® 8k/4k CL
6
UM 8k/4k CL – REVA – 01/13
e2v semiconductors SAS 2013
Dark Noise RMS
LSB
-
1,7
2,2
2,4
3,1
3
4
Dynamic Range
-
-
2394:1
-
-
3412:1
(*)
-
-
2730:1
(*)
-
Readout Noise
e-
-
5,7
-
-
8
-
-
10
-
Full Well Capacity
e-
-
13650
-
-
27300
-
-
27300
-
SNR
dB
-
40
-
-
43
(*)
-
-
43
(*)
-
Peak Response
(660nm)
LSB/
(nJ/cm2)
-
137
-
-
274
-
-
547
-
Non Linearity
%
-
0,3
-
-
0,3
-
-
0,3
-
Without Flat Field Correction :
FPN rms
LSB
-
0,4
1,5
-
0,7
1,5
-
0,8
1,5
FPN
pk-pk
LSB
-
3,2
15
-
5
15
-
5,6
15
PRNU hf
(3/4 Sat)
%
-
0,13
0,25
-
0,1
0,25
-
0,1
0,25
PRNU
pk-pk
(3/4 Sat)
%
-
1
3
-
0,8
3
-
0,8
3
Test conditions :
Figures in LSB are for a 12bits format.
Measured at exposure time = 50µs and line period = 50µs in Ext Trig Mode (Max Exposure Time)
Maximum data rate
Stabilized temperature 30/40/55 °C (Room/Front Face/Internal)
SNR Calculated at 75% Vsat with minimum Gain.
(*) In mode 2S/4S, only with the use of the Multi-Line Gain
