1 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
f
OSC1
Vsta
t
sta
Vstp
Unit
%
V
ms
V
Max.
30
3
Typ.
60kHz
Min.
-30
2.2
2.2
Condition
(V
DD
)
V
DD
=2.2 to 6.4V
(V
DD
)
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, R
CR1
=520k
Ω
, Ta=-20 to 70
°
C
OSC3 ceramic oscillation circuit
Item
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
Vsta
t
sta
Vstp
Unit
V
ms
V
Max.
5
Typ.
Min.
2.2
2.2
Condition
(V
DD
)
V
DD
=2.2 to 6.4V
(V
DD
)
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, Ceramic oscillator: 4MHz, C
GC
=C
DC
=30pF, Ta=-20 to 70
°
C
OSC3 CR oscillation circuit
Item
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
f
OSC3
Vsta
t
sta
Vstp
Unit
%
V
ms
V
Max.
25
3
Typ.
1,800kHz
Min.
-25
2.2
2.2
Condition
(V
DD
)
V
DD
=2.2 to 6.4V
(V
DD
)
Unless otherwise specified:
V
DD
=3.0V, V
SS
=0V, R
CR2
=34k
Ω
, Ta=-20 to 70
°
C
