Cypress Semiconductor NoBL CY7C1460AV25, Manual

Page: 17 / 27

CY7C1460AV25
CY7C1462AV25
CY7C1464AV25
Document #: 38-05354 Rev. *D Page 17 of 27
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DD
Relative to GND........ –0.5V to +3.6V
Supply Voltage on V
DDQ
Relative to GND ...... –0.5V to +V
DD
DC to Outputs in Tri-State ................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage ....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature V
DD
V
DDQ
Commercial 0°C to +70°C 2.5V –5%/+5% 1.7V to V
DD
Industrial –40°C to +85°C
Electrical Characteristics
Over the Operating Range
[14, 15]
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 2.375 2.625 V
V
DDQ
I/O Supply Voltage for 2.5V I/O 2.375 V
DD
V
for 1.8V I/O 1.7 1.9 V
V
OH
Output HIGH Voltage for 2.5V I/O, I
OH
=
−
1.0 mA 2.0 V
for 1.8V I/O, I
OH
= –100
µ
A 1.6 V
V
OL
Output LOW Voltage for 2.5V I/O, I
OL
= 1.0 mA 0.4 V
for 1.8V I/O, I
OL
= 100
µ
A, 0.2 V
V
IH
Input HIGH Voltage
[14]
for 2.5V I/O 1.7 V
DD
+ 0.3V V
for 1.8V I/O 1.26 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[14]
for 2.5V I/O –0.3 0.7 V
for 1.8V I/O –0.3 0.36 V
I
X
Input Leakage Current
except ZZ and MODE GND
≤
V
I
≤
V
DDQ
–5 5
µ
A
Input Current of MODE Input = V
SS
–30
µ
A
Input = V
DD
5
µ
A
Input Current of ZZ Input = V
SS
–5
µ
A
Input = V
DD
30
µ
A
I
OZ
Output Leakage Current GND
≤
V
I
≤
V
DDQ,
Output Disabled –5 5
µ
A
I
DD
V
DD
Operating Supply V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4-ns cycle, 250 MHz 435 mA
5-ns cycle, 200 MHz 385 mA
6-ns cycle, 167 MHz 335 mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = f
MAX
=
1/t
CYC
All speed grades 185 mA
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
−
0.3V,
f = 0
All speed grades 120 mA
I
SB3
Automatic CE
Power-down
Current—CMOS Inputs Max. V
DD
, Device Deselected,
V
IN
≤
0.3V or V
IN
> V
DDQ
−
0.3V,
f = f
MAX
= 1/t
CYC
All speed grades 160 mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs Max. V
DD
, Device Deselected,
V
IN
≥
V
IH
or V
IN
≤
V
IL
, f = 0
All speed grades 135 mA
Notes:
14. Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC)> –2V (Pulse width less than t
CYC
/2).
15. T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
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