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1-Mbit (32K x 32) Pipelined Sync SRAM

CY7C1215H

Cypress Semiconductor Corporation

198 Champion Court

San Jose

,

CA 95134-1709

408-943-2600

Document #: 38-05666 Rev. *B

 Revised July 5, 2006

Features

• Registered inputs and outputs for pipelined operation

• 32K × 32 common I/O architecture 

• 3.3V core power supply (V

DD

)

• 2.5V/3.3V I/O power supply (V

DDQ

)

• Fast clock-to-output times 

— 3.5 ns (for 166-MHz device)

• Provide high-performance 3-1-1-1 access rate

• User-selectable burst counter supporting Intel

®

 

Pentium

®

 interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self-timed write

• Asynchronous output enable

• Offered in JEDEC-standard lead-free 100-pin TQFP 

package 

• “ZZ” Sleep Mode Option

Functional Description

[1]

The CY7C1215H SRAM integrates 32K x 32 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE

1

), depth-expansion Chip Enables (CE

2

 and CE

3

), Burst

Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW

[A:D]

, and BWE), and Global Write (GW). Asynchronous

inputs include the Output Enable (OE) and the ZZ pin.

Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written. 

The CY7C1215H operates from a +3.3V core power supply
while all outputs may operate either with a + 2.5V or +3.3V
supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.

Note: 

1. For best-practices recommendations, please refer to the Cypress application note 

System Design Guidelines 

on www.cypress.com.

Logic Block Diagram

ADDRESS
REGISTER

ADV

CLK

BURST

COUNTER 

AND

LOGIC

CLR

Q1

Q0

ADSP

ADSC

MODE

BWE

GW

CE

1

CE

2

CE

3

OE

ENABLE

REGISTER

OUTPUT

REGISTERS

SENSE

AMPS

OUTPUT

BUFFERS

E

PIPELINED

ENABLE

INPUT

REGISTERS

A0, A1, A

BW

B

BW

C

BW

D

BW

A

MEMORY

ARRAY

D Q s

       

SLEEP

CONTROL

ZZ

A

[1:0]

2

DQ

A

 

BYTE 

WRITE REGISTER

DQ

B

 

BYTE 

WRITE REGISTER

DQ

C

 

BYTE 

WRITE REGISTER

DQ

D

 

BYTE 

WRITE REGISTER

DQ

A

 

BYTE 

WRITE DRIVER

DQ

B

 

BYTE 

WRITE DRIVER

DQ

C

 

BYTE 

WRITE DRIVER

DQ

D

 

BYTE 

WRITE DRIVER

[+] Feedback 

Summary of Contents for CY7C1215H

Page 1: ...nous inputs include the Output Enable OE and the ZZ pin Addresses and chip enables are registered at rising edge of clock when either Address Strobe Processor ADSP or Address Strobe Controller ADSC ar...

Page 2: ...Q VDDQ DQA DQA NC NC DQC DQC VDDQ VSSQ DQC DQC DQC DQC VSSQ VDDQ DQC DQC NC VDD NC VSS DQD DQD VDDQ VSSQ DQD DQD DQD DQD VSSQ VDDQ DQD DQD NC A A CE 1 CE 2 BW D BW C BW B BW A CE 3 V DD V SS CLK GW BW...

Page 3: ...as input data pins OE is masked during the first clock of a Read cycle when emerging from a deselected state ADV Input Synchronous Advance Input signal sampled on the rising edge of CLK active LOW Wh...

Page 4: ...esented to the DQ inputs is written into the corre sponding address location in the memory array If GW is HIGH then the Write operation is controlled by BWE and BW A D signals The CY7C1215H provides B...

Page 5: ...ad Continue Read Next L H X X X H L H Tri State Read Continue Read Next L H X X X H L L DQ Read Suspend Read Current L X X X H H H H Tri State Read Suspend Read Current L X X X H H H L DQ Read Suspend...

Page 6: ...te Byte A DQA H L H H H L Write Byte B DQB H L H H L H Write Bytes B A H L H H L L Write Byte C DQC H L H L H H Write Bytes C A H L H L H L Write Bytes C B H L H L L H Write Bytes C B A H L H L L L Wr...

Page 7: ...ge 7 for 3 3V I O 2 0 VDD 0 3V V for 2 5V I O 1 7 VDD 0 3V V VIL Input LOW Voltage 7 for 3 3V I O 0 3 0 8 V for 2 5V I O 0 3 0 7 V IX Input Leakage Current except ZZ and MODE GND VI VDDQ 5 5 A Input C...

Page 8: ...llow standard test methods and procedures for measuring thermal impedance per EIA JESD51 30 32 C W JC Thermal Resistance Junction to Case 6 85 C W AC Test Loads and Waveforms Note 9 Tested initially a...

Page 9: ...se 0 5 0 5 ns tADH ADSP ADSC Hold after CLK Rise 0 5 0 5 ns tADVH ADV Hold after CLK Rise 0 5 0 5 ns tWEH GW BWE BW A D Hold after CLK Rise 0 5 0 5 ns tDH Data Input Hold after CLK Rise 0 5 0 5 ns tCE...

Page 10: ...CE3 is HIGH tCYC t CL CLK ADSP t ADH t ADS ADDRESS t CH OE ADSC CE tAH tAS A1 tCEH tCES GW BWE BW A D Data Out Q High Z tCLZ tDOH tCO ADV tOEHZ tCO Single READ BURST READ tOEV tOELZ tCHZ ADV suspends...

Page 11: ...ADS ADDRESS tCH OE ADSC CE tAH tAS A1 tCEH tCES BWE BW A D Data Out Q High Z ADV BURST READ BURST WRITE D A2 D A2 1 D A2 1 D A1 D A3 D A3 1 D A3 2 D A2 3 A2 A3 Data In D Extended BURST WRITE D A2 2 Si...

Page 12: ...e is performed 19 GW is HIGH Switching Waveforms continued tCYC tCL CLK ADSP tADH tADS ADDRESS tCH OE ADSC CE tAH tAS A2 tCEH tCES BWE BW A D Data Out Q High Z ADV Single WRITE D A3 A4 A5 A6 D A5 D A6...

Page 13: ...entering ZZ mode See Cycle Descriptions table for all possible signal conditions to deselect the device 21 DQs are in High Z when exiting ZZ sleep mode Switching Waveforms continued t ZZ I SUPPLY CLK...

Page 14: ...ed trademark of IBM Corporation All product and company names mentioned in this document may be trademarks of their respective holders Ordering Information Not all of the speed package and temperature...

Page 15: ...poration on Page 1 from 3901 North First Street to 198 Champion Court Added 2 5VI O option Changed Three State to Tri State Included Maximum Ratings for VDDQ relative to GND Modified Input Load to Inp...

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