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CY7C1215H

Document #: 38-05666 Rev. *B

Page 3 of 15

Pin Definitions 

Name

I/O

Description

A

0

, A

1

, A

Input-

Synchronous

Address Inputs used to select one of the 32K address locations

. Sampled at the rising edge 

of the CLK if ADSP or ADSC is active LOW, and CE

1

, CE

2

, and CE

3

 are sampled active. A

1

, A

0

 

feed the 2-bit counter.

BW

A

,

 

BW

BW

C

,

 

BW

D

Input-

Synchronous

Byte Write Select Inputs, active LOW

. Qualified with BWE to conduct Byte Writes to the SRAM. 

Sampled on the rising edge of CLK.

GW

Input-

Synchronous

Global Write Enable Input, active LOW

. When asserted LOW on the rising edge of CLK, a global 

Write is conducted (ALL bytes are written, regardless of the values on BW

[A:D]

 and BWE).

BWE

Input-

Synchronous

Byte Write Enable Input, active LOW

. Sampled on the rising edge of CLK. This signal must be 

asserted LOW to conduct a byte write.

CLK

Input-
Clock

Clock Input

. Used to capture all synchronous inputs to the device. Also used to increment the 

burst counter when ADV is asserted LOW, during a burst operation.

CE

1

Input-

Synchronous

Chip Enable 1 Input, active LOW

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

2

 and CE

3

 to select/deselect the device. ADSP is ignored if CE

1

 is HIGH. CE

1

 is sampled only 

when a new external address is loaded.

CE

2

Input-

Synchronous

Chip Enable 2 Input, active HIGH

. Sampled on the rising edge of CLK. Used in conjunction with 

CE

1

 and CE

3

 to select/deselect the device. CE

2

 is sampled only when a new external address is 

loaded.

CE

3

Input-

Synchronous

Chip Enable 3 Input

, active LOW. Sampled on the rising edge of CLK. Used in conjunction with 

CE

and

 

CE

2

 to select/deselect the device. Not connected for BGA. Where referenced, CE

3

 is 

assumed active throughout this document for BGA. CE

3

 is sampled only when a new external 

address is loaded.

OE

Input-

Asynchronous

Output Enable, asynchronous input, active LOW

. Controls the direction of the I/O pins. When 

LOW, the I/O pins behave as outputs. When deasserted HIGH, I/O pins are tri-stated, and act as 
input data pins. OE is masked during the first clock of a Read cycle when emerging from a 
deselected state. 

ADV

Input-

Synchronous

Advance Input signal, sampled on the rising edge of CLK

active LOW

. When asserted, it 

automatically increments the address in a burst cycle.

ADSP

Input-

Synchronous

Address Strobe from Processor, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, A is captured in the address registers. A

1

, A

0

 are also loaded into the burst counter. 

When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is ignored when CE

1

 

is deasserted HIGH.

ADSC

Input-

Synchronous

Address Strobe from Controller, sampled on the rising edge of CLK, active LOW

. When 

asserted LOW, A is captured in the address registers. A

1

, A

0

 are also loaded into the burst counter. 

When ADSP and ADSC are both asserted, only ADSP is recognized.

ZZ

Input-

Asynchronous

ZZ “Sleep” Input, active HIGH

. This input, when HIGH places the device in a non-time-critical 

“sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or 
left floating. ZZ pin has an internal pull-down.

DQs

I/O-

Synchronous

Bidirectional Data I/O line

s. As inputs, they feed into an on-chip data register that is triggered 

by the rising edge of CLK. As outputs, they deliver the data contained in the memory location 
specified by “A” during the previous clock rise of the Read cycle. The direction of the pins is 
controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQ are 
placed in a tri-state condition.

V

DD

Power Supply

Power supply inputs to the core of the device

V

SS

Ground

Ground for the core of the device

V

DDQ

I/O Power 

Supply

Power supply for the I/O circuitry

V

SSQ

I/O Ground

Ground for the I/O circuitry

MODE

Input-

Static

Selects Burst Order

. When tied to GND selects linear burst sequence. When tied to V

DD

 or left 

floating selects interleaved burst sequence. This is a strap pin and should remain static during 
device operation. Mode Pin has an internal pull-up.

NC

No Connects

. Not internally connected to the die. 2M, 4M, 9M, 18M, 72M, 144M, 288M, 576M

and 1G are address expansion pins and are not internally connected to the die.

[+] Feedback 

Summary of Contents for CY7C1215H

Page 1: ...nous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC ar...

Page 2: ...Q VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK GW BW...

Page 3: ...as input data pins OE is masked during the first clock of a Read cycle when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW Wh...

Page 4: ...esented to the DQ inputs is written into the corre sponding address location in the memory array If GW is HIGH then the Write operation is controlled by BWE and BW A D signals The CY7C1215H provides B...

Page 5: ...ad Continue Read Next L H X X X H L H Tri State Read Continue Read Next L H X X X H L L DQ Read Suspend Read Current L X X X H H H H Tri State Read Suspend Read Current L X X X H H H L DQ Read Suspend...

Page 6: ...te Byte A DQA H L H H H L Write Byte B DQB H L H H L H Write Bytes B A H L H H L L Write Byte C DQC H L H L H H Write Bytes C A H L H L H L Write Bytes C B H L H L L H Write Bytes C B A H L H L L L Wr...

Page 7: ...ge 7 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input C...

Page 8: ...llow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially a...

Page 9: ...se 0 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCE...

Page 10: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Page 11: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Page 12: ...e is performed 19 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6...

Page 13: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 21 DQs are in High Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Page 14: ...ed trademark of IBM Corporation All product and company names mentioned in this document may be trademarks of their respective holders Ordering Information Not all of the speed package and temperature...

Page 15: ...poration on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Inp...

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