Cypress Semiconductor MoBL CY62157EV30, Specification Sheet

Page: 5 / 14

CY62157EV30 MoBL
®
Document #: 38-05445 Rev. *E Page 5 of 14
Thermal Resistance [10]
Parameter Description Test Conditions BGA TSOP I TSOP II Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
72 74.88 76.88
°
C/W
Θ
JC
Thermal Resistance
(Junction to Case)
8.86 8.6 13.52
°
C/W
AC Test Loads and Waveforms
Figure 1. AC Test Loads and Waveforms
Parameters 2.5V 3.0V Unit
R1 16667 1103
Ω
R2 15385 1554
Ω
R
TH
8000 645
Ω
V
TH
1.20 1.75 V
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
Equivalent to: THÉ VENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
TH
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[2]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
[9]
Data Retention Current
V
CC
= 1.5V, CE
1
> V
CC
– 0.2V,
CE
2
< 0.2V, V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Ind’l/Auto-A 2 5
µ
A
t
CDR
[10]
Chip Deselect to Data
Retention Time
0 ns
t
R
[11]
Operation Recovery Time t
RC
ns
Data Retention Waveform [12]
Figure 2. Data Retention Waveform
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC(min)
CE
1
or
V
CC
BHE.BLE
CE
2
or
Notes
11. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
µ
s or stable at V
CC(min)
> 100
µ
s.
12. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
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