CY14E256L
Document Number: 001-06968 Rev. *F
Page 17 of 18
Document History Page
Document Title: CY14E256L 256 Kbit (32K x 8) nvSRAM
Document Number: 001-06968
Rev.
ECN No.
Submission
Date
Orig. of
Change
Description of Change
**
427789
See ECN
TUP
New data sheet
*A
437321
See ECN
TUP
Show data sheet on external Web
*B
472053
See ECN
TUP
Updated Part Numbering Nomenclature and Ordering Information
*C
503290
See ECN
PCI
Changed from “Advance” to “Preliminary”
Changed the term “Unlimited” to “Infinite”
Changed I
CC3
value from 10mA to 15mA
Removed Industrial Grade mention
Removed 35 ns speed bin
Removed I
CC1
values from the DC table for 35 ns Industrial Grade
Corrected V
IL
min specification from (V
CC
- 0.5) to (V
SS
- 0.5)
Removed all references pertaining to OE controlled Software STORE and
RECALL operation
Changed the address locations of the software STORE/RECALL com-
mand
Updated Part Nomenclature Table and Ordering Information Table
*D
1349963
See ECN
UHA/SFV
Changed from “Preliminary” to “Final.” Updated AC Test Conditions
Updated Ordering Information Table
*E
2427986
See ECN
GVCH
Move to external web
*F
2606744
02/19/09
GVCH/PYRS
Updated Feature Section
Added 35 ns access speed specs
Added CDIP package
Removed HSB ganging feature
Added footnote 5
Updates all the notes
Added Best practices
Added Industrial specs
Changed Icc3 from 15 mA to 10 mA
Added I
SB1
spec
Added parameter V
BL
Changed V
IH
test conditions from -2 and 4 to -4 and 8mA
Added footnote 6 and 7
Added t
VSBL
and V
RESET
parameter to Autostore or Power-up Recall table
Added Thermal resistance values
Changed parameter t
AS
to t
SA
Renamed t
GLAX
to t
HACE
Renamed t
RESTORE
to t
DHSB
Updated Figure 13
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