background image

 

CY7C1324H

Document #: 001-00208 Rev. *B

Page 4 of 15

Functional Overview

All synchronous inputs pass through input registers controlled
by the rising edge of the clock. Maximum access delay from
the clock rise (t

CDV

) is 6.5 ns (133-MHz device). 

The CY7C1324H supports secondary cache in systems
utilizing either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486™
processors. The linear burst sequence is suited for processors
that utilize a linear burst sequence. The burst order is
user-selectable, and is determined by sampling the MODE
input. Accesses can be initiated with either the Processor
Address Strobe (ADSP) or the Controller Address Strobe
(ADSC). Address advancement through the burst sequence is
controlled by the ADV input. A two-bit on-chip wraparound
burst counter captures the first address in a burst sequence
and automatically increments the address for the rest of the
burst access.

Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BW

[A:B]

) inputs. A Global Write

Enable (GW) overrides all byte write inputs and writes data to
all four bytes. All writes are simplified with on-chip
synchronous self-timed write circuitry.

Three synchronous Chip Selects (CE

1

, CE

2

, CE

3

) and an

asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. ADSP is ignored if CE

1

is HIGH.

Single Read Accesses

A single read access is initiated when the following conditions
are satisfied at clock rise: (1) CE

1

, CE

2

, and CE

3

 are all

asserted active, and (2) ADSP or ADSC is asserted LOW (if
the access is initiated by ADSC, the write inputs must be
deasserted during this first cycle). The address presented to
the address inputs is latched into the address register and the
burst counter/control logic and presented to the memory core.
If the OE input is asserted LOW, the requested data will be
available at the data outputs a maximum to t

CDV

 after clock

rise. ADSP is ignored if CE

1

 is HIGH.

Single Write Accesses Initiated by ADSP

This access is initiated when the following conditions are
satisfied at clock rise: (1) CE

1

, CE

2

, CE

3

 are all asserted

active, and (2) ADSP is asserted LOW. The addresses
presented are loaded into the address register and the burst
inputs (GW, BWE, and BW

[A:B]

) are ignored during this first

clock cycle. If the write inputs are asserted active (see Write
Cycle Descriptions table for appropriate states that indicate a
Write) on the next clock rise, the appropriate data will be
latched and written into the device. Byte Writes are allowed.
During Byte Writes, BWA controls DQA and BWB controls
DQB. All I/Os are tri-stated during a Byte Write. Since this is a
common I/O device, the asynchronous OE input signal must
be deasserted and the I/Os must be tri-stated prior to the
presentation of data to DQs. As a safety precaution, the data
lines are tri-stated once a write cycle is detected, regardless
of the state of OE.

Single Write Accesses Initiated by ADSC

This write access is initiated when the following conditions are
satisfied at clock rise: (1) CE

1

, CE

2

, and CE

3

 are all asserted

active, (2) ADSC is asserted LOW, (3) ADSP is deasserted
HIGH, and (4) the write input signals (GW, BWE, and BW[A:B])
indicate a write access. ADSC is ignored if ADSP is active
LOW.

The addresses presented are loaded into the address register
and the burst counter/control logic and delivered to the
memory core. The information presented to DQ[A:D] will be
written into the specified address location. Byte Writes are
allowed. During Byte Writes, BWA controls DQA and BWB
controls DQB. All I/Os are tri-stated when a Write is detected,
even a Byte Write. Since this is a common I/O device, the
asynchronous OE input signal must be deasserted and the
I/Os must be tri-stated prior to the presentation of data to DQs.
As a safety precaution, the data lines are tri-stated once a
Write cycle is detected, regardless of the state of OE.

Burst Sequences

The CY7C1324H provides an on-chip two-bit wraparound
burst counter inside the SRAM. The burst counter is fed by
A

[1:0]

, and can follow either a linear or interleaved burst order.

The burst order is determined by the state of the MODE input.
A LOW on MODE will select a linear burst sequence. A HIGH
on MODE will select an interleaved burst order. Leaving
MODE unconnected will cause the device to default to an
interleaved burst sequence.

Sleep Mode

The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CEs, ADSP, and ADSC must remain
inactive for the duration of t

ZZREC

 after the ZZ input returns

LOW. 

  

Interleaved Burst Address Table 
(MODE = Floating or V

DD

)

First 

Address

A1, A0

Second

Address

A1, A0

Third

Address

A1, A0

Fourth

Address

A1, A0

00

01

10

11

01

00

11

10

10

11

00

01

11

10

01

00

Linear Burst Address Table (MODE = GND)

First

Address

A

1

,

 

A

0

Second

Address

A

1

,

 

A

0

Third

Address

A

1

,

 

A

0

Fourth

Address

A

1

,

 

A

0

00

01

10

11

01

10

11

00

10

11

00

01

11

00

01

10

[+] Feedback 

Summary of Contents for CY7C1324H

Page 1: ...Burst Control inputs ADSC ADSP and ADV Write Enables BW A B and BWE and Global Write GW Asynchronous inputs include the Output Enable OE and the ZZ pin The CY7C1324H allows either interleaved or linea...

Page 2: ...C VSS VDDQ NC NC NC NC NC NC VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB NC VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC A A CE 1 CE 2 NC NC BW B BW A CE 3 V DD V SS CLK GW BWE OE ADSP A...

Page 3: ...le when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK When asserted it automatically increments the address in a burst cycle ADSP Input...

Page 4: ...ce Byte Writes are allowed During Byte Writes BWA controls DQA and BWB controls DQB All I Os are tri stated during a Byte Write Since this is a common I O device the asynchronous OE input signal must...

Page 5: ...ontinue Burst Next H X X L X H L H L L H Q Read Cycle Continue Burst Next H X X L X H L H H L H Tri State Write Cycle Continue Burst Next X X X L H H L L X L H D Write Cycle Continue Burst Next H X X...

Page 6: ...001 00208 Rev B Page 6 of 15 Truth Table for Read Write 2 3 Function GW BWE BWB BWA Read H H X X Read H L H H Write Byte A DQPA H L H L Write Byte B DQPB H L L H Write All Bytes H L L L Write All Byte...

Page 7: ...Voltage for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V VIL Input LOW Voltage 6 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input Cu...

Page 8: ...llow standard test methods and proce dures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Notes 8 Tested initially...

Page 9: ...CLK Rise 0 5 ns tWEH GW BWE BW A B Hold after CLK Rise 0 5 ns tADVH ADV Hold after CLK Rise 0 5 ns tDH Data Input Hold after CLK Rise 0 5 ns tCEH Chip Enable Hold after CLK Rise 0 5 ns Notes 9 Timing...

Page 10: ...CE2 is LOW or CE3 is HIGH tCYC tCL CLK tADH tADS ADDRESS t CH tAH tAS A1 tCEH tCES Data Out Q High Z tCLZ tDOH tCDV tOEHZ tCDV Single READ BURST READ tOEV tOELZ tCHZ Burst wraps around to its initial...

Page 11: ...ESS t CH tAH tAS A1 tCEH tCES High Z BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Extended BURST WRITE D A2 2 Single WRITE tADH tADS tADH tADS t OEHZ tADVH tADVS tWEH...

Page 12: ...cle is performed 18 GW is HIGH Timing Diagrams continued tCYC t CL CLK tADH tADS ADDRESS t CH tAH tAS A2 tCEH tCES Single WRITE D A3 A3 A4 BURST READ Back to Back READs High Z Q A2 Q A4 Q A4 1 Q A4 2...

Page 13: ...n entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 20 DQs are in High Z when exiting ZZ sleep mode Timing Diagrams continued t ZZ I SUPPLY CLK ZZ...

Page 14: ...a trademark of Intel Corporation All product and company names mentioned in this document may be the trademarks of their respective holders Ordering Information Not all of the speed package and tempe...

Page 15: ...r Corporation on Page 1 from 3901 North First Street to 198 Champion Court Removed 100 MHz Speed bin Changed Three State to Tri State Modified Input Load to Input Leakage Current except ZZ and MODE in...

Reviews: