background image

CY7C1215H

Document #: 38-05666 Rev. *B

Page 9 of 15

Switching Characteristics 

Over the Operating Range

[10, 11]

Parameter

Description

166 MHz

133 MHz

Unit

Min.

Max

Min.

Max

t

POWER

V

DD

(Typical) to the First Access

[12]

1

1

ms

Clock

t

CYC

Clock Cycle Time

6.0

7.5

ns

t

CH

Clock HIGH

2.5

3.0

ns

t

CL

Clock LOW

2.5

3.0

ns

Output Times

t

CO

Data Output Valid after CLK Rise

3.5

4.0

ns

t

DOH

Data Output Hold after CLK Rise

1.5

1.5

ns

t

CLZ

Clock to Low-Z

[13, 14, 15]

0

0

ns

t

CHZ

Clock to High-Z

[13, 14, 15]

3.5

4.0

ns

t

OEV

OE LOW to Output Valid

3.5

4.5

ns

t

OELZ

OE LOW to Output Low-Z

[13, 14, 15]

0

0

ns

t

OEHZ

OE HIGH to Output High-Z

[13, 14, 15]

3.5

4.0

ns

Set-up Times

t

AS

Address Set-up before CLK Rise

1.5

1.5

ns

t

ADS

ADSC, ADSP Set-up before CLK Rise

1.5

1.5

ns

t

ADVS

ADV Set-up before CLK Rise

1.5

1.5

ns

t

WES

GW, BWE, BW

[A:D]

 Set-up before CLK Rise

1.5

1.5

ns

t

DS

Data Input Set-up before CLK Rise

1.5

1.5

ns

t

CES

Chip Enable Set-Up before CLK Rise

1.5

1.5

ns

Hold Times

t

AH

Address Hold after CLK Rise

0.5

0.5

ns

t

ADH

ADSP, ADSC Hold after CLK Rise

0.5

0.5

ns

t

ADVH

ADV Hold after CLK Rise

0.5

0.5

ns

t

WEH

GW, BWE, BW

[A:D]

 Hold after CLK Rise

0.5

0.5

ns

t

DH

Data Input Hold after CLK Rise

0.5

0.5

ns

t

CEH

Chip Enable Hold after CLK Rise

0.5

0.5

ns

Notes: 

10. Timing reference level is 1.5V when V

DDQ

 = 3.3V and is 1.25 when V

DDQ

 = 2.5V.

11. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
12. This part has a voltage regulator internally; t

POWER

 is the time that the power needs to be supplied above V

DD

(minimum) initially before a Read or Write operation 

can be initiated.

13. t

CHZ

, t

CLZ

,t

OELZ

, and t

OEHZ

 are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

14. At any given voltage and temperature, t

OEHZ

 is less than t

OELZ

 and t

CHZ

 is less than t

CLZ

 to eliminate bus contention between SRAMs when sharing the same 

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed 
to achieve High-Z prior to Low-Z under the same system conditions.

15. This parameter is sampled and not 100% tested.

[+] Feedback 

Summary of Contents for CY7C1215H

Page 1: ...nous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC ar...

Page 2: ...Q VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK GW BW...

Page 3: ...as input data pins OE is masked during the first clock of a Read cycle when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW Wh...

Page 4: ...esented to the DQ inputs is written into the corre sponding address location in the memory array If GW is HIGH then the Write operation is controlled by BWE and BW A D signals The CY7C1215H provides B...

Page 5: ...ad Continue Read Next L H X X X H L H Tri State Read Continue Read Next L H X X X H L L DQ Read Suspend Read Current L X X X H H H H Tri State Read Suspend Read Current L X X X H H H L DQ Read Suspend...

Page 6: ...te Byte A DQA H L H H H L Write Byte B DQB H L H H L H Write Bytes B A H L H H L L Write Byte C DQC H L H L H H Write Bytes C A H L H L H L Write Bytes C B H L H L L H Write Bytes C B A H L H L L L Wr...

Page 7: ...ge 7 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input C...

Page 8: ...llow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially a...

Page 9: ...se 0 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCE...

Page 10: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Page 11: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Page 12: ...e is performed 19 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6...

Page 13: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 21 DQs are in High Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Page 14: ...ed trademark of IBM Corporation All product and company names mentioned in this document may be trademarks of their respective holders Ordering Information Not all of the speed package and temperature...

Page 15: ...poration on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Inp...

Reviews: