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CY7C1338G

Document #: 38-05521 Rev. *D

Page 5 of 17

Single Write Accesses Initiated by ADSP

This access is initiated when the following conditions are
satisfied at clock rise: (1) CE

1

, CE

2

, CE

3

 are all asserted

active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BW[

A:D

])are ignored during this first

clock cycle. If the write inputs are asserted active (see Write
Cycle Descriptions table for appropriate states that indicate a
write) on the next clock rise, the appropriate data will be
latched and written into the device. Byte writes are allowed.
During byte writes, BW

A

 controls DQ

A

 and BWB controls DQ

B

.

BWC controls DQ

C

, and BW

D

 controls DQ

D

. All I/Os are

tri-stated during a byte write.Since this is a common I/O
device, the asynchronous OE input signal must be deasserted
and the I/Os must be tri-stated prior to the presentation of data
to DQs. As a safety precaution, the data lines are tri-stated
once a write cycle is detected, regardless of the state of OE.

Single Write Accesses Initiated by ADSC

This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE

1

, CE

2

, and CE

3

 are all asserted

active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the write input signals (GW, BWE, and BW

[A:D]

)

indicate a write access. ADSC is ignored if ADSP is active
LOW.

The addresses presented are loaded into the address register
and the burst counter/control logic and delivered to the
memory core. The information presented to DQ

[A:D]

 will be

written into the specified address location. Byte writes are
allowed. During byte writes, BW

A

 controls DQ

A

, BW

B

 controls

DQ

B

, BW

controls DQ

C

, and BW

D

 controls DQ

D

. All I/Os are

tri-stated when a write is detected, even a byte write. Since this
is a common I/O device, the asynchronous OE input signal
must be deasserted and the I/Os must be tri-stated prior to the
presentation of data to DQs. As a safety precaution, the data
lines are tri-stated once a write cycle is detected, regardless
of the state of OE.

Burst Sequences

The CY7C1338G provides an on-chip two-bit wraparound
burst counter inside the SRAM. The burst counter is fed by

A[1:0], and can follow either a linear or interleaved burst order.
The burst order is determined by the state of the MODE input.
A LOW on MODE will select a linear burst sequence. A HIGH
on MODE will select an interleaved burst order. Leaving
MODE unconnected will cause the device to default to a inter-
leaved burst sequence.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CEs, ADSP, and ADSC must remain
inactive for the duration of t

ZZREC

 after the ZZ input returns

LOW.   

Interleaved Burst Address Table 
(MODE = Floating or V

DD

)

First 

Address

A1, A0

Second

Address

A1, A0

Third

Address

A1, A0

Fourth

Address

A1, A0

00

01

10

11

01

00

11

10

10

11

00

01

11

10

01

00

Linear Burst Address Table (MODE = GND)

First

Address

A

1

,

 

A

0

Second

Address

A

1

,

 

A

0

Third

Address

A

1

,

 

A

0

Fourth

Address

A

1

,

 

A

0

00

01

10

11

01

10

11

00

10

11

00

01

11

00

01

10

ZZ Mode Electrical Characteristics

Parameter

Description

Test Conditions

Min.

Max.

Unit

I

DDZZ

Sleep mode standby current

ZZ > V

DD

 

– 0.2V

40

mA

t

ZZS

Device operation to ZZ

ZZ > V

DD

 – 0.2V

2t

CYC

ns

t

ZZREC

ZZ recovery time

ZZ < 0.2V

2t

CYC

ns

t

ZZI

ZZ active to sleep current

This parameter is sampled

2t

CYC

ns

t

RZZI

ZZ Inactive to exit sleep current

This parameter is sampled

0

ns

Summary of Contents for CY7C1338G

Page 1: ...SC ADSP and ADV Write Enables BW A D and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1338G allows either interleaved or linear burst sequences selec...

Page 2: ...VSSQ VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK G...

Page 3: ...put Synchronous Chip Enable 2 Input active HIGH Sampled on the rising edge of CLK Used in conjunction with CE1 and CE3 to select deselect the device CE2 is sampled only when a new external address is...

Page 4: ...f CE1 is HIGH ADSP Input Synchronous Address Strobe from Processor sampled on the rising edge of CLK active LOW When asserted LOW addresses presented to the device are captured in the address register...

Page 5: ...ince this is a common I O device the asynchronous OE input signal must be deasserted and the I Os must be tri stated prior to the presentation of data to DQs As a safety precaution the data lines are...

Page 6: ...Burst Next H X X L X H L L X L H D Read Cycle Suspend Burst Current X X X L H H H H L L H Q Read Cycle Suspend Burst Current X X X L H H H H H L H Tri State Read Cycle Suspend Burst Current H X X L X...

Page 7: ...rite Bytes C B H L H L L H Write Bytes C B A H L H L L L Write Byte D H L L H H H Write Bytes D A H L L H H L Write Bytes D B H L L H L H Write Bytes D B A H L L H L L Write Bytes D B H L L L H H Writ...

Page 8: ...I O 1 7 VDD 0 3V V VIL Input LOW Voltage 8 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Current of MODE Input VSS 30 A Input VDD 5...

Page 9: ...Test conditions follow standard test methods and procedures for measuringthermalimpedance per EIA JESD51 30 32 34 1 C W JC Thermal Resistance Junction to Case 6 85 14 0 C W AC Test Loads and Waveform...

Page 10: ...0 5 0 5 ns tADH ADSP ADSC Hold After CLK Rise 0 5 0 5 ns tWEH GW BWE BWX Hold After CLK Rise 0 5 0 5 ns tADVH ADV Hold After CLK Rise 0 5 0 5 ns tDH Data Input Hold After CLK Rise 0 5 0 5 ns tCEH Chi...

Page 11: ...H or CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its ini...

Page 12: ...ADDRESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS...

Page 13: ...nitiated by ADSP or ADSC 20 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1...

Page 14: ...ed when entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 22 DQs are in high Z when exiting ZZ sleep mode Timing Diagrams continued tZZ I SUPPLY C...

Page 15: ...Pack 14 x 20 x 1 4 mm Lead Free Commercial CY7C1338G 100BGC 51 85115 119 ball Ball Grid Array 14 x 22 x 2 4 mm CY7C1338G 100BGXC 119 ball Ball Grid Array 14 x 22 x 2 4 mm Lead Free CY7C1338G 100AXI 51...

Page 16: ...here a malfunction or failure may reasonably be expected to result in significant injury to the user The inclusion of Cypress products in life support systems application implies that the manufacturer...

Page 17: ...l Resistance table Removed comment on the availability of BG lead free package Updated the Ordering Information by shading and unshading MPNs as per availability C 418633 See ECN RXU Converted from Pr...

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