Cypress Semiconductor MoBL CY62126EV30, Specification Sheet

Page: 3 / 13

MoBL
®
, CY62126EV30
Document #: 38-05486 Rev. *E Page 3 of 13
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential................................. –0.3V to 3.6V (V
CCmax
+ 0.3V)
DC Voltage Applied to Outputs
in High-Z State
[4, 5]
................ –0.3V to 3.6V (V
CCmax
+ 0.3V)
DC Input Voltage
[4, 5]
...............−
0.3V to 3.6V (V
CCmax
+ 0.3V)
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current.................................................... > 200 mA
Operating Range
Device Range
Ambient
Temperature
V
CC
[6]
CY62126EV30LL Industrial –40°C to +85°C 2.2V to
3.6V
Automotive –40°C to +125°C
Electrical Characteristics
(Over the Operating Range)
Parameter Description Test Conditions
45 ns (Industrial) 55 ns (Automotive)
Unit
Min Typ
[1]
Max Min Typ
[1]
Max
V
OH
Output HIGH Voltage I
OH
= –0.1 mA 2.0 2.0 V
I
OH
= –1.0 mA, V
CC
> 2.70V 2.4 2.4 V
V
OL
Output LOW Voltage I
OL
= 0.1 mA 0.4 0.4 V
I
OL
= 2.1mA, V
CC
> 2.70V 0.4 0.4 V
V
IH
Input HIGH Voltage V
CC
= 2.2V to 2.7V 1.8 V
CC
+ 0.3 1.8 V
CC
+ 0.3 V
V
CC
= 2.7V to 3.6V 2.2 V
CC
+ 0.3 2.2 V
CC
+ 0.3 V
V
IL
Input LOW
Voltage
V
CC
= 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V
V
CC
= 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V
I
IX
Input Leakage Current GND < V
I
< V
CC
–1 +1 –4 +4
μ
A
I
OZ
Output Leakage
Current
GND < V
O
< V
CC
, Output
Disabled
–1 +1 –4 +4
μ
A
I
CC
V
CC
Operating Supply
Current
f = f
max
= 1/t
RC
V
CC
= V
CCmax
I
OUT
= 0 mA
CMOS levels
11 16 11 35 mA
f = 1 MHz 1.3 2.0 1.3 4.0
I
SB1
Automatic CE Power
down Current
—CMOS Inputs
CE > V
CC
−
0.2V,
V
IN
> V
CC
– 0.2V, V
IN
< 0.2V)
f = f
max
(Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
V
CC
= 3.60V
1 4 1 35
μ
A
I
SB2
[7]
Automatic CE Power
down Current
—CMOS Inputs
CE > V
CC
– 0.2V,
V
IN
> V
CC
– 0.2V or V
IN
< 0.2V,
f = 0, V
CC
= 3.60V
1 4 1 30
μ
A
Capacitance
For all packages. Tested initially and after any design or process changes that may affect these parameters.
Parameter Description Test Conditions Max Unit
C
IN
Input Capacitance T
A
= 25°C, f = 1 MHz, V
CC
= V
CC(typ)
10 pF
C
OUT
Output Capacitance 10 pF
Notes
4. V
IL(min)
= –2.0V for pulse durations less than 20 ns.
5. V
IH(max)
= V
CC
+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a 100
μ
s ramp time from 0 to V
cc
(min) and 200
μ
s wait time after V
cc
stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
[+] Feedback