Cypress Semiconductor MoBL CY62126EV30, Specification Sheet

Page: 4 / 13

MoBL
®
, CY62126EV30
Document #: 38-05486 Rev. *E Page 4 of 13
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions
VFBGA
Package
TSOP II
Package
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 4.25 x 1.125 inch,
two-layer printed circuit board
58.85 28.2 °C/W
Θ
JC
Thermal Resistance
(Junction to Case)
17.01 3.4 °C/W
Figure 3. AC Test Loads and Waveforms
Parameters 2.2V - 2.7V 2.7V - 3.6V Unit
R1 16600 1103 Ohms
R2 15400 1554 Ohms
R
TH
8000 645 Ohms
V
TH
1.2 1.75 Volts
Data Retention Characteristics
Over the Operating Range
Parameter Description Conditions Min Typ
[1]
Max Unit
V
DR
V
CC
for Data Retention 1.5 V
I
CCDR
[7]
Data Retention Current V
CC
= V
DR
, CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V
Industrial 3
μ
A
Automotive 30
μ
A
t
CDR
[8]
Chip Deselect to Data
Retention Time
0 ns
t
R
[9]
Operation Recovery Time t
RC
ns
Figure 4. Data Retention Waveform
V
CC
V
CC
OUTPUT
R2
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
Rise Time = 1 V/ns
Fall Time = 1 V/ns
OUTPUT V
TH
Equivalent to: THÉVENIN EQUIVALENT
ALL INPUT PULSES
R
TH
R1
V
CC(min)
V
CC(min)
t
CDR
V
DR
> 1.5V
DATA RETENTION MODE
t
R
V
CC
CE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V
CC
ramp from V
DR
to V
CC(min)
> 100
μ
s.
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